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    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS
    1.
    发明申请
    CONTROLLED DEPOSITION OF PHOTOVOLTAIC THIN FILMS USING INTERFACIAL WETTING LAYERS 审中-公开
    使用界面湿润层控制光伏薄膜的沉积

    公开(公告)号：US20140076402A1

    公开(公告)日：2014-03-20

    申请号：US14026130

    申请日：2013-09-13

    申请人： Jason D. Myers ,  Jesse A. Frantz ,  Robel Y. Bekele ,  Jasbinder S. Sanghera ,  Ishwar D. Aggarwal

    发明人： Jason D. Myers ,  Jesse A. Frantz ,  Robel Y. Bekele ,  Jasbinder S. Sanghera ,  Ishwar D. Aggarwal

    IPC分类号： H01L31/032 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/18 ,  Y02E10/541

    摘要： A method for forming a photovoltaic device by depositing at least one wetting layer onto a substrate where the wetting layer is ≦100 nm and sputtering a photovoltaic material onto the wetting layer where the wetting layer interacts with the photovoltaic material. Also disclosed is the related photovoltaic device made by this method. The wetting layer may comprise any combination of In2Se3, CuSe2, Cu2Se, Ga2Se3, In2S3, CuS2, Cu2S, Ga2S3, CuInSe2, CuGaSe2, InxGa2-xSe3 where 0≦x≦2, CuInS2, CuGaS2, InxGa2-xS3 where 0≦x≦2, In2Se3-xSx where 0≦x≦3, CuSe2-xSx where 0≦x≦2, Cu2Se1-xSx, (0≦x≦1), Ga2Se3-xSx where 0≦x≦3, and InxGa2-xS3-ySy where 0≦x≦2, 0≦y≦3. The photovoltaic material may be a CIGS (copper indium gallium diselenide) material or a variation of a CIGS material where a CIGS component is replaced or supplemented with any combination of sulfur, tellurium, aluminum, and silver.

    摘要翻译： 一种通过将至少一个润湿层沉积到衬底上而形成光伏器件的方法，其中润湿层为100nm，并将光伏材料溅射到润湿层与光伏材料相互作用的润湿层上。 还公开了通过该方法制造的相关光伏器件。 润湿层可以包括In2Se3，CuSe2，Cu2Se，Ga2Se3，In2S3，CuS2，Cu2S，Ga2S3，CuInSe2，CuGaSe2，InxGa2-xSe3的任何组合，其中0和nlE; x和nlE; 2，CuInS2，CuGaS2，InxGa2-xS3，其中0和nlE; x和nlE; 2，In2Se3-xSx其中0＆nlE; x＆nlE; 3，CuSe2-xSx其中0和nlE; x和nlE; 2，Cu2Se1-xSx，（0＆nlE; x＆nlE; 1），Ga2Se3-xSx其中0和nlE; x和n1E; 3和InxGa2-xS3-ySy 其中0＆nlE; x＆nlE; 2，0＆nlE; y＆nlE; 3。 光电材料可以是CIGS（铜铟镓硒化物）材料或CIGS材料的变体，其中CIGS组分被硫，碲，铝和银的任何组合替代或补充。

    Wet-Etchable, Sacrificial Liftoff Layer Compatible with High Temperature Processing
    6.
    发明申请
    Wet-Etchable, Sacrificial Liftoff Layer Compatible with High Temperature Processing 有权
    耐腐蚀性，牺牲性，与高温加工兼容

    公开(公告)号：US20140263171A1

    公开(公告)日：2014-09-18

    申请号：US14201009

    申请日：2014-03-07

    申请人： Jesse A. Frantz ,  Jason D. Myers ,  Robel Y. Bekele ,  Jasbinder S. Sanghera

    发明人： Jesse A. Frantz ,  Jason D. Myers ,  Robel Y. Bekele ,  Jasbinder S. Sanghera

    IPC分类号： B44C1/22

    CPC分类号： B44C1/227 ,  H01L21/02002 ,  H01L31/03928 ,  H01L31/1896 ,  Y02E10/541

    摘要： A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.

    摘要翻译： 用于形成可耐蚀刻的牺牲剥离层或与高温处理兼容的层的方法，定义为由耐受高温的一种材料的单个膜或多个材料的多个膜组成的牺牲层的方法是 通过溅射或其他合适的技术（例如蒸发，脉冲激光沉积，湿化学等）沉积在基底上，称为原始基底。 中间步骤导致附接到剥离基底的剥离层，其允许将产物与原始基底分离。