公开(公告)号：US4421697A

公开(公告)日：1983-12-20

申请号：US375716

申请日：1982-05-07

申请人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

发明人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

IPC分类号： B22D41/02 ,  F27D1/16 ,  F27D3/00

CPC分类号： F27D1/1626 ,  F27D2003/0007 ,  F27D2003/0038

摘要： There is disclosed the distribution of an amorphous refractory in a case where a lining frame is positioned within a molten metal vessel preliminarily lined with a permanent lining refractory and the amorphous refractory is cast into the space between the permanent lining refractory and the lining frame thereby applying a lining to the inner surface of the vessel.A conical distributor is arranged above the lining frame and the amorphous refractory is continuously delivered from a rotary chute onto the distributor so as to describe a concentric path of moving falling points.

摘要翻译： 公开了在衬里框架位于预先排列有永久性衬里耐火材料的熔融金属容器内的情况下的非晶态耐火材料的分布，并且将非晶态耐火材料浇注到永久性衬里耐火材料和衬里框架之间的空间中，从而施加 衬里到容器的内表面。 锥形分配器布置在衬里框架的上方，非晶态耐火材料从旋转滑道连续地传送到分配器上，以便描述移动落点的同心路径。

公开(公告)号：US09263258B2

公开(公告)日：2016-02-16

申请号：US12320642

申请日：2009-01-30

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Yasuhide Yakushi ,  Koji Okuno ,  Koichi Goshonoo

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Yasuhide Yakushi ,  Koji Okuno ,  Koichi Goshonoo

IPC分类号： C30B25/04 ,  B32B19/04 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02609 ,  H01L21/02639

摘要： Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lsapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.

摘要翻译： 提供一种具有M面主面的III族氮化物系化合物半导体的制造方法。 该方法采用蓝色蓝宝石衬底，该蓝宝石衬底具有主表面，其相对于R平面围绕由R平面和与其垂直的A平面形成的交线Lsapph-AM倾斜30°。 暴露蓝宝石衬底的R平面表面，并且在衬底的主表面上形成二氧化硅掩模。 AlN缓冲层形成在暴露的R平面上。 在AlN缓冲层上形成GaN层。 在GaN生长的初始阶段，蓝宝石衬底的顶表面通过横向生长完全被GaN层覆盖。 生长GaN层使得该层的a轴垂直于蓝宝石衬底的暴露的R平面表面; 层的c轴平行于蓝宝石衬底的轴方向Lsapph-AM; 并且从其a轴倾斜30°的层的m轴垂直于蓝宝石衬底的主表面（从露出的R平面倾斜30°）。

公开(公告)号：US20150231579A1

公开(公告)日：2015-08-20

申请号：US14349493

申请日：2012-05-28

申请人： Masakazu Inoue ,  Seiji Nagai ,  Tomoharu Kawahara

发明人： Masakazu Inoue ,  Seiji Nagai ,  Tomoharu Kawahara

IPC分类号： B01F7/30 ,  B01F3/12 ,  B01F7/00

CPC分类号： B01F7/30 ,  A47J43/0711 ,  B01F3/1271 ,  B01F7/003 ,  B01F7/00991 ,  B01F7/161 ,  B01F7/32 ,  B01F2215/0036 ,  B01F2215/0422

摘要： A planetary mixer which is used for production steps of various products in chemistry, medical treatment, electronics, ceramics, medicines, foods, feed and the like, and in which flame-shaped stirring blades are allowed to perform planetary motion in a tank, by which solid/liquid type treatment materials are subjected to stirring, blending, mixing/kneading, kneading or the like and it is intended to prevent adhesion of materials to a vertical side portion of the flame-shaped stirring blades.The vertical side portion 22 of the frame-shaped stirring blades 20 is constituted to have a cross-sectional configuration which has two slope faces 25, 26 slanting toward an inner wall of the tank, an edge face 29 connecting outward front ends 28 of the slope faces, and an arcuate inner face 30 connecting inward front ends 27 of the slope faces. The inward front ends are located far apart from the inner wall of the tank and the outward front ends are located near the inner wall of the tank, in which the distance between the inward front ends is broad and the distance between the outward front ends is narrow. Since the inner face 30 of the vertical side portion is formed into an arcuate configuration, the materials can flow without backwater, and adhesion and fixing thereof can be prevented.

