Abstract:
A projection exposure apparatus including a mask stage for supporting a mask, a wafer stage for supporting a wafer, and a projection optical system for projecting, on the wafer, an image of a circuit pattern of the mask, is disclosed. There are provided a surface position detecting system for detecting position of a surface of the water with respect to a direction of an optical axis of the projection optical system, an adjusting device for adjusting an interval between the wafer and the projection optical system, to position the wafer surface at a focus position of the projection optical system, and an outputting portion operable to direct a light beam to a reflection surface, provided at a predetermined site on the wafer stage, and to receive reflection light coming from the reflection surface through the projection optical system, the outputting portion producing a signal corresponding to a positional relationship between the reflection surface and the focus position of the projection optical system. A focus position detecting system detects the focus position of the projecting optical system, on the basis of the signal from the outputting portion, and a control system controls to the adjusting device on the basis of an output of the focus position detecting system and an output of the surface position detecting system.
Abstract:
An exposure system is disclosed which uses a pulsed laser, such as an excimer, as the light source for exposure. For exposure control, an acoustooptic element is used. More specifically, the acoustooptic element is used to modulate the intensity of a pulsed laser beam emitted from the excimer laser, to thereby allow precise control of the exposure with respect to a wafer having a resist coating.
Abstract:
A drawing apparatus for drawing on a substrate by a plurality of charged particle beams includes: an aperture array, a blanker array, a scanning mechanism, and a controller. The aperture array specifies the dimension of each of the plurality of charged particle beams on the substrate. The blanker array carries out blanking of the plurality of charged particle beams independently. The scanning mechanism performs a relative scanning between the plurality of charged particle beams and the substrate in each of the first direction and a second direction which cross each other. The controller controls the blanker array at a predetermined pitch on the substrate. The dimension and the pitch are smaller in one of the first direction and the second direction than in the other.
Abstract:
A constitution that conductive members respectively having micropatterns are arranged in high density is manufactured in high accuracy. A conductive film is formed on a substrate, a negative photosensitive resin is applied, the applied resin is exposed by using a first mask having plural fine-width apertures extending in Y direction, and the resin is then exposed and developed by using a second mask having plural apertures extending in X direction perpendicular to Y direction, thereby forming a first resist. After the conductive film is etched by using the first resist as a mask, a negative photosensitive resin is again applied, and exposure and development are performed as shifting the second mask in Y direction, thereby forming a second resist. The conductive film is etched by using the second resist as a mask to eliminate unnecessary areas, thereby forming the conductive film having minute-lines extending in Y direction.
Abstract:
A constitution that conductive members respectively having micropatterns are arranged in high density is manufactured in high accuracy. A conductive film is formed on a substrate, a negative photosensitive resin is applied, the applied resin is exposed by using a first mask having plural fine-width apertures extending in Y direction, and the resin is then exposed and developed by using a second mask having plural apertures extending in X direction perpendicular to Y direction, thereby forming a first resist. After the conductive film is etched by using the first resist as a mask, a negative photosensitive resin is again applied, and exposure and development are performed as shifting the second mask in Y direction, thereby forming a second resist. The conductive film is etched by using the second resist as a mask to eliminate unnecessary areas, thereby forming the conductive film having minute-lines extending in Y direction.
Abstract:
A mechanism for connecting first and second members through a sealing member sandwiched therebetween includes a position adjustment portion which adjusts a position of the first member in a direction substantially perpendicular to a surface of the second member with respect to the sealing member arranged on the second member, a reference portion which is provided to the second member and has a reference surface substantially perpendicular to the surface of the second member, and a pressing portion which presses the first member in a direction substantially parallel to the surface of the second member against the reference surface of the reference portion. A positioning member is provided to the first member and comes into contact with the reference surface of the reference portion, with the positioning member being position-adjustable with respect to a reference position of the first member. The first member, while being separated from the sealing member by the position adjustment portion, is positioned by the reference portion and pressing portion in the direction substantially parallel to the surface of the second member, and is thereafter moved by the position adjustment portion in the direction substantially perpendicular to the surface of the second member to deform the sealing member.
Abstract:
A charged particle beam exposure apparatus for writing a desired pattern on a substrate using a charged particle beam. The apparatus includes a blanking unit, having a deflector capable of deflecting the charged particle beam in at least two directions, configured to control beam passage to the substrate by deflecting the charged particle beam, and a setting unit configured to set a deflection direction of the charged particle beam by the deflector.
Abstract:
The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
Abstract:
A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.
Abstract:
A multi-charged-particle beam drawing apparatus and method that can correct a change in positional relationship, caused by the Coulomb effect, among charged particle beams are provided. The focal lengths of two electron lenses (21, 22) that form a condenser lens (2) are adjusted individually to change a relative positional relationship between the front focal position of the condenser lens (2) and an electron source (ES). Electron beams becoming incident on an aperture array (AA) can diverge, or be focused or collimated. Therefore, positions where intermediate images (img1-img3) are to be formed can be changed, and the change in positional relationship, caused by the Coulomb effect, among the charged particle beams can be corrected.