公开(公告)号：US08216365B2

公开(公告)日：2012-07-10

申请号：US12073178

申请日：2008-02-29

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B25/18

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

公开(公告)号：US07708833B2

公开(公告)日：2010-05-04

申请号：US12073904

申请日：2008-03-11

申请人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Koji Hirata ,  Takayuki Sato ,  Seiji Nagai ,  Katsuhiro Imai ,  Makoto Iwai ,  Shuhei Higashihara ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B35/00

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/06 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

摘要翻译： 本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。 钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。 液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置 用于控制填充其内部空间的氩（Ar）气体的状态。 因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na） ，和管道。

公开(公告)号：US07052979B2

公开(公告)日：2006-05-30

申请号：US10467566

申请日：2002-02-12

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0066 ,  H01L33/007

摘要： When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.

摘要翻译： 当在包括大量投影部分的基底基板上生长由III族氮化物化合物制成的衬底层（期望的半导体晶体）时，可以在每个突出部分之间形成其中不沉积半导体晶体的空腔，尽管它取决于 条件如每个投影部分的尺寸，每个投影部分之间的间隔和晶体生长。 因此，当基板层的厚度与突出部分的高度相比足够大时，内应力或外应力变得更容易集中于投影部分。 结果，这种应力特别地作用于朝向投影部分的剪切应力。 当剪切应力变大时，突出部分破裂。 因此，利用剪切应力使得能够容易地分离基底和基底层。 形成空穴越大，应力越倾向于集中到突出部分，从而能够更牢固地分离基底基底和基底层。

公开(公告)号：US07011707B2

公开(公告)日：2006-03-14

申请号：US10473074

申请日：2002-03-27

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Yoshihiro Irokawa ,  Kenji Ito

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Yoshihiro Irokawa ,  Kenji Ito

IPC分类号： C30B25/22

CPC分类号： C23C16/0272 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/32

摘要： A reaction prevention layer is formed to prevent Si from reacting with a gallium nitride group semiconductor (semiconductor crystal A) which is deposited after the reaction prevention layer is formed. By forming a reaction prevention layer comprising a material whose melting point or thermal stability is higher than that of a gallium nitride group semiconductor, e.g., AlN, on a sacrifice layer, a reaction part is not formed in the semiconductor substrate deposited on the reaction prevention layer when the gallium nitride group semiconductor is grown by crystal growth for a long time. In short, owing to the effect that the reaction prevention layer prevents silicon (Si) from diffusing, the reaction part is generated only in the sacrifice layer and it is never formed at the upper portion of the reaction prevention layer even by growing the semiconductor crystal A at a high temperature for a long time.

摘要翻译： 形成反应防止层，以防止Si与形成反应防止层之后沉积的氮化镓基半导体（半导体晶体A）发生反应。 通过在牺牲层上形成包含熔点或热稳定性高于氮化镓基半导体（例如AlN）的材料的反应防止层，在沉积在反应预防的半导体衬底中不形成反应部分 通过长时间的晶体生长生长氮化镓族半导体时的层。 简而言之，由于防反射层防止硅（Si）扩散，反应部分仅在牺牲层中产生，并且即使通过生长半导体晶体也不会形成在反应防止层的上部 A在高温下长时间。

公开(公告)号：US6076820A

公开(公告)日：2000-06-20

申请号：US66903

申请日：1998-04-28

申请人： Seiji Nagai ,  Hiroaki Yoshida

发明人： Seiji Nagai ,  Hiroaki Yoshida

IPC分类号： B41J11/00 ,  B65H5/02 ,  F16D1/05 ,  F16D3/48 ,  G03G15/00 ,  B65H55/22 ,  F16D1/00

CPC分类号： B65H5/021 ,  G03G15/6558 ,  B65H2403/21 ,  B65H2403/70 ,  G03G2215/0119 ,  Y10T403/602

摘要： In a rotation transfer device, a paper feeding apparatus and an image forming apparatus, transfer projections are disposed on coupling members provided on the ends of a driving shaft and a driven shaft, so that the movement of one transfer projection in the peripheral direction can be constrained by the other transfer projection and a positioning member. Thus, rotation irregularity caused by reverse rotation torque applied by a function from the side of paper can be prevented.