摘要翻译： 用于化学，医疗，电子，陶瓷，药品，食品，饲料等各种产品的生产步骤的行星式混合器，其中允许火焰状搅拌叶片在罐中进行行星运动，其中通过 混合/混炼，捏合等进行搅拌，混合，混炼，混炼等，这是为了防止材料与火焰状搅拌叶片的垂直侧部分的附着。 框状搅拌叶片20的垂直侧部22构成为具有朝向罐的内壁倾斜的两个倾斜面25,26的截面形状，连接外部前端28的边缘面29 以及连接斜面的内侧前端部27的弓形内面30。 内侧前端位于与罐内壁相距较远的位置，向外的前端位于水箱内壁附近，内侧前端之间的距离较宽，其前端之间的距离为 狭窄。 由于垂直侧部分的内表面30形成为弓形结构，所以材料可以流动而没有回水，并且可以防止其粘附和固定。

公开(公告)号：US06680957B1

公开(公告)日：2004-01-20

申请号：US09515493

申请日：2000-02-29

申请人： Masayoshi Koike ,  Shiro Yamasaki ,  Yuta Tezen ,  Seiji Nagai ,  Akira Kojima ,  Toshio Hiramatsu

发明人： Masayoshi Koike ,  Shiro Yamasaki ,  Yuta Tezen ,  Seiji Nagai ,  Akira Kojima ,  Toshio Hiramatsu

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/34333

摘要： A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10.

摘要翻译： 半导体激光器101包括蓝宝石衬底1，AlN缓冲层2，掺杂Si的GaN n层3，掺杂Si的Al 0.1 Ga 0.9 N n包层4，掺杂Si的GaN n引导层5， 具有多个量子阱（MQW）结构的有源层6，其中厚度约为35的GaN阻挡层62和约35厚度的Ga0.95In0.05N阱层61交替层叠，掺杂Mg的GaN p引导层 如图7所示，依次形成Mg掺杂的Al 0.1 Ga 0.9 N p包覆层8和Mg掺杂的GaN p接触层9。 与脊状谐振器部件A接触的脊状空穴注入部分B形成为具有与Ni电极10的宽度w相同的宽度。从Ni电极10传输的孔以高电流密度注入到有源层6中， 可以降低激光振荡的电流阈值。 也可以通过将p导向层7形成为具有与Ni电极10的宽度w相同的宽度来更有效地提高电流阈值。

公开(公告)号：US06284045B1

公开(公告)日：2001-09-04

申请号：US09355132

申请日：1999-07-23

申请人： Ryosuke Nakamura ,  Toshihiko Kaneshige ,  Seiji Nagai ,  Keizo Nishimura

发明人： Ryosuke Nakamura ,  Toshihiko Kaneshige ,  Seiji Nagai ,  Keizo Nishimura

IPC分类号： B05B1306

CPC分类号： B22D41/02

摘要： A monolithic refractory depositing system capable of improving working environment and working efficiency and of spraying a material in a uniform thickness is provided. The monolithic refractory depositing system is capable of carrying out both a spraying process and a casting process. The monolithic refractory depositing system comprises a carriage (4) placed on rails (2) laid near a molten metal container (ladle) (1) so as to travel along the rails (2), a truck (7) capable of moving in directions perpendicular to the moving directions of the carriage (4), a post (8) set up on the traverse truck (7), an elevating frame (10) mounted for vertical movement on the traverse truck (7), a material feed pipe (9) inserted in an upper part of the elevating frame (10) and a spray nozzle (27) (or a pouring pipe (39)) detachably connected to a lower end of the material feed pipe (9), and a bendable support means (20) capable of moving together with the elevating frame (10) and connected to a part of the material feed pipe (9) on an upper side of the elevating frame (10).

摘要翻译： 提供了能够改善工作环境和工作效率以及均匀厚度喷涂材料的整体耐火材料沉积系统。 整体耐火材料沉积系统能够进行喷涂工艺和铸造工艺。 整体耐火材料沉积系统包括一个放置在靠近熔融金属容器（钢包）（1））的轨道（2）上以沿轨道（2）行进的滑架（4），能够沿着方向移动的卡车 垂直于滑架（4）的移动方向，设置在横动叉车（7）上的立柱（8），安装在横动车（7）上垂直运动的升降架（10），料料供给管 9）插入升降架（10）的上部和可拆卸地连接到供料管（9）的下端的喷嘴（27）（或浇注管（39）），以及可弯曲的支撑装置 （20），其能够与所述升降框架（10）一起移动并且连接到所述升降框架（10）的上侧上的所述供料管道（9）的一部分。

公开(公告)号：US5953581A

公开(公告)日：1999-09-14

申请号：US840895

申请日：1997-04-17

申请人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike

发明人： Shiro Yamasaki ,  Seiji Nagai ,  Masayoshi Koike

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/10 ,  H01S5/323 ,  H01S5/343 ,  H01L21/66

CPC分类号： H01S5/32308 ,  H01S5/0203

摘要： As a method for manufacturing a laser diode using a group III nitride compound semiconductor, independent dry etching process for forming electrodes and mirror facets are adopted. A portion of an upper semiconductor layer is etched for forming a window. An electrode for a lower semiconductor layer is formed through the window. After electrodes are formed, then, etching is carried out for forming mirror facets of laser cavity. This method realizes high oscillation, because the method enhances parallel and vertical degrees of the mirror facets. Further, cleanness of the mirror facets are improved, because they are formed after the electrodes are formed. The method further lowers resistivity of lower semiconductor layer, because its thickness can be controlled easily without etching excessively. As a result, luminous efficiency is improved.

