摘要:
An optical disc drive according to the present invention can read and/or write data from/on an optical disc with information layers including first and second information layers (L0 and L1). The drive includes: an objective lens for converging a light beam; a lens actuator for driving the lens; a photodetector section that receives the beam reflected from the disc and converts it into an electrical signal; and a control section for determining the values of a first group of parameters, which are set to read data from the first layer (L0), and those of a second group of parameters, which are set to read data from the second layer (L1), during a disc loading process. In performing the disc loading process, the control section determines the values of the first group of parameters, and then determines the values of the second group of parameters based on correlation information, representing correlation between the values of the first and second groups of parameters that were set during a previous disc loading process, and on the values of the first group of parameters that have been just determined during the current disc loading process.
摘要:
A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.
摘要:
There is provided a catalyst for a fuel cell, which simultaneously realizes excellent catalytic activity and catalytic stability. The catalyst for a fuel cell comprises a fine particle of a metal represented by formula: PtxRuySizT1u wherein T1 represents at least one element selected from the group consisting of nickel (Ni), tungsten (W), vanadium (V), and molybdenum (Mo); x=30 to 90 atomic %; y=0 to 50 atomic %; z=0.5 to 20 atomic %; and u=0.5 to 40 atomic %, or comprises a fine particle of a metal represented by formula: PtxRuySizT2u wherein T2 represents at least one element selected from the group consisting of hafnium (Hf), tin (Sn), zirconium (Zr), niobium (Nb), titanium (Ti), tantalum (Ta), chromium (Cr), and aluminum (Al); x=30 to 90 atomic %; y=0 to 50 atomic %; z=0.5 to 20 atomic %; and u=0.5 to 40 atomic %.
摘要翻译:提供了一种用于燃料电池的催化剂,其同时实现优异的催化活性和催化稳定性。 用于燃料电池的催化剂包括由式PtxRuySizT1u表示的金属微粒,其中T1表示选自镍(Ni),钨(W),钒(V)和钼(Mo)中的至少一种元素 ); x = 30〜90原子% y = 0〜50原子% z = 0.5〜20原子% 并且u = 0.5〜40原子%,或者包含由式PtxRuySizT2u表示的金属微粒,其中,T2表示选自铪(Hf),锡(Sn),锆(Zr), 铌(Nb),钛(Ti),钽(Ta),铬(Cr)和铝(Al); x = 30〜90原子% y = 0〜50原子% z = 0.5〜20原子% u = 0.5〜40原子%。
摘要:
A light emitting device, includes: a light source to emit source light; a first wavelength conversion portion to absorb the source light and to emit first light having a wavelength different from a wavelength of the source light; a light transmitting portion provided at an opposite side of the first wavelength conversion portion from the light source and configured to transmit the source light and the first light; and a second wavelength conversion portion provided at an opposite side of the light transmitting portion from the first wavelength conversion portion and configured to absorb at least one of the source light and the first light to emit second light having a wavelength different from the wavelength of the source light and also different from a wavelength of the first light. Part of the source light is configured to be taken to an outside of the light emitting device without passing through at least one of the first wavelength conversion portion and the second wavelength conversion portion.
摘要:
A grouting material which contains a fine particle material having a Blaine specific surface area of 5000 cm2/g or more, containing 30 to 60% by mass of cement clinker, 40 to 70 % by mass of and blast-furnace slag and 0.5 to 3 parts by mass of gypsum in terms of SO3 based on 100 parts by mass of the total amount of cement clinker and blast-furnace slag, and further contains (i) 4 to 8 parts by mass of calcium-aluminate-based rapid-hardening admixture, (ii) 0.05 to 0.2 parts by mass of setting retarder and (iii) 0.5 to 1.7 parts by mass of high-performance water-reducing agent, based on 100 parts by mass of the fine particle material.
摘要:
A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.
摘要:
A wireless transmitter and receiver increase a desired/unwanted (D/U) ratio of a correlation output without increasing the number of data in an ultra-wideband direct spread pulse communication system for transmitting and receiving two series of data through different spreading code streams. In the spreading codes used in matched filters of the wireless transmitter, (2*N−2)-th and (2*N)-th values of a cross-correlation signal between first and second spreading codes are greater than 0, (2*N−3)-th and (2*N+1)-th values of an auto-correlation signal of the first spreading code are less than 0, and (2*N−3)-th and (2*N+1)-th values of an auto-correlation signal of the second spreading code are less than 0. The peak value of the cross-correlation signal does not need to be small, and since a value other than the peak value does not become large, the D/U ratio can increase.
摘要:
A complex coefficient transversal filter using a SAW filter and a complex frequency converter using the complex coefficient transversal filter are provided, in which a first SAW filter receives a real signal as an input signal and generates a real component of a complex signal, and a second SAW filter receives the real signal as an input signal and generates an imaginary component of the complex signal. Accordingly, feed-through waves between the input and output stages can be cancelled, and a phase difference between real and imaginary signals can be maintained at 90° without a phase shift. In addition, when a low-IF frequency converter is implemented using the complex coefficient transversal filter, an image suppression characteristic is improved. When a zero-IF frequency converter is implemented using the complex coefficient transversal filter, an error vector magnitude (EVM) characteristic is improved.
摘要:
An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed “fluctuation” of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a first portion containing silicon oxide and a second portion arranged abreast of the first portion and having a higher heat conductance, and an electroconductive film including a gap therein, the electroconductive film arranged on the substrate, wherein the first and the second portions having a resistance higher than that of the electroconductive film, and the gap is arranged on the first portion.
摘要:
A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.