摘要翻译： 在旋转传送装置中，送纸装置和图像形成装置，转印突起设置在设置在驱动轴和从动轴的端部上的联接构件上，使得一个转印突起沿周向的移动可以是 由另一转移突起和定位构件约束。 因此，能够防止由纸侧产生的由功能引起的反转扭矩引起的旋转不规则。

公开(公告)号：US5615001A

公开(公告)日：1997-03-25

申请号：US496401

申请日：1995-06-29

申请人： Masato Kawashima ,  Hideyuki Shimobuchi ,  Hiroyuki Okitsu ,  Masato Matsuzuki ,  Hiroaki Yoshida ,  Michihiro Fujii ,  Yukinari Okawa ,  Masaru Iida ,  Katsuyasu Ito ,  Yukihide Toda ,  Seiji Nagai

发明人： Masato Kawashima ,  Hideyuki Shimobuchi ,  Hiroyuki Okitsu ,  Masato Matsuzuki ,  Hiroaki Yoshida ,  Michihiro Fujii ,  Yukinari Okawa ,  Masaru Iida ,  Katsuyasu Ito ,  Yukihide Toda ,  Seiji Nagai

IPC分类号： G03G15/00 ,  G03G15/01 ,  G03G21/16

CPC分类号： G03G21/1676 ,  G03G15/0194 ,  G03G21/1623 ,  G03G2215/0119 ,  G03G2221/1684

摘要： A plurality of electrostatic recording units are arranged in series along a path for moving a recording sheet of paper, and charged toner images having different colors are formed on the sheet of paper travelled through the path. A paper feeder unit is arranged beneath a paper introduction side of the paper moving path. The sheet of paper carrying the toner image formed thereon is ejected from a paper ejection side of the paper moving path, and is sent to a fixer in which the toner image is fixed on the sheet of paper. The sheet of paper carrying the toner image fixed thereon is sent to a paper receiver tray positioned above the fixer.

摘要翻译： 多个静电记录单元沿着用于移动记录纸的路径串联布置，并且在通过路径行进的纸张上形成具有不同颜色的带电调色剂图像。 供纸单元布置在纸张移动路径的纸介质侧下方。 携带形成在其上的调色剂图像的纸张从纸张移动路径的纸排出侧排出，并被送到其中调色剂图像被固定在纸张上的定影剂。 将固定在其上的调色剂图像的纸张送到位于定影剂上方的收纸盘。

公开(公告)号：US5267350A

公开(公告)日：1993-11-30

申请号：US603998

申请日：1990-10-25

申请人： Kenji Matsubara ,  Seiji Nagai ,  Tohru Shonai ,  Akihiro Fuseda

发明人： Kenji Matsubara ,  Seiji Nagai ,  Tohru Shonai ,  Akihiro Fuseda

IPC分类号： G06F9/38 ,  G06F9/00 ,  G06F9/30 ,  G06F9/312

CPC分类号： G06F9/3814 ,  G06F9/3802

摘要： An instruction fetch control method is generally arranged so as to have a plurality of instruction buffers, issue an instruction read request to a memory when a part of the instruction buffers becomes in an empty state and store a fetched instruction in the instruction buffer in an empty state. A flag is provided for specifying another instruction buffer which becomes in an empty state after the instruction stored in the instruction buffer is transmitted to a decoder. The quantity of instructions to be stored in the instruction buffer is made variable in accordance with output of the flag latch, and the fetched instruction is stored in the instruction buffer in an empty state. This arrangement enables a plurality of instructions fetched upon an instruction read request to be stored in the empty instruction buffers, thereby reducing the number of read requests issued.

摘要翻译： 指令获取控制方法通常被布置为具有多个指令缓冲器，当指令缓冲器的一部分变为空状态时，向存储器发出指令读取请求，并将指令缓冲器中的取指令存储在空 州。 提供了一种标志，用于指定在存储在指令缓冲器中的指令被发送到解码器之后变为空状态的另一指令缓冲器。 存储在指令缓冲器中的指令量根据标志锁存器的输出而变化，并且取出的指令以空状态存储在指令缓冲器中。 这种布置使得可以在指令读取请求中取出的多个指令被存储在空指令缓冲器中，从而减少发出的读请求数。

公开(公告)号：US4421697A

公开(公告)日：1983-12-20

申请号：US375716

申请日：1982-05-07

申请人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

发明人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

IPC分类号： B22D41/02 ,  F27D1/16 ,  F27D3/00

CPC分类号： F27D1/1626 ,  F27D2003/0007 ,  F27D2003/0038

摘要： There is disclosed the distribution of an amorphous refractory in a case where a lining frame is positioned within a molten metal vessel preliminarily lined with a permanent lining refractory and the amorphous refractory is cast into the space between the permanent lining refractory and the lining frame thereby applying a lining to the inner surface of the vessel.A conical distributor is arranged above the lining frame and the amorphous refractory is continuously delivered from a rotary chute onto the distributor so as to describe a concentric path of moving falling points.

摘要翻译： 公开了在衬里框架位于预先排列有永久性衬里耐火材料的熔融金属容器内的情况下的非晶态耐火材料的分布，并且将非晶态耐火材料浇注到永久性衬里耐火材料和衬里框架之间的空间中，从而施加 衬里到容器的内表面。 锥形分配器布置在衬里框架的上方，非晶态耐火材料从旋转滑道连续地传送到分配器上，以便描述移动落点的同心路径。