摘要翻译： 作为使用III族氮化物化合物半导体制造激光二极管的方法，采用用于形成电极和镜面的独立的干蚀刻工艺。 上部半导体层的一部分被蚀刻以形成窗口。 通过窗口形成下半导体层用电极。 在形成电极之后，进行蚀刻以形成激光腔的镜面。 该方法实现了高振荡，因为该方法增强了镜面的平行和垂直度。 此外，改善了镜面的清洁度，因为它们在形成电极之后形成。 该方法进一步降低下半导体层的电阻率，因为其厚度可以容易地控制，而不会过度蚀刻。 结果，发光效率提高。

公开(公告)号：US09346027B2

公开(公告)日：2016-05-24

申请号：US14349493

申请日：2012-05-28

申请人： Masakazu Inoue ,  Seiji Nagai ,  Tomoharu Kawahara

发明人： Masakazu Inoue ,  Seiji Nagai ,  Tomoharu Kawahara

IPC分类号： B01F7/00 ,  B01F7/30 ,  B01F3/12 ,  A47J43/07

CPC分类号： B01F7/30 ,  A47J43/0711 ,  B01F3/1271 ,  B01F7/003 ,  B01F7/00991 ,  B01F7/161 ,  B01F7/32 ,  B01F2215/0036 ,  B01F2215/0422

摘要： A planetary mixer has stirring blades that undergo planetary motion within a tank in close proximity to an inner wall of the tank for stirring solid/liquid type treatment materials received by the tank. Each of the stirring blades includes a vertical side portion having two slope faces slanting toward the inner wall of the tank, an edge face connecting outward front ends of the slope faces, and an inner face connecting inward front ends of the slope faces. The outward front ends are disposed closer to the tank inner wall than are the inward front ends, with a distance between the inward front ends being greater than a distance between the outward front ends. The inner face is formed in the shape of an arc having a center located at an intersection of a line interconnecting the inward front ends and centerline running through a center of the edge face.

摘要翻译： 行星式混合器具有搅拌叶片，该搅拌叶片在罐内靠近罐的内壁进行行星运动，用于搅拌由罐容纳的固/液型处理材料。 每个搅拌叶片包括具有朝向罐的内壁倾斜的两个倾斜面的垂直侧部分，连接斜面的外部前端的边缘面和连接斜面的内部前端的内表面。 向前的前端设置成比内侧前端更靠近罐内壁，内侧前端之间的距离大于前侧前端之间的距离。 内表面形成为具有中心的中心的中心的中心位置，该中心位于将内侧前端与穿过边缘面的中心延伸的中心线相互连接的线的交点处。

公开(公告)号：US20100247418A1

公开(公告)日：2010-09-30

申请号：US12662006

申请日：2010-03-26

申请人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Takayuki Sato ,  Seiji Nagai ,  Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： C01B21/06

CPC分类号： C30B9/12 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625

摘要： An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

摘要翻译： 本发明的目的是通过Na通量法有效地添加Ge生产GaN。 在坩埚中，放置晶种衬底，使得衬底的一端保留在支撑基底上，由此籽晶衬底相对于坩埚的底表面保持倾斜，并且将镓固体和锗固体放置在 晶种基板与坩埚底面之间的空间。 然后，将钠固体置于晶种衬底上。 通过使用这种布置，当GaN晶体通过Na通量法在籽晶衬底上生长时，锗在形成钠 - 锗合金之前溶解在熔融镓中。 因此，GaN晶体可以有效地掺杂Ge。

公开(公告)号：US20090294909A1

公开(公告)日：2009-12-03

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

摘要翻译： 本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。 本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。 在该方法中，将碳和锗溶解在熔体中，并将​​锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。 熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

公开(公告)号：US07141444B2

公开(公告)日：2006-11-28

申请号：US10221486

申请日：2001-03-12

申请人： Masayoshi Koike ,  Yuta Tezen ,  Hiroshi Yamashita ,  Seiji Nagai ,  Toshio Hiramatsu

发明人： Masayoshi Koike ,  Yuta Tezen ,  Hiroshi Yamashita ,  Seiji Nagai ,  Toshio Hiramatsu

IPC分类号： H01L21/00

CPC分类号： H01L21/0265 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02647

摘要： A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride compound semiconductor layer 31 is exposed at the bottom portion of the trench. Thus, a second Group III nitride compound layer 32 can be epitaxially grown, laterally, with a top surface of the mesa and a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth. Etching may be performed until a cavity portion is provided in the substrate. The layer serving as a nucleus of ELO may be doped with indium (In) having an atomic radius greater than that of gallium (Ga) serving as a predominant element. The first semiconductor layer may be a multi-component layer containing a plurality of numbers of repetitions of a unit of a buffer layer and a single-crystal layer.