公开(公告)号：US06721026B2

公开(公告)日：2004-04-13

申请号：US09846462

申请日：2001-05-01

Applicant: Jia-Shyong Cheng ,  Tean-Sen Jen

Inventor： Jia-Shyong Cheng ,  Tean-Sen Jen

IPC: G02F11333

CPC classification number: G02F1/134363

Abstract: A process for forming an in-plane switching mode liquid crystal display (IPS-LCD), which defines pixel portions of the common and data electrodes by the same photo-masking and lithography procedure, is disclosed. Accordingly, the misalignment can be avoid. An in-plane switching mode liquid crystal display (IPS-LCD) is also disclosed. The IPS-LCD includes a storage capacitor consisting of storage-capacitor portions of the common and data electrode structures, which is disposed outside the pixel region so as to enhance the aperture ratio of the pixel region.

Abstract translation: 公开了通过相同的光掩模和光刻工艺来形成公共和数据电极的像素部分来形成平面内切换模式液晶显示器（IPS-LCD）的工艺。 因此，可以避免不对准。 还公开了一种面内切换模式液晶显示器（IPS-LCD）。 IPS-LCD包括由公共数据电极结构的存储电容器部分组成的存储电容器，其设置在像素区域的外部，以增强像素区域的开口率。

公开(公告)号：US06642973B2

公开(公告)日：2003-11-04

申请号：US09935101

申请日：2001-08-22

Applicant: Jia-Shyong Cheng ,  Shing-Shiang Chang

Inventor： Jia-Shyong Cheng ,  Shing-Shiang Chang

IPC: G02F11368

CPC classification number: G02F1/136259 ,  G02F1/136209 ,  G02F2001/136263

Abstract: A repair structure for repairing data lines and scan lines comprised in a thin film transistor-liquid crystal display (TFT-LCD) is provided. The repair structure includes a first conducting repair structure formed simultaneously with a gate conducting structure of the thin film transistor-liquid crystal display, an insulating layer formed on the first conducting repair structure, and a second conducting repair structure formed on the insulating layer simultaneously with a data conducting structure of the thin film transistor-liquid crystal display and connected with the data conducting structure, wherein a plurality of overlap regions having the insulating layer between the fist conducting repair structure and the second conducting repair structure are formed, wherein when the data conducting structure positioned in the overlap regions is broken, the insulating layer in the overlap regions is destroyed to make electric connection between the first conducting repair structure and the second conducting repair structure.

公开(公告)号：US06403418B2

公开(公告)日：2002-06-11

申请号：US09551535

申请日：2000-04-18

Applicant: Shiou-Yu Wang ,  Jia-Shyong Cheng ,  Tean-Sen Jen ,  Ming-Teng Hsieh

Inventor： Shiou-Yu Wang ,  Jia-Shyong Cheng ,  Tean-Sen Jen ,  Ming-Teng Hsieh

IPC: H01L218242

CPC classification number: H01L28/91 ,  H01L21/3143 ,  H01L21/31604 ,  H01L27/10855

Abstract: A method of fabricating cup shape cylindrical capacitor of high density Dynamic Random Access Memory (DRAM) cells is disclosed. The cup shape capacitor shape is achieved by first depositing a first polysilicon layer on a silicon substrate; a third dielectric layer is then formed overlaying the first polysilicon layer, and defined third dielectric crowns by the conventional lithography and etching techniques; a second polysilicon layer is deposited overlaying the third dielectric crowns and first polysilicon layer; the first polysilicon and second polysilicon layers are then vertically anisotropically etchback to define storage nodes of the cylindrical capacitors; the third dielectric crowns are removed; finally, the capacitor dielectric layer and the polysilicon top plate of the capacitor are formed to complete the cup shape cylindrical capacitor formation for high density DRAM applications.

Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的杯形圆柱形电容器的方法。 杯状电容器形状通过首先在硅衬底上沉积第一多晶硅层来实现; 然后通过常规的光刻和蚀刻技术形成覆盖第一多晶硅层和限定的第三介电冠的第三介电层; 沉积覆盖第三介电冠和第一多晶硅层的第二多晶硅层; 然后第一多晶硅和第二多晶硅层垂直各向异性回蚀以限定圆柱形电容器的存储节点; 去除第三介质冠; 最后，电容器的电容器电介质层和多晶硅顶板形成为完成用于高密度DRAM应用的杯形圆柱形电容器形成。

公开(公告)号：US06387740B1

公开(公告)日：2002-05-14

申请号：US09627142

申请日：2000-07-24

Applicant: Tean-Sen Jen ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Jia-Shyong Cheng

