Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system
    41.
    发明授权
    Vertical-cavity surface-emitting laser, module, optical transmission device, optical transmission system, free space optical communication device, and free space optical communication system 有权
    垂直腔表面发射激光器,模块,光传输设备,光传输系统,自由空间光通信设备和自由空间光通信系统

    公开(公告)号:US07817703B2

    公开(公告)日:2010-10-19

    申请号:US12274439

    申请日:2008-11-20

    IPC分类号: H01S3/08

    摘要: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.

    摘要翻译: 提供一种VCSEL,其包括形成在基板上并具有第一杂质浓度的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 第二导电类型的第二半导体多层膜反射镜形成在有源区并且靠近有源区并且具有第二杂质浓度; 形成在其上并具有高于第二杂质浓度的第三杂质浓度的第二导电类型的第三半导体多层膜反射镜; 以及形成在其上并具有高于第二杂质浓度的第四杂质浓度的第二导电类型的第四半导体多层膜反射镜。 反射镜包括一对低Al半导体层和高Al半导体层。 第二反射镜中的低Al半导体层的Al组成高于第四反射镜。

    OPTICAL MODULE, OPTICAL TRANSMISSION DEVICE, AND SURFACE OPTICAL DEVICE
    42.
    发明申请
    OPTICAL MODULE, OPTICAL TRANSMISSION DEVICE, AND SURFACE OPTICAL DEVICE 有权
    光学模块,光学传输装置和表面光学装置

    公开(公告)号:US20100074573A1

    公开(公告)日:2010-03-25

    申请号:US12357741

    申请日:2009-01-22

    IPC分类号: G02B6/12

    CPC分类号: G02B6/423

    摘要: An optical module includes a mounted member, a surface optical device and a positioning portion. The mounted member includes an inserted portion. The surface optical device includes a substrate, an optical axis, and an insertion portion. The optical axis is provided in a direction perpendicular to the substrate. The insertion portion has a step surface that is inserted into the inserted portion of the mounted member in a direction perpendicular to the optical axis so as to position the optical axis. The positioning portion is provided in the mounted member and positions an optical transmission member so that the optical transmission member is optically coupled to the surface optical device.

    摘要翻译: 光学模块包括安装构件,表面光学装置和定位部分。 安装构件包括插入部分。 表面光学装置包括基板,光轴和插入部。 光轴沿与基板垂直的方向设置。 所述插入部具有台阶面,所述台阶面沿着与所述光轴垂直的方向插入所述安装部件的插入部,以使所述光轴定位。 定位部分设置在安装的构件中并定位光传输构件,使得光传输构件光学耦合到表面光学装置。

    VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM
    43.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, OPTICAL TRANSMISSION SYSTEM, FREE SPACE OPTICAL COMMUNICATION DEVICE, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM 有权
    垂直表面发射激光器,模块,光传输设备,光传输系统,自由空间光通信设备和自由空间光通信系统

    公开(公告)号:US20090201965A1

    公开(公告)日:2009-08-13

    申请号:US12274439

    申请日:2008-11-20

    IPC分类号: H01S5/183

    摘要: Provided is a VCSEL that includes a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate and having a first impurity concentration; an active region formed thereon; a second semiconductor multilayer film reflective mirror of a second conductivity type formed on and close to the active region and having a second impurity concentration; a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a third impurity concentration being higher than the second impurity concentration; and a fourth semiconductor multilayer film reflective mirror of the second conductivity type formed thereon and having a fourth impurity concentration being higher than the second impurity concentration. The reflective mirrors include a pair of a low-Al semiconductor layer and a high-Al semiconductor layer. The Al-composition of the low-Al semiconductor layer in the second reflective mirror is higher than that of the fourth mirror.

    摘要翻译: 提供一种VCSEL,其包括形成在基板上并具有第一杂质浓度的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 第二导电类型的第二半导体多层膜反射镜形成在有源区并且靠近有源区并且具有第二杂质浓度; 形成在其上并具有高于第二杂质浓度的第三杂质浓度的第二导电类型的第三半导体多层膜反射镜; 以及形成在其上并具有高于第二杂质浓度的第四杂质浓度的第二导电类型的第四半导体多层膜反射镜。 反射镜包括一对低Al半导体层和高Al半导体层。 第二反射镜中的低Al半导体层的Al组成高于第四反射镜。

    VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM
    44.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER, MODULE, OPTICAL TRANSMISSION DEVICE, FREE SPACE OPTICAL COMMUNICATION DEVICE, OPTICAL TRANSMISSION SYSTEM, AND FREE SPACE OPTICAL COMMUNICATION SYSTEM 有权
    垂直表面发射激光器,模块,光传输设备,自由空间光通信设备,光传输系统和自由空间光通信系统

