公开(公告)号：US20120008134A1

公开(公告)日：2012-01-12

申请号：US12834379

申请日：2010-07-12

申请人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Jaione Tirapu Azpiroz ,  Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G01N21/00

CPC分类号： G03F1/36 ,  G03F7/70116 ,  G03F7/70125 ,  G03F7/70525

摘要： Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask.

摘要翻译： 使用曝光工具中的可编程照明器来增加刀具匹配的自由度。 提供了一种工具匹配方法，其利用基于用户特定约束的线性规划（LP）问题对各个源像素强度的精细调整，以最小化两种工具之间的平版印刷晶片数据的差异。 光刻数据可以是来自多个目标和多个工艺条件的关键尺寸差异。 该LP问题可以修改为包括使用多次扫描曝光来匹配源的二进制变量。 该方法可以应用于参考工具是物理工具或虚拟理想工具的场景。 此外，该方法可以匹配不同的光刻系统，每个包括工具和掩模。

公开(公告)号：US20100283982A1

公开(公告)日：2010-11-11

申请号：US12463742

申请日：2009-05-11

申请人： Saeed Bagheri ,  David O.S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Saeed Bagheri ,  David O.S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G03B27/54

CPC分类号： G03B27/54 ,  G03F1/34

摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.

摘要翻译： 用于等亮度优化的结构和方法。 该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点 选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示 从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。

公开(公告)号：US20100175042A1

公开(公告)日：2010-07-08

申请号：US12349104

申请日：2009-01-06

申请人： Jaione Tirapu Azpiroz ,  Alan E. Rosenbluth ,  Ioana Graur

发明人： Jaione Tirapu Azpiroz ,  Alan E. Rosenbluth ,  Ioana Graur

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/705

摘要： The present invention relates to the modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography. According to the invention, an isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask.

摘要翻译： 本发明涉及用于制造半导体集成电路的光掩模设计中使用的光刻工艺的建模，特别涉及由于照明光与掩模形貌的相互作用引起的复杂效应的建模。 根据本发明，通过确定对于照明的组分，具有有限厚度的特征边缘上的电场与薄掩模的相应特征边缘之间的差异来确定对掩模的薄掩模表示的异场扰动 表示。 从每个照明偏振的差的加权相干组合获得异场扰动。 通过将薄掩模表示与应用于掩模的每个边缘的异场扰动组合来表示具有形貌边缘的掩模的电场。

公开(公告)号：US20090185740A1

公开(公告)日：2009-07-23

申请号：US12015768

申请日：2008-01-17

申请人： Jaione Tirapu-Azpiroz ,  Kafai Lai ,  David O. S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

发明人： Jaione Tirapu-Azpiroz ,  Kafai Lai ,  David O. S. Melville ,  Alan E. Rosenbluth ,  Kehan Tian

IPC分类号： G06K9/00

CPC分类号： G03F7/705 ,  G03F1/36

摘要： A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask.

摘要翻译： 公开了一种用于计算集成电路处理中使用的掩模的图像强度的方法，系统，计算机程序产品和表查找系统。 方法可以包括：基于曼哈顿多边形沿着一个维度的平行边缘，将掩模的曼哈顿多边形分解为分解区域; 基于表查找确定每个分解区域的卷积; 基于分解区域的卷积确定曼哈顿多边形的相干系统贡献的总和; 并输出确定的用于分析掩模的相干系统贡献的总和。

公开(公告)号：US06563566B2

公开(公告)日：2003-05-13

申请号：US09771793

申请日：2001-01-29

申请人： Alan E. Rosenbluth ,  Scott Josef Bukofsky ,  Alfred K. K. Wong

发明人： Alan E. Rosenbluth ,  Scott Josef Bukofsky ,  Alfred K. K. Wong

IPC分类号： G03B2754

CPC分类号： G03F1/32 ,  G03F1/34 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/705

摘要： A system and method is described for lithographically printing patterns on a semiconductor using combinations of illumination and mask patterns which are optimized together to produce the desired pattern. The method of optimizing both illumination and mask pattern allows the development of mask patterns that are not constrained by the geometry of the desired pattern to be printed. Thus, the method provides high quality images even when the desired printed patterns have critical dimensions that approach the resolution limits of a lithographic system. The resulting mask patterns using the method do not obviously correspond to the desired patterns to be printed. Such masks may include phase-shifting technology that use destructive interference to define dark areas of the image and are not constrained to conform to the desired printed pattern.

公开(公告)号：US5159172A

公开(公告)日：1992-10-27

申请号：US564007

申请日：1990-08-07

申请人： Douglas S. Goodman ,  Alan E. Rosenbluth ,  Raymond E. Tibbetts ,  Janusz S. Wilczynski

发明人： Douglas S. Goodman ,  Alan E. Rosenbluth ,  Raymond E. Tibbetts ,  Janusz S. Wilczynski

IPC分类号： G02B17/00 ,  G02B17/02 ,  G02B17/08 ,  G02B19/00 ,  G02B27/18 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01S3/101

CPC分类号： G02B17/008 ,  G02B17/026 ,  G02B17/08 ,  G02B17/0856 ,  G02B17/0892 ,  G02B17/0896 ,  G02B19/0028 ,  G02B19/0047 ,  G02B19/0095 ,  G03F7/70225 ,  G03F7/70358

摘要： An optical system having a plurality of substantially planar reflecting surfaces and a plurality of curved reflecting surfaces providing an optical projection system which can scan a mask object onto an image plane by having the mask and copy substrate substantially fixed in position relative to each other and either simultaneously moving the mask and copy substrate in the same direction or maintaining the mask and image plane substantially stationary and fixed with respect to each other while scanning the optical system. The optical system uses one wavelength of an electromagnetic radiation to align the mask to the copy substrate and another wavelength of electromagnetic radiation to form the image of the mask on the copy substrate. The apparatus can be used as a laser ablation optical tool to laser ablate the image of a mask onto the copy substrate, as an inspection tool, as a photolithographic and for other related applications. The projection lens is a modified Dyson type lens.