IPC: H01L2100

CPC classification number: H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  H01L27/1214

Abstract: A simplified tri-layer process for forming a thin film transistor matrix for a liquid crystal display is disclosed. By using a backside exposure technique, the masking step for patterning an etch stopper layer can be omitted. After forming an active region including a gate electrode and a scan line on the front side of a substrate, and sequentially applying an etch stopper layer and a photoresist layer over the resulting structure, the backside exposure is performed by exposing from the back side of the substrate. A portion of photoresist is shielded by the active region from exposure so that an etch stopper structure having a shape similar to the shape of the active region is formed without any photo-masking and lithographic procedure. Therefore, the above self-aligned effect allows one masking step to be reduced so as to simplify the process.

Abstract translation: 公开了用于形成用于液晶显示器的薄膜晶体管矩阵的简化三层工艺。 通过使用背面曝光技术，可以省略用于图案化蚀刻停止层的掩模步骤。 在衬底的前侧形成包括栅电极和扫描线的有源区，并在所得结构上依次施加蚀刻停止层和光致抗蚀剂层，通过从背面曝光 基质。 一部分光致抗蚀剂被有源区域遮蔽而不被曝光，从而形成具有类似于有源区形状的蚀刻停止结构，而没有任何光掩模和光刻工艺。 因此，上述自对准效果允许减少一个掩模步骤，从而简化处理。

公开(公告)号：US06337173B2

公开(公告)日：2002-01-08

申请号：US09208452

申请日：1998-12-10

Applicant: Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

Inventor： Tean-Sen Jen ,  Shiou-Yu Wang ,  Jia-Shyong Cheng

IPC: G03F726

CPC classification number: H01L28/92 ,  H01L21/76213 ,  H01L27/10852

Abstract: A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.

Abstract translation: 一种在半导体衬底上制造电容器电极的方法包括以下步骤：在半导体衬底上形成导电层; 在所述导电层上形成光致抗蚀剂层; 通过干涉曝光步骤图案化光致抗蚀剂层; 并使用图案化的光致抗蚀剂层作为掩模图案化导电层，从而形成电容器电极。

公开(公告)号：US5923989A

公开(公告)日：1999-07-13

申请号：US81598

申请日：1998-05-20

Applicant: Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

Inventor： Shian-Jyh Lin ,  Tsu-An Lin ,  Wen-Chieh Chang ,  Shiou-Yu Wang ,  Tean-Sen Jen ,  Hui-Jen Yang ,  Jia-Shyong Cheng ,  Ming-Teng Hsieh

IPC: H01L21/02 ,  H01L21/8242

CPC classification number: H01L27/10852 ,  H01L28/84

Abstract: A method of fabricating a rugged capacitor structure of high density Dynamic Random Access Memory (DRAM) cells is disclosed. First, MOSFETs, wordlines and bitlines are formed on a semiconductor silicon substrate. Next, a dielectric layer and a doped polysilicon layer are sequentially deposited over the entire silicon substrate. The dielectric layer and doped polysilicon layer are then partially etched to open source contact windows. Then, a polysilicon layer is deposited overlaying the doped polysilicon layer and filling into the source contact windows. Next, the polysilicon layer and doped polysilicon layers are partially etched to define bottom electrodes of the capacitors. Next, tilt angle implantation is performed to implant impurities into top surface and four sidewalls of the polysilicon layer and doped polysilicon layer. Next, a rugged polysilicon layer is deposited overlaying the polysilicon, doped polysilicon and third dielectric layers. Next, the polysilicon layer is anisotropically etched by using the rugged polysilicon layer as an etching mask to transfer rugged surface profile from the rugged polysilicon layer to the polysilicon layer. Finally, an interelectrode dielectric layer and a third polysilicon layer as top electrodes of the capacitors are sequentially formed to complete the rugged capacitor for high density DRAM applications.

Abstract translation: 公开了一种制造高密度动态随机存取存储器（DRAM）单元的坚固电容器结构的方法。 首先，在半导体硅衬底上形成MOSFET，字线和位线。 接下来，在整个硅衬底上依次沉积介电层和掺杂多晶硅层。 然后将电介质层和掺杂多晶硅层部分地蚀刻到开源接触窗口。 然后，沉积覆盖掺杂多晶硅层并填充到源极接触窗口中的多晶硅层。 接下来，部分蚀刻多晶硅层和掺杂多晶硅层以限定电容器的底部电极。 接下来，进行倾斜角注入以将杂质植入多晶硅层的顶表面和四个侧壁以及掺杂多晶硅层。 接下来，沉积覆盖多晶硅，掺杂多晶硅和第三介电层的坚固的多晶硅层。 接下来，通过使用坚固的多晶硅层作为蚀刻掩模来将多晶硅层各向异性地蚀刻，以将粗糙的表面轮廓从坚固的多晶硅层转移到多晶硅层。 最后，依次形成作为电容器顶电极的电极间电介质层和第三多晶硅层，以完成用于高密度DRAM应用的坚固电容器。

