摘要:
The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.
摘要:
In a recording and reproducing apparatus for a disc-shaped recording medium, and a defect substitution method for a disc-shaped recording medium (8), whether reproduction of recorded data is good is determined by sector unit and not by product code unit, defective sector discrimination is performed by sector unit, and only sectors determined defective are alternately recorded, when using a recording format in which data that is error detection and correction coded with a product code is segmented and recorded to a plurality of sectors.
摘要:
Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.
摘要:
A method of detecting a defect includes of determining an image acquisition condition for irradiating a converged electron beam onto a specimen and detecting a secondary electron emanated from the specimen, acquiring an image by detecting the secondary electron emanated from the specimen in synchronism with the irradiation of the electron beam, processing the acquired image to detect a defect on the specimen, and outputting information regarding the detected defect. The image acquisition condition is determined based on plural images which are acquired by changing at least one of acceleration condition of the secondary electron and an electrical field in the vicinity of the specimen.
摘要:
Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.
摘要:
A multi-layered optical disk comprising a plurality of recording layers accumulated in the thickness direction wherein a light beam is focused on one of tracks of one of the layers thereby to record and reproduce data, the optical disk being characterized in that recording layers each have an identification section storing an address of the recording layer which the identification section belongs to.
摘要:
There are provided an automatic image collection apparatus and method capable of acquiring and automatically classifying fast an image of a defect part caused in a semiconductor wafer production process detected by a defect inspection unit. The image collection apparatus for automatically imaging and collecting images of a plurality of observed parts on a semiconductor wafer is provided with a scheduling portion for deciding the imaging order of the defects and stage moving velocities based on the positional relation of the plurality of observed parts on the wafer and a control portion for feed backing the stage movement amount to the beam deflection amount, thereby imaging and collecting images via an optimal route while moving the stage.
摘要:
A control adjustment method for adjusting a control of a recording/reproduction apparatus for a disc-shaped recording medium is provided, wherein the control is adjusted in response to an environmental change inside the recording/reproduction apparatus, such as a temperature change, the control adjustment method comprising the steps of: requesting an execution of the control adjustment; determining whether to inhibit or approve the execution of the control adjustment; and executing the control adjustment in the case where the execution of the control adjustment is approved in the step of determining the execution of adjustment.
摘要:
An inspection method and apparatus which controls an acceleration voltage of an electron beam, irradiates the electron beam to an object to be inspected mounted on a stage which is continuously moving at least in one direction, detects at least one of a secondary electron and a reflected electron emanated from the object by the irradiating, obtains an image of the object from the detected electron by using positional information of the stage, conducts inspection or measurement of the object using the image obtained, and outputs a result of the inspection or the measurement through a network system which is connected to a computer.
摘要:
An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the object from the detected electron. The method further includes the steps of controlling an electric field in a neighborhood of the object for filtering the at least one of the secondary and reflected electron emanated from the object so as to control the contrast of the image, detecting at least one of the secondary and reflected electron emanated from the object which passes through the electric field in the neighborhood of the object by the irradiation of the electron beam, and conducting inspection or measurement of the object on the basis of a detected signal of the detection in the controlled electric field.