    公开(公告)号:US20090201963A1

    公开(公告)日:2009-08-13

    申请号:US12330118

    申请日:2008-12-08

    IPC分类号: H01S5/183

    摘要: Provided is a VCSEL that includes: a first semiconductor multilayer film reflective mirror of a first conductivity type formed on a substrate; an active region formed thereon; a current confining layer of a second conductivity type formed thereon; a second semiconductor multilayer film reflective mirror of the second conductivity type formed thereon; and a third semiconductor multilayer film reflective mirror of the second conductivity type formed thereon. The reflective mirrors include a pair of a high refractive index layer and a low refractive index layer. The impurity concentration of the second reflective mirror is higher than that of the third reflective mirror. The band gap energy of the high refractive index layer in the second reflective mirror is greater than the energy of the wavelength of a resonator formed of the first reflective mirror, the active region, the current confining layer, the second reflective mirror, and the third reflective mirror.

    摘要翻译: 提供一种VCSEL,其包括:形成在基板上的第一导电类型的第一半导体多层膜反射镜; 形成在其上的有源区; 形成在其上的第二导电类型的电流限制层; 在其上形成第二导电类型的第二半导体多层膜反射镜; 以及形成在其上的第二导电类型的第三半导体多层膜反射镜。 反射镜包括一对高折射率层和低折射率层。 第二反射镜的杂质浓度高于第三反射镜的杂质浓度。 第二反射镜中的高折射率层的带隙能量大于由第一反射镜,有源区,电流限制层,第二反射镜和第三反射镜形成的谐振器的波长的能量 反光镜。

    Method and Apparatus for Processing Powder and Method of Manufacturing Porous Granulated Substance
    46.
    发明申请
    Method and Apparatus for Processing Powder and Method of Manufacturing Porous Granulated Substance 失效
    粉末加工方法及装置及多孔造粒物质的制造方法

    公开(公告)号:US20070228201A1

    公开(公告)日:2007-10-04

    申请号:US10561600

    申请日:2003-11-13

    IPC分类号: B02C19/18

    摘要: In order to manufacture the compound powder or the porous granulated substance in an efficient manner, a powder processing apparatus has an accumulating face on which the processing target powder is to be accumulated and a processing face disposed in opposition to the accumulating face and convexly curved, and a moving means for moving the accumulating face and the processing face along the accumulating face relative to each other. The apparatus comprises an excitement treatment means capable of applying an excitation energy to the processing target powder accumulated on the accumulating face from an excitation energy supplying portion disposed in opposition to the accumulating face or an oscillation means for oscillating the accumulating face or the processing face in a direction intersecting the accumulating face.

    摘要翻译: 为了有效地制造复合粉末或多孔粒状物质,粉末处理装置具有要积聚处理目标粉末的积聚面和与聚集面相对设置且凸起弯曲的处理面, 以及用于相对于彼此沿累积面移动累积面和处理面的移动装置。 该装置包括能够从与积聚面相对设置的激发能量供给部分积聚在积聚面上的处理目标粉末施加激发能的兴奋处理装置,或者使振动装置使振动积存面或处理面的振动装置 与积聚面相交的方向。

    Surface emitting semiconductor laser
    48.
    发明授权
    Surface emitting semiconductor laser 有权
    表面发射半导体激光器

    公开(公告)号:US06650683B2

    公开(公告)日:2003-11-18

    申请号:US10228217

    申请日:2002-08-27

    IPC分类号: H01S5183

    摘要: The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.

    摘要翻译: 本发明提供一种表面发射半导体激光器,包括:半导体衬底,其上依次层叠有下层多层反射镜,有源层区域和上层多层反射镜,其与下层多层反射镜一起贡献 形成一个空腔; 上电极,其设置在所述上​​多层反射镜的上层上,并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分,其设置在所述上​​电极和所述下多层反射镜之间,并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径,使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值,并且抑制高阶横向模式,并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。

    Surface emitting semiconductor laser
    50.
    发明授权
    Surface emitting semiconductor laser 有权
    表面发射半导体激光器

    公开(公告)号:US06529541B1

    公开(公告)日:2003-03-04

    申请号:US09714980

    申请日:2000-11-20

    IPC分类号: H01S5183

    摘要: A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.

    摘要翻译: 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底,其上依次层叠下n型DBR层,有源层区域,上p型DBR层,作为上层n型DBR层的上层的p侧电极, 型的DBR层,并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率,确定孔的金属孔直径(Wmetal)和电流限制部分的直径(Woxide),使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。