公开(公告)号：US07138629B2

公开(公告)日：2006-11-21

申请号：US10754623

申请日：2004-01-12

申请人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

发明人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC分类号： G21K7/00 ,  G21N23/99 ,  H01J37/28 ,  G01N23/225

CPC分类号： H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

摘要翻译： 提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。 用于检查基板的表面的检查装置产生从电子束源25.1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。 当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。 产生电子束，使照度不均匀为10％以下。 由检测器25.11检测从样品W发射的电子。

公开(公告)号：US20070200569A1

公开(公告)日：2007-08-30

申请号：US11723591

申请日：2007-03-21

申请人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

发明人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

IPC分类号： G01R31/305

CPC分类号： G01R31/305

摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

公开(公告)号：US20050199807A1

公开(公告)日：2005-09-15

申请号：US11019111

申请日：2004-12-22

申请人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

发明人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

IPC分类号： G01N23/00 ,  G01R31/305 ,  G21K7/00

CPC分类号： G01R31/305

摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

摘要翻译： 提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。 该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。 通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域 电子束，以便提供缺陷区域的放大或详细观察。

公开(公告)号：US07352195B2

公开(公告)日：2008-04-01

申请号：US11723591

申请日：2007-03-21

申请人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

发明人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

IPC分类号： G01N23/00

CPC分类号： G01R31/305

摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

摘要翻译： 提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。 该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。 通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域 电子束，以便提供缺陷区域的放大或详细观察。

公开(公告)号：US07212017B2

公开(公告)日：2007-05-01

申请号：US11019111

申请日：2004-12-22

申请人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

发明人： Kenji Watanabe ,  Tohru Satake ,  Nobuharu Noji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Yuichiro Yamazaki ,  Ichirota Nagahama ,  Atsushi Onishi

IPC分类号： G01N23/00

CPC分类号： G01R31/305

摘要： Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus 1 comprising a primary optical system 10 serving for irradiating the electron beam onto the sample surface and a secondary optical system 30 serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

摘要翻译： 提供了通过使用同一电子束装置对样品进行详细观察的样本观察方法。 该方法使用电子束装置1，其包括用于将电子束照射到样品表面上的主要光学系统10和用于检测从所述样品表面发出的二次电子以形成样品表面的图像的二次光学系统30。 通过向样品表面照射电子束，在样品表面S上进行检查，并且在基于检查提取样品中的缺陷区域之后，再次施加提取的缺陷区域 电子束，以便提供缺陷区域的放大或详细观察。

公开(公告)号：US20060237646A1

公开(公告)日：2006-10-26

申请号：US10543151

申请日：2004-01-27

申请人： Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

发明人： Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

IPC分类号： G21K7/00

CPC分类号： H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

摘要： An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

公开(公告)号：US20050253066A1

公开(公告)日：2005-11-17

申请号：US10999124

申请日：2004-11-30

申请人： Kenji Watanabe ,  Tohru Satake ,  Mamoru Nakasuji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Nobuharu Noji ,  Keiichi Tohyama ,  Masahiro Hatakeyama

发明人： Kenji Watanabe ,  Tohru Satake ,  Mamoru Nakasuji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Nobuharu Noji ,  Keiichi Tohyama ,  Masahiro Hatakeyama

IPC分类号： G01N23/225 ,  H01J37/28

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J2237/24435

摘要： An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.

摘要翻译： 提供一种用于以高通量和高S / N比来评估样品的电子束装置。 当从电子枪发射的电子束通过静电透镜，物镜等照射到放置在X-Y-θ台上的样品时，从样品发射二次电子或反射电子。 通过控制偏转器，一次电子束入射角约为35°以上的入射角。 从样品发射的电子在垂直方向上被引导，并聚焦在检测器上。 检测器由MCP，荧光板，中继透镜和TDI（或CCD）组成。 来自TDI的电信号被提供给用于图像处理的个人计算机以产生样本的二维图像。

公开(公告)号：US07592586B2

公开(公告)日：2009-09-22

申请号：US10543151

申请日：2004-01-27

申请人： Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

发明人： Kenji Watanabe ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Yoshinao Hirabayashi ,  Tohru Satake ,  Nobuharu Noji ,  Yuichiro Yamazaki ,  Ichirota Nagahama

