公开(公告)号：US20130122637A1

公开(公告)日：2013-05-16

申请号：US13735787

申请日：2013-01-07

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Duli Mao ,  Keh-Chiang Ku

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H01L27/1464

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract translation: 具有密封环支撑件的背面照明成像传感器包括具有形成在外延层的前侧的成像阵列的外延层。 金属叠层耦合到外延层的前侧，其中金属堆叠包括形成在成像传感器的边缘区域中的密封环。 包括从外延层的背面延伸到密封环的金属焊盘以露出金属焊盘的开口。 密封环支撑件设置在金属垫上并且在开口内，以在结构上支撑密封环。

公开(公告)号：US20130083224A1

公开(公告)日：2013-04-04

申请号：US13686788

申请日：2012-11-27

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC: H04N9/04

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

Abstract: A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second group of the photo-sensors, and a plurality of filter stacks overlaying a third group of the photo-sensors. The first group generates first color signals of a first color channel and the second group generates second color signals of a second color channel. Each of the filter stacks includes a first stacked filter of the first color and a second stacked filter of the second color. A sensitivity of the filter stacks equals a product of sensitivities of the first and the second stacked filters and the filter stacks generate a third color channel.

Abstract translation: 彩色图像传感器包括像素阵列，其包括重叠用于获取彩色图像的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件，覆盖第二组光传感器的第二颜色的第二滤色器元件和覆盖第三组光电传感器的多个滤光片堆叠 光电传感器。 第一组产生第一颜色通道的第一颜色信号，第二组产生第二颜色通道的第二颜色信号。 每个过滤器堆叠包括第一颜色的第一堆叠过滤器和第二颜色的第二堆叠过滤器。 滤波器堆叠的灵敏度等于第一和第二堆叠滤波器的灵敏度的乘积，并且滤波器堆叠产生第三颜色通道。

公开(公告)号：US20130083223A1

公开(公告)日：2013-04-04

申请号：US13686776

申请日：2012-11-27

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Yin Qian ,  Duli Mao ,  Vincent Venezia

IPC: H04N9/04

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14643

Abstract: A color image sensor includes a pixel array including CFA overlaying an array of photo-sensors for acquiring color image data. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors and second color filter elements of a second color overlaying a second group of the photo-sensors. The first group of photo-sensors generate first color signals of a first color channel and the second group of photo-sensors generate second color signals of a second color channel. The color image sensor further includes a color signal combiner circuit (“CSCC”) coupled to receive the first and second color signals output from the pixel array. The CSCC includes a combiner coupled to combine the first and second colors signals to generate third color signals of a third color channel. An output port is coupled to the CSCC to output the color image data.

Abstract translation: 彩色图像传感器包括像素阵列，其包括覆盖用于获取彩色图像数据的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件和覆盖第二组光传感器的第二颜色的第二滤色器元件。 第一组光电传感器产生第一颜色通道的第一颜色信号，第二组光电传感器产生第二颜色通道的第二颜色信号。 彩色图像传感器还包括耦合以接收从像素阵列输出的第一和第二颜色信号的颜色信号组合器电路（CSCC）。 CSCC包括组合器，其被耦合以组合第一和第二颜色信号以产生第三颜色通道的第三颜色信号。 输出端口耦合到CSCC以输出彩色图像数据。

公开(公告)号：US20210391363A1

公开(公告)日：2021-12-16

申请号：US16901894

申请日：2020-06-15

Applicant: OmniVision Technologies, Inc.

Inventor： Chun-Yung Ai ,  Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia

IPC: H01L27/146 ,  G03B13/36

Abstract: A multi-pixel detector of an image sensor is described. The multi-pixel detector includes a first photodiode region disposed within a semiconductor substrate to form a first pixel, a second photodiode region disposed within the semiconductor substrate to form a second pixel adjacent to the first pixel, and a partial isolation structure extending from a first side of the semiconductor substrate towards a second side of the semiconductor substrate between the first photodiode region and the second photodiode region. A length of a lateral portion of the partial isolation structure between the first photodiode region and the second photodiode region is less than a lateral length of the first photodiode region.

公开(公告)号：US20210358993A1

公开(公告)日：2021-11-18

申请号：US16877077

申请日：2020-05-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355

Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

公开(公告)号：US10153310B2

公开(公告)日：2018-12-11

申请号：US15213082

申请日：2016-07-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Bowei Zhang ,  Vincent Venezia ,  Gang Chen ,  Dyson H. Tai ,  Duli Mao

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/107 ,  H01L27/146 ,  H01L31/02 ,  G01J1/44

Abstract: A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.

公开(公告)号：US20180151609A1

公开(公告)日：2018-05-31

申请号：US15362402

申请日：2016-11-28

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Vincent Venezia ,  Gang Chen ,  Chih-Wei Hsiung

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

公开(公告)号：US09966408B1

公开(公告)日：2018-05-08

申请号：US15791191

申请日：2017-10-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/265 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide layer disposed proximate to a seed area on a surface of the first semiconductor material. The method also includes depositing a second semiconductor material over the surface of the first semiconductor material, and annealing the first semiconductor material and second semiconductor material. A portion of the second semiconductor material is etched away to form part of a source follower transistor, and dopant is implanted into the second semiconductor material to form a first doped region, a third doped region, and a second doped region. The second doped region is laterally disposed between the first doped region and the third doped region, and the second doped region is a channel of the source follower transistor.

公开(公告)号：US20180097030A1

公开(公告)日：2018-04-05

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US09881964B1

公开(公告)日：2018-01-30

申请号：US15427748

申请日：2017-02-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L29/08 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material and a floating diffusion disposed proximate to the photodiode in the first semiconductor material. A source follower transistor is disposed in part in a second semiconductor material and includes: a first doped region, a third doped region, and a second doped region with an opposite polarity as the first doped region and the third doped region, and a gate electrode coupled to the floating diffusion and disposed in the first semiconductor material and aligned with the second doped region in the second semiconductor material of the source follower transistor.