Camera assembly for a mobile communication device
    41.
    发明申请
    Camera assembly for a mobile communication device 有权
    用于移动通信设备的相机组件

    公开(公告)号:US20050013606A1

    公开(公告)日:2005-01-20

    申请号:US10826724

    申请日:2004-04-16

    CPC分类号: H04N7/142 H04N5/2259

    摘要: A camera assembly for a mobile communication device comprises a camera, and a first portion adapted to rotate the camera. The first portion comprises a housing, a gear motor mounted in the housing for generating a rotational force, and a decelerator adapted to decelerate the rotational force for the purpose of rotating the camera.

    摘要翻译: 用于移动通信设备的相机组件包括相机和适于旋转相机的第一部分。 第一部分包括壳体,安装在壳体中用于产生旋转力的齿轮马达,以及适于使旋转力减速以便旋转相机的减速器。

    Organic light emitting diode display and method for manufacturing the same
    44.
    发明授权
    Organic light emitting diode display and method for manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US09041047B2

    公开(公告)日:2015-05-26

    申请号:US13535283

    申请日:2012-06-27

    IPC分类号: H01L51/52

    摘要: An exemplary embodiment described technology relates generally to an organic light emitting diode (OLED) display and a manufacturing method thereof. The organic light emitting diode (OLED) display according to an exemplary embodiment includes: a substrate; an encapsulation member; an organic light emitting element between the substrate and the encapsulation member; a middle sealing member including one side disposed between the substrate and the encapsulation member and another side extended from the one side to be bent and enclosing an edge of the encapsulation member; a first sealant sealing and combining the one side of the middle sealing member and the substrate to each other; a second sealant sealing and combining the other side of the middle sealing member and the encapsulation member to each other; and a getter at the one side of the middle sealing member and the encapsulation member.

    摘要翻译: 所描述的技术的示例性实施方式一般涉及有机发光二极管(OLED)显示器及其制造方法。 根据示例性实施例的有机发光二极管(OLED)显示器包括:基板; 封装件; 在所述基板和所述密封部件之间的有机发光元件; 中间密封构件,其包括设置在所述基板和所述封装构件之间的一侧,以及从所述弯曲的一侧延伸并包围所述密封构件的边缘的另一侧; 将第一密封剂密封并将中间密封构件的一侧与基板相互结合; 将第二密封剂密封并将中间密封构件的另一侧与封装构件相互结合; 以及位于中间密封构件和密封构件一侧的吸气剂。

    Method and apparatus for detecting insertion of SIM card in a portable terminal
    45.
    发明授权
    Method and apparatus for detecting insertion of SIM card in a portable terminal 有权
    用于检测SIM卡在便携式终端中的插入的方法和装置

    公开(公告)号:US08954096B2

    公开(公告)日:2015-02-10

    申请号:US13240044

    申请日:2011-09-22

    IPC分类号: H04B1/38 G06K7/00

    CPC分类号: G06K7/0021 G06K7/0069

    摘要: A method and apparatus for detecting insertion of a Subscriber Identity Module (SIM) card in a portable terminal are provided, in which a SIM card is inserted into a SIM card connector, and a controller continuously supplies an operating voltage to a predetermined pin of the SIM card connector, determines whether a voltage level of the predetermined pin of the SIM card connector changes in a predetermined pattern, and determines that the SIM card has been inserted into the SIM card connector if the voltage level of the predetermined pin of the SIM card connector changes in the predetermined pattern.

    摘要翻译: 提供了一种用于检测在便携式终端中插入用户识别模块(SIM)卡的方法和装置,其中将SIM卡插入到SIM卡连接器中,并且控制器将工作电压连续地提供给 SIM卡连接器确定SIM卡连接器的预定引脚的电压电平是否以预定模式改变,并且如果SIM卡的预定引脚的电压电平被确定为SIM卡已插入到SIM卡连接器中 连接器以预定模式改变。

    Method for forming a buried dielectric layer underneath a semiconductor fin
    46.
    发明授权
    Method for forming a buried dielectric layer underneath a semiconductor fin 有权
    在半导体翅片下形成掩埋介质层的方法

    公开(公告)号:US08835278B2

    公开(公告)日:2014-09-16

    申请号:US13885884

    申请日:2011-11-16

    摘要: Disclosed are methods for forming a localized buried dielectric layer under a fin for use in a semiconductor device. In some embodiments, the method may include providing a substrate comprising a bulk semiconductor material and forming at least two trenches in the substrate, thereby forming at least one fin. The method further includes filling the trenches with an insulating material and partially removing the insulating material to form an insulating region at the bottom of each of the trenches. The method further includes depositing a liner at least on the sidewalls of the trenches, removing a layer from a top of each of the insulating regions to thereby form a window opening at the bottom region of the fin, and transforming the bulk semiconductor material of the bottom region of the fin via the window opening, thereby forming a localized buried dielectric layer in the bottom region of the fin.