公开(公告)号：US08537444B2

公开(公告)日：2013-09-17

申请号：US13618821

申请日：2012-09-14

申请人： Dario Gil ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

发明人： Dario Gil ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

IPC分类号： G03H1/08

CPC分类号： G03H1/02 ,  G03F7/70466 ,  G03H1/0244 ,  G03H1/0402 ,  G03H1/08 ,  G03H2001/0094 ,  G03H2001/2615 ,  G03H2222/47 ,  G03H2240/56

摘要： A system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. Designing lithographic masks further includes fabricating the hologram and projecting the illuminating wavefront. A simple personalization based on Talbot fringes and plasmonic interference is further performed.

摘要翻译： 一种系统和方法以及计算机程序产品，用于以比在相同波长下形成的普通图像物理地投射到薄膜上更精细的分辨率的图案来曝光光致抗蚀剂膜。 首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。 包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。 所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。 设计光刻掩模还包括制造全息图并投射照明波前。 进一步执行基于Talbot条纹和等离子体激元干扰的简单个性化。

公开(公告)号：US20120196210A1

公开(公告)日：2012-08-02

申请号：US13017593

申请日：2011-01-31

申请人： Tadanobu Inoue ,  Alan E. Rosenbluth ,  Kehan Tian ,  David O. Melville ,  Masaharu Sakamoto

发明人： Tadanobu Inoue ,  Alan E. Rosenbluth ,  Kehan Tian ,  David O. Melville ,  Masaharu Sakamoto

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/0069 ,  G03F1/30 ,  G03F1/36 ,  G03F1/38 ,  G03F1/70 ,  G06F19/00 ,  G21K5/00

摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.

摘要翻译： 确定用于制造半导体器件的实例的光刻掩模的可制造性。 从掩模的掩模布局数据中选择目标边对，用于确定制作掩模时的制造损失。 基于所选择的目标边缘对来确定掩模的可制造性，包括制造掩模时的制造损失，并且取决于制造掩模时的制造损失。 确定掩模的可制造性包括：对于具有至少基本上彼此平行的第一和第二边缘的所选边缘对，由于第一边缘的纵横比相对于第一边缘的宽度比， 第一边缘和第二边缘。 这种惩罚考虑到第一边缘的至少基本平行于第一边缘的一对连接的边缘。

公开(公告)号：US20120092633A1

公开(公告)日：2012-04-19

申请号：US13324092

申请日：2011-12-13

申请人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

发明人： Kafai Lai ,  Dirk Pfeiffer ,  Alan E. Rosenbluth

IPC分类号： G03B27/42

CPC分类号： G03F7/70216

摘要： A system for exposing a resist layer to an image that includes a layer reflective to imaging tool radiation and a resist layer having a region of photosensitivity over the reflective layer. An imaging tool projects radiation containing an aerial image onto the resist layer, with a portion of the radiation containing the aerial image passing through the resist and reflecting back to the resist to form an interference pattern of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, and to exclude lower contrast portions of the interference pattern in the resist thickness direction from said resist layer region of photosensitivity, to improve contrast of the aerial image in said resist layer region of photosensitivity.

摘要翻译： 一种用于将抗蚀剂层暴露于包括反射成像工具辐射的层的图像和在反射层上具有光敏区域的抗蚀剂层的系统。 成像工具将包含空间图像的辐射投射到抗蚀剂层上，其中包含空间图像的辐射的一部分穿过抗蚀剂并反射回抗蚀剂，以形成通过抗蚀剂层厚度的投影空间图像的干涉图案。 光敏层的抗蚀剂层区域的厚度和位置被选择为在干涉图形之中包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，并且排除抗蚀剂厚度方向上的干涉图案的较低对比度部分 从所述抗蚀剂层区域的光敏性，改善所述抗蚀剂层区域中的空间像的光敏性的对比度。

公开(公告)号：US20120077130A1

公开(公告)日：2012-03-29

申请号：US12890854

申请日：2010-09-27

申请人： Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

发明人： Saeed Bagheri ,  Kafai Lai ,  David O. Melville ,  Alan E. Rosenbluth ,  Kehan Tian ,  Jaione Tirapu Azpiroz

IPC分类号： G03F7/20 ,  G06F17/50

CPC分类号： G03F7/70466 ,  G03F1/70

摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.

摘要翻译： 解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。 简化是将完整的问题减少到无约束的公式。 将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。 可以为每个源获得简化问题的极值解。 然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。 最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。 该空间通常通过选择最高质量的极值解决方案降低维度。