Method for analyzing defect data and inspection apparatus and review system
    41.
    发明申请
    Method for analyzing defect data and inspection apparatus and review system 失效
    分析缺陷数据和检查仪器和审查系统的方法

    公开(公告)号:US20050168731A1

    公开(公告)日:2005-08-04

    申请号:US11095614

    申请日:2005-04-01

    摘要: The distribution states of defects are analyzed on the basis of the coordinates of defects detected by an inspection apparatus to classify them into a distribution feature category, or any one of repetitive defect, congestion defect, linear distribution defect, ring/lump distribution defect and random defect. In the manufacturing process for semiconductor substrates, defect distribution states are analyzed on the basis of defect data detected by an inspection apparatus, thereby specifying the cause of defect in apparatus or process.

    摘要翻译: 基于由检查装置检测到的缺陷坐标来分析缺陷的分布状态,将其分类为分布特征类别,或重复缺陷,拥塞缺陷,线性分布缺陷,环/块分布缺陷和随机 缺陷。 在半导体基板的制造工序中,基于由检查装置检测出的缺陷数据来分析缺陷分布状态,从而指定装置或处理中的缺陷的原因。

    Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data
    43.
    发明授权
    Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data 有权
    半导体器件的制造方法及其检测缺陷数据的处理方法及其装置

    公开(公告)号:US06841403B2

    公开(公告)日:2005-01-11

    申请号:US10348747

    申请日:2003-01-21

    IPC分类号: H01L21/00 H01L21/66 G06F19/00

    摘要: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

    摘要翻译: 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置,使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备,采取补救措施,以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性,分析评估的相似性的数据序列的循环性,评估从 根据制造线上每个制造设备的分析和处理方法,并推断或确定引起缺陷的因果过程和设备。

    Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data
    45.
    发明授权
    Method for manufacturing semiconductor devices and method and its apparatus for processing detected defect data 有权
    半导体器件的制造方法及其检测缺陷数据的处理方法及其装置

    公开(公告)号:US06797526B2

    公开(公告)日:2004-09-28

    申请号:US10232871

    申请日:2002-08-30

    IPC分类号: H01L2100

    摘要: Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

    摘要翻译: 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置,使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备,采取补救措施,以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性,分析评估的相似性的数据序列的循环性,评估从 根据制造线上每个制造设备的分析和处理方法,并推断或确定引起缺陷的因果过程和设备。

    Image classification method, observation method, and apparatus thereof with different stage moving velocities
    47.
    发明授权
    Image classification method, observation method, and apparatus thereof with different stage moving velocities 失效
    具有不同阶段移动速度的图像分类方法,观察方法及装置

    公开(公告)号:US06657221B2

    公开(公告)日:2003-12-02

    申请号:US09988436

    申请日:2001-11-20

    IPC分类号: G01N2186

    CPC分类号: G01N21/9501

    摘要: There are provided an automatic image collection apparatus and method capable of acquiring and automatically classifying fast an image of a defect part caused in a semiconductor wafer production process detected by a defect inspection unit. The image collection apparatus for automatically imaging and collecting images of a plurality of observed parts on a semiconductor wafer is provided with a scheduling portion for deciding the imaging order of the defects and stage moving velocities based on the positional relation of the plurality of observed parts on the wafer and a control portion for feed backing the stage movement amount to the beam deflection amount, thereby imaging and collecting images via an optimal route while moving the stage.

    摘要翻译: 提供一种自动图像采集装置和方法,其能够快速地获取由缺陷检查单元检测的半导体晶片制造过程中引起的缺陷部分的图像的自动分类。 用于在半导体晶片上自动成像和收集多个观察部分的图像的图像采集装置设置有调度部分,用于基于多个观察部分的位置关系来确定缺陷和阶段移动速度的成像顺序 晶片和用于馈送背景的控制部分,舞台移动量达到光束偏转量,从而在移动舞台的同时通过最佳路线对图像进行成像和收集。

    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same
    50.
    发明授权
    Electron beam inspection method and apparatus and semiconductor manufacturing method and its manufacturing line utilizing the same 有权
    电子束检查方法及装置及半导体制造方法及其制造线

    公开(公告)号:US06172365B2

    公开(公告)日:2001-01-09

    申请号:US09437313

    申请日:1999-11-10

    IPC分类号: H01J3728

    CPC分类号: H01J37/28 H01J2237/2817

    摘要: An electron beam inspection method including the steps of irradiating an electron beam to an object to be inspected, detecting at least one of a secondary electron and a reflected electron emanated from the object by the irradiation of the electron beam, and obtaining an image of the object from the detected electron. The method further includes the steps of controlling an electric field in a neighborhood of the object for filtering the at least one of the secondary and reflected electron emanated from the object so as to control the contrast of the image, detecting at least one of the secondary and reflected electron emanated from the object which passes through the electric field in the neighborhood of the object by the irradiation of the electron beam, and conducting inspection or measurement of the object on the basis of a detected signal of the detection in the controlled electric field.

    摘要翻译: 一种电子束检查方法,包括以下步骤:将电子束照射到待检查对象,通过电子束的照射检测从物体发射的二次电子和反射电子中的至少一种,并获得 物体来自被检测的电子。 该方法还包括以下步骤:控制物体附近的电场,以对从物体发出的次级和反射电子中的至少一种进行过滤,以便控制图像的对比度,检测二次 以及通过电子束的照射而在物体附近通过电场发射的反射电子,并且根据检测到的受控电场的检测信号进行物体的检查或测量 。