    摘要翻译: 公开了在用于半导体器件的翅片下面形成局部埋置介质层的方法。 在一些实施例中,该方法可以包括提供包括体半导体材料并在衬底中形成至少两个沟槽的衬底,从而形成至少一个鳍。 该方法还包括用绝缘材料填充沟槽并且部分地去除绝缘材料以在每个沟槽的底部形成绝缘区域。 该方法还包括至少在沟槽的侧壁上沉积衬垫,从每个绝缘区域的顶部去除层,从而在鳍的底部区域形成窗口开口,并且将本体半导体材料 通过窗口打开翅片的底部区域,从而在翅片的底部区域中形成局部埋置的介质层。

    Method for Forming a Buried Dielectric Layer Underneath a Semiconductor Fin
    48.
    发明申请
    Method for Forming a Buried Dielectric Layer Underneath a Semiconductor Fin 有权
    在半导体翅片下形成掩埋电介质层的方法

    公开(公告)号:US20140065794A1

    公开(公告)日:2014-03-06

    申请号:US13885884

    申请日:2011-11-16

    IPC分类号: H01L21/762

    摘要: Disclosed are methods for forming a localized buried dielectric layer under a fin for use in a semiconductor device. In some embodiments, the method may include providing a substrate comprising a bulk semiconductor material and forming at least two trenches in the substrate, thereby forming at least one fin. The method further includes filling the trenches with an insulating material and partially removing the insulating material to form an insulating region at the bottom of each of the trenches. The method further includes depositing a liner at least on the sidewalls of the trenches, removing a layer from a top of each of the insulating regions to thereby form a window opening at the bottom region of the fin, and transforming the bulk semiconductor material of the bottom region of the fin via the window opening, thereby forming a localized buried dielectric layer in the bottom region of the fin.

    摘要翻译: 公开了在用于半导体器件的翅片下面形成局部埋置介质层的方法。 在一些实施例中,该方法可以包括提供包括体半导体材料并在衬底中形成至少两个沟槽的衬底,从而形成至少一个鳍。 该方法还包括用绝缘材料填充沟槽并且部分地去除绝缘材料以在每个沟槽的底部形成绝缘区域。 该方法还包括至少在沟槽的侧壁上沉积衬垫,从每个绝缘区域的顶部去除层,从而在鳍的底部区域形成窗口开口,并且将本体半导体材料 通过窗口打开翅片的底部区域,从而在翅片的底部区域中形成局部埋置的介质层。

    Nonvolatile memory device and method for fabricating the same
    50.
    发明授权
    Nonvolatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号:US08456909B2

    公开(公告)日:2013-06-04

    申请号:US13308972

    申请日:2011-12-01

    IPC分类号: G11C16/04

    摘要: Provided are a nonvolatile memory device and a method for fabricating the same, which can secure the structural stability of a three-dimensional nonvolatile memory device. The nonvolatile memory device includes one or more columnar channel plugs, a plurality of word lines and a plurality of dielectric layers stacked alternately to surround the columnar channel plug, a memory layer disposed between the word line and the columnar channel plug, a plurality of word line connection portions, each of the word line connection portions connecting ends of word lines of a common layer from among the plurality of word lines, and a plurality of word line extension portions extending from the word line connection portions.

    摘要翻译: 提供一种非易失性存储器件及其制造方法,其可以确保三维非易失性存储器件的结构稳定性。 非易失性存储装置包括一个或多个柱状通道插头,多个字线和多个电介质层,交替堆叠以包围柱状通道插头,设置在字线和柱状通道插头之间的存储层,多个字 每个字线连接部分从多个字线中连接公共层的字线的端部,以及从字线连接部分延伸的多个字线延伸部分。