公开(公告)号：US5721599A

公开(公告)日：1998-02-24

申请号：US586535

申请日：1996-01-16

Applicant: Jia-Shyong Cheng

Inventor： Jia-Shyong Cheng

IPC: G02F1/1335 ,  G02F1/1343

CPC classification number: G02F1/133512 ,  G02F1/134309 ,  G02F2001/133519

Abstract: The electric circuit of a Liquid Crystal Display normally includes a common electrode comprising a material such as indium-tin-oxide that has high resistivity and hence high series resistance. Said series resistance is significantly reduced by the design taught in the present invention wherein an electrically conductive black matrix is located so as to be in contact with the common electrode. Additionally, said design reduces the level of light reflected back in the direction of viewing, thereby improving the contrast level of the display.

Abstract translation: 液晶显示器的电路通常包括具有高电阻率和因此高串联电阻的诸如铟锡氧化物的材料的公共电极。 所述串联电阻通过本发明所述的设计显着减少，其中导电黑色矩阵被定位成与公共电极接触。 另外，所述设计减少了在观看方向上反射的光的水平，从而提高了显示器的对比度。

公开(公告)号：US08883248B2

公开(公告)日：2014-11-11

申请号：US13339681

申请日：2011-12-29

Applicant: Jia-Shyong Cheng ,  Hung-Yi Hung ,  Jeah-Sheng Wu

Inventor： Jia-Shyong Cheng ,  Hung-Yi Hung ,  Jeah-Sheng Wu

IPC: B29C65/00 ,  G06F3/041

CPC classification number: G06F3/041 ,  G06F2203/04103

Abstract: The present disclosure relates to a method for making a touch panel. The method includes following steps. A substrate is provided, wherein the substrate has a surface and defines two areas: a touch-view area and a trace area; applying an adhesive layer on the surface of the substrate. A carbon nanotube film is placed on a surface of the adhesive layer. The adhesive layer is solidified. An electrode and a conductive trace are formed on a surface of the carbon nanotube film so that part of the carbon nanotube film on the trace area is exposed from space between adjacent conductive lines of the conductive trace to form an exposed carbon nanotube film. The exposed carbon nanotube film is removed.

Abstract translation: 本公开涉及一种制造触摸面板的方法。 该方法包括以下步骤。 提供了一种衬底，其中衬底具有表面并且限定两个区域：触摸视区域和迹线区域; 在基材的表面上施加粘合剂层。 将碳纳米管膜放置在粘合剂层的表面上。 粘合层固化。 在碳纳米管膜的表面上形成电极和导电迹线，使得痕量区域上的碳纳米管膜的一部分从导电迹线的相邻导电线之间的空间露出，形成暴露的碳纳米管膜。 去除暴露的碳纳米管膜。

公开(公告)号：US08237680B2

公开(公告)日：2012-08-07

申请号：US12583162

申请日：2009-08-13

Applicant: Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

Inventor： Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

IPC: G06F3/041

CPC classification number: G06F3/045 ,  B82Y10/00 ,  B82Y20/00 ,  G02F1/1368 ,  H01L51/444 ,  Y10T428/269 ,  Y10T428/2913

Abstract: A touch panel includes a first electrode plate and a second electrode plate connected to the first electrode plated. The first electrode plate includes a first substrate, and a first conductive layer disposed on the first substrate. The second electrode includes a second substrate, and a second conductive layer disposed on the second substrate. The first or the second conductive layer includes at least one carbon nanotube composite layer.

Abstract translation: 触摸面板包括第一电极板和连接到镀覆的第一电极的第二电极板。 第一电极板包括第一基板和设置在第一基板上的第一导电层。 第二电极包括第二基板和设置在第二基板上的第二导电层。 第一或第二导电层包括至少一个碳纳米管复合层。

公开(公告)号：US20100007619A1

公开(公告)日：2010-01-14

申请号：US12459545

申请日：2009-07-02

Applicant: Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

Inventor： Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan ,  Ga-Lane Chen ,  Jia-Shyong Cheng ,  Jeah-Sheng Wu

IPC: G06F3/041

CPC classification number: G06F3/0414

Abstract: A liquid crystal display screen includes an upper board, a lower board opposite to the upper board, and a liquid crystal layer located between the upper board and the lower