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公开(公告)号：US07408214B2
公开(公告)日：2008-08-05
申请号：US10947909
申请日：2004-09-23
IPC分类号： H01L21/8242
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要翻译： DRAM槽电容器尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成。
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公开(公告)号：US06891209B2
公开(公告)日：2005-05-10
申请号：US10218007
申请日：2002-08-13
IPC分类号： H01L21/8242 , H01L29/94 , H01L27/148
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
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3.发明申请公开(公告)号：US20120302032A1
公开(公告)日：2012-11-29
申请号：US13568894
申请日：2012-08-07
IPC分类号： H01L21/02
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要翻译： DRAM槽电容器尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成。
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公开(公告)号：US20080265299A1
公开(公告)日：2008-10-30
申请号：US12167828
申请日：2008-07-03
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要翻译： 尤其是通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域形成的DRAM沟槽电容器。
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公开(公告)号：US08253181B2
公开(公告)日：2012-08-28
申请号：US12167828
申请日：2008-07-03
IPC分类号： H01L29/94
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要翻译： 尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成的DRAM沟槽电容器。
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公开(公告)号：US07410861B2
公开(公告)日：2008-08-12
申请号：US10966959
申请日：2004-10-15
IPC分类号： H01L21/00
CPC分类号： H01L27/10829 , H01L27/1087 , H01L27/10894 , H01L27/10897 , H01L28/40 , H01L29/1054 , H01L29/7849 , H01L29/945
摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
摘要翻译： DRAM槽电容器尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成。
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7.发明申请Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication 有权晶格不匹配的半导体结构具有减少的位错缺陷密度和相关的器件制造方法公开(公告)号：US20110049568A1
公开(公告)日：2011-03-03
申请号：US12845593
申请日：2010-07-28
申请人： Anthony J. Lochtefeld , Matthew T. Currie , Zhiyuan Cheng , James Fiorenza , Glyn Braithwaite , Thomas A. Langdo
发明人： Anthony J. Lochtefeld , Matthew T. Currie , Zhiyuan Cheng , James Fiorenza , Glyn Braithwaite , Thomas A. Langdo
IPC分类号： H01L29/06
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02538 , H01L21/02612 , H01L21/02639 , H01L21/02647 , H01L21/28255 , H01L21/28264 , H01L21/8258 , H01L27/0605 , H01L27/092 , H01L29/04 , H01L29/1054 , H01L29/16 , H01L29/20 , H01L29/66666 , H01L29/66795 , H01L29/778 , H01L29/78 , H01L29/7827 , H01L29/7835 , H01L29/7848 , H01L29/785 , H01L29/78687 , H01L31/028 , H01L31/0304 , H01L31/036 , H01L31/1808 , H01L33/20 , H01L33/30 , H01L33/34 , Y02E10/50
摘要： Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
摘要翻译： 具有有限区域的单片晶格失配的半导体异质结构的制造，其具有基本上耗尽穿透位错的上部，以及基于这种晶格失配的异质结构的半导体器件的制造。
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公开(公告)号：US07776697B2
公开(公告)日：2010-08-17
申请号：US11847721
申请日：2007-08-30
IPC分类号： H01L21/00
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
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公开(公告)号：US07504704B2
公开(公告)日：2009-03-17
申请号：US11130584
申请日：2005-05-17
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L29/66628 , H01L21/76224 , H01L21/823412 , H01L21/823807 , H01L21/823878 , H01L29/1054 , H01L29/6659 , H01L29/66636 , H01L29/7842 , H01L29/785
摘要： A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.
摘要翻译： 包括晶体管和沟槽结构的结构，沟槽结构仅在晶体管的沟道区域中仅引起应变的一部分。
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公开(公告)号：US07326599B2
公开(公告)日：2008-02-05
申请号：US11436281
申请日：2006-05-18
IPC分类号： H01L21/00
CPC分类号： H01L29/7842 , H01L21/28079 , H01L21/28097 , H01L21/823807 , H01L21/823814 , H01L21/823828 , H01L21/823842 , H01L29/1054 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/66583 , H01L29/78654 , Y10S438/938
摘要： In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step.
摘要翻译： 在形成电子器件时，半导体层是预掺杂的，并且在栅极定义之前执行掺杂剂分布退火。 或者，栅极由金属形成。 因此，随后形成的浅源和漏极不受栅极退火步骤的影响。
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