摘要:
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要:
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要:
Monolithic lattice-mismatched semiconductor heterostructures are fabricated by bonding patterned substrates with alternative active-area materials formed thereon to a rigid dielectric platform and then removing the highly-defective interface areas along with the underlying substrates to produce alternative active-area regions disposed over the insulator and substantially exhausted of misfit and threading dislocations.
摘要:
Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
摘要:
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step.
摘要:
A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.
摘要翻译:在半导体材料上沉积梯度Si 1-x Ge x层的过程中使颗粒产生最小化的方法包括在包括Si前体和Ge前体的气氛中提供衬底,其中Ge前体具有分解 温度大于锗烷,并沉积具有大于约0.15的最终Ge含量并且小于约0.3颗粒/ cm 2的颗粒密度的梯度Si 1-x Ge 2层在衬底上 。
摘要:
A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1−xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
摘要翻译:在半导体材料上沉积梯度Si1-xGex层期间最小化颗粒产生的方法包括在包括Si前体和Ge前体的气氛中提供衬底,其中Ge前体的分解温度大于锗烷,并沉积 分级的Si1-xGex层,其具有大于约0.15的最终Ge含量和小于约0.3颗粒/ cm 2的颗粒密度。
摘要:
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
摘要翻译:在半导体材料上沉积梯度的Si 1-x N x N x层的最小化颗粒产生的方法包括在包括Si前体和Ge的气氛中提供衬底 前体,其中所述Ge前体具有大于锗烷的分解温度,以及沉积具有大于约0.15的最终Ge含量的分级的Si 1-x N x Ge x层;以及 衬底上的颗粒密度小于约0.3颗粒/ cm 2。
摘要:
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
摘要翻译:在半导体材料上沉积梯度Si1-xGex层期间最小化颗粒产生的方法包括在包括Si前体和Ge前体的气氛中提供衬底,其中Ge前体的分解温度大于锗烷,并沉积 分级的Si1-xGex层,其具有大于约0.15的最终Ge含量和小于约0.3颗粒/ cm 2的颗粒密度。
摘要:
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.