利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

83 条记录 (耗时 0.024 秒)

    Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head
    41.
    发明授权
    Low fringe-field and narrow write-track magneto-resistive (MR) magnetic read-write head 失效
    低边缘场和窄写磁阻（MR）磁读写头

    公开(公告)号：US5719730A

    公开(公告)日：1998-02-17

    申请号：US682476

    申请日：1996-07-17

    申请人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

    发明人： Jei-Wei Chang ,  Kochan Ju ,  Yimin Guo ,  Xizeng Shi ,  Arthur Hungshin Tao

    IPC分类号： G11B5/012 ,  G11B5/187 ,  G11B5/265 ,  G11B5/31 ,  G11B5/39 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1871 ,  G11B5/2651 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/012

    摘要： A low fringe-field and narrow write-track magnetic read-write head. The low fringe-field and narrow write-track magnetic read-write head includes a first pole layer formed adjoining an insulator layer over a substrate. The first pole layer has a first air bearing surface which has a first edge adjoining and parallel with a first surface of the insulator layer. The low fringe-field and narrow write-track magnetic read-write head also includes a second pole layer separated from the first pole layer by the insulator layer. The second pole layer has a width no greater than about 20 microns and a width no greater than about 100 percent of the width of the first pole layer where the width of the second pole layer is contained within the width of the first pole layer. The second pole layer also has a second air bearing surface coplanar with the first air bearing surface. The second air bearing surface has a second edge adjoining and parallel with a second surface of the insulator layer parallel and opposite from the first surface of the insulator layer. Finally, there is removed at least one portion of at least one of: (1) the second air bearing surface including at least one outer portion of the second edge; and (2) the first air bearing surface including at least one portion of the first edge most closely adjoining but not opposite the second edge.

    摘要翻译： 低边缘场和窄写磁道磁读写头。 低条纹场和窄写磁道磁读写头包括邻近衬底上的绝缘体层形成的第一极层。 第一极层具有第一空气轴承表面，其具有与绝缘体层的第一表面相邻并平行的第一边缘。 低条纹场和窄写磁道磁读写头还包括通过绝缘体层与第一极层分离的第二极层。 第二极层的宽度不大于约20微米，宽度不大于第一极层的宽度的第一极层的宽度的大约百分之百，其中第二极层的宽度包含在第一极层的宽度内。 第二极层还具有与第一空气轴承表面共面的第二空气轴承表面。 第二空气轴承表面具有与绝缘体层的与绝缘体层的第一表面平行且相对的绝缘体层的第二表面相邻并平行的第二边缘。 最后，移除至少一部分至少一个：（1）第二空气支承表面包括第二边缘的至少一个外部部分; 和（2）所述第一空气轴承表面包括所述第一边缘的至少一部分最接近但不相对于所述第二边缘。

    Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
    44.
    发明申请
    Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing 有权
    具有堆叠存储单元的磁性随机存取存储器具有相反方向的硬轴偏置

    公开(公告)号：US20060202244A1

    公开(公告)日：2006-09-14

    申请号：US11075900

    申请日：2005-03-09

    申请人： Kochan Ju ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Jei-Wei Chang

    IPC分类号： H01L29/94

    CPC分类号： H01L27/226 ,  G11C11/16

    摘要： A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.

    摘要翻译： 磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储器堆栈具有沿Z轴堆叠的两个存储器单元，并且每个存储器单元具有相关联的偏置层。 每个偏置层通过沿其相关联的单元的自由层的硬磁化轴施加偏置场来减小其相关单元的切换场。 每个堆叠中的两个电池中的自由层具有平行彼此平行的平面内容易的磁化轴。 每个偏置层的面内磁化方向垂直于其相关电池中的自由层的易磁化轴（并且因此平行于硬轴）定向。 由两个偏压层产生的硬轴偏置磁场处于相反的方向。

    Method of manufacturing integrated spin valve head
    45.
    发明授权
    Method of manufacturing integrated spin valve head 失效
    集成自旋阀头的制造方法

    公开(公告)号：US07089650B2

    公开(公告)日：2006-08-15

    申请号：US11012000

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/83 ,  H04R31/00

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by a manufacturing method that includes inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过包括在自旋阀传感器的顶部或底部（或两个）侧面上插入高磁导率，高电阻率薄膜屏蔽的制造方法来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。

    Integrated spin valve head
    46.
    发明授权
    Integrated spin valve head 失效
    集成自旋阀头

    公开(公告)号：US06995959B2

    公开(公告)日：2006-02-07

    申请号：US11011957

    申请日：2004-12-14

    申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

    摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

    摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

    Lead plating method for GMR head manufacture
    47.
    发明授权
    Lead plating method for GMR head manufacture 失效
    GMR头制造的铅电镀方法

    公开(公告)号：US06973712B2

    公开(公告)日：2005-12-13

    申请号：US10093106

    申请日：2002-03-07

    申请人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    发明人： Chao-Peng Chen ,  Kevin Lin ,  Jei-Wei Chang ,  Kochan Ju ,  Hui-Chuan Wang

    IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  H04R31/00

    CPC分类号： B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052 ,  Y10T29/49128

    摘要： A major problem in Lead Overlay design for GMR structures is that the magnetic read track width is wider than the physical read track width. This is due to high interfacial resistance between the leads and the GMR layer which is an unavoidable side effect of prior art methods. The present invention uses electroplating preceded by a wet etch to fabricate the leads. This approach requires only a thin protection layer over the GMR layer to ensure that interface resistance is minimal. Using wet surface cleaning avoids sputtering defects and plating is compatible with this so the cleaned surface is preserved Only a single lithography step is needed to define the track since there is no re-deposition involved.

    摘要翻译： GMR结构的Lead Overlay设计中的一个主要问题是磁性读取磁道宽度比物理读取磁道宽度宽。 这是由于引线和GMR层之间的高界面电阻，这是现有技术方法的不可避免的副作用。 本发明使用在湿蚀刻之前的电镀来制造引线。 该方法仅需要在GMR层上的薄保护层，以确保接口电阻最小。 使用湿表面清洁可以避免溅射缺陷，电镀与此相容，因此清洁表面被保留只需要一个光刻步骤来定义轨道，因为没有重新沉积。

    Self-alignment scheme for enhancement of CPP-GMR
    48.
    发明申请
    Self-alignment scheme for enhancement of CPP-GMR 失效
    用于增强CPP-GMR的自对准方案

    公开(公告)号：US20050111143A1

    公开(公告)日：2005-05-26

    申请号：US10718372

    申请日：2003-11-20

    申请人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    发明人： Jei-Wei Chang ,  Chao-Peng Chen ,  Min Li ,  Kochan Ju

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/1278 ,  Y10T29/49052

    摘要： A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second self-aligned lift-off processes for patterning the capped ferromagnetic free layer and the conducting, non-magnetic spacer layer. The sensor so fabricated has reduced resistance and increased sensitivity.

    摘要翻译： 提供了一种用于制造合成自旋阀类型的电流垂直平面（CPP）巨磁阻（GMR）传感器的方法，该方法包括采用初级和次级电子吸收的电子束光刻工艺，第一和第二 用于对封装的铁磁自由层和导电的非磁性间隔层进行图案化的自对准剥离工艺。 所制造的传感器具有降低的电阻和增加的灵敏度。