IPC分类号： H01J37/28

CPC分类号： H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

摘要： An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

摘要翻译： 提供了能够以高精度和可靠性以高产量检测样品上的图案的缺陷的装置，以及使用该缺陷的半导体制造方法。 电子束装置是用于通过用一次电子束照射样品来观察或评价样品的表面的映射投影型电子束装置，并在检测器上形成从样品发射的反射电子的图像。 作为检测反射电子的检测器，使用电子碰撞型CCD或电子碰撞型TDI等电子轰击型检测器。 从反射电子和从样品发射的二次电子之间的能量差选择性地检测反射电子。 为了通过照射一次电子束来消除样品表面上产生的电荷，样品的表面被放置在样品上方的盖子覆盖，并将气体供应到覆盖有覆盖物的样品上方。 气体与样品表面接触以减少样品表面的充电。

公开(公告)号：US07176459B2

公开(公告)日：2007-02-13

申请号：US10999124

申请日：2004-11-30

申请人： Kenji Watanabe ,  Tohru Satake ,  Mamoru Nakasuji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Nobuharu Noji ,  Keiichi Tohyama ,  Masahiro Hatakeyama

发明人： Kenji Watanabe ,  Tohru Satake ,  Mamoru Nakasuji ,  Takeshi Murakami ,  Tsutomu Karimata ,  Nobuharu Noji ,  Keiichi Tohyama ,  Masahiro Hatakeyama

IPC分类号： H01J37/28 ,  G01N23/225

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J2237/24435

摘要： An electron beam apparatus is provided for evaluating a sample at a high throughput and a high S/N ratio. As an electron beam emitted from an electron gun is irradiated to a sample placed on an X-Y-θ stage through an electrostatic lens, an objective lens and the like, secondary electrons or reflected electrons are emitted from the sample. The primary electron beam is incident at an incident angle set at approximately 35° or more by controlling a deflector. Electrons emitted from the sample is guided in the vertical direction, and focused on a detector. The detector is made up of an MCP, a fluorescent plate, a relay lens, and a TDI (or CCD). An electric signal from the TDI is supplied to a personal computer for image processing to generate a two-dimensional image of the sample.

摘要翻译： 提供一种用于以高通量和高S / N比来评估样品的电子束装置。 当从电子枪发射的电子束通过静电透镜，物镜等照射到放置在X-Y-θ台上的样品时，从样品发射二次电子或反射电子。 通过控制偏转器，一次电子束入射角约为35°以上的入射角。 从样品发射的电子在垂直方向上被引导，并聚焦在检测器上。 检测器由MCP，荧光板，中继透镜和TDI（或CCD）组成。 来自TDI的电信号被提供给用于图像处理的个人计算机以产生样本的二维图像。

公开(公告)号：US06909092B2

公开(公告)日：2005-06-21

申请号：US10437889

申请日：2003-05-15

申请人： Ichirota Nagahama ,  Yuichiro Yamazaki ,  Kenji Watanabe ,  Masahiro Hatakeyama ,  Tohru Satake ,  Nobuharu Noji

发明人： Ichirota Nagahama ,  Yuichiro Yamazaki ,  Kenji Watanabe ,  Masahiro Hatakeyama ,  Tohru Satake ,  Nobuharu Noji

IPC分类号： G01N23/225 ,  G01K1/08 ,  G01N23/00 ,  G01Q30/04 ,  G21K7/00 ,  H01J37/05 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J37/285 ,  H01J37/29 ,  H01L21/66

CPC分类号： H01J37/28 ,  H01J2237/0044 ,  H01J2237/2817

摘要： A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

摘要翻译： 提供了一种缺陷检查装置，用于产生较小失真的测试图像，以可靠地观察用于检测缺陷的样品表面。 缺陷检测装置包括用于照射样品的一次电子束源，用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜，用于检测二次电子的检测器，以及用于处理的图像处理单元 来自检测器的信号。 此外，可以提供第二电子源用于发射照射到样品的电子束，其中在用来自第一电子源的一次电子束照射之前，可以用来自第二电子源的电子束照射样品，用于观察 例子。 还提供了一种装置制造方法，用于使用缺陷检测装置以高吞吐量检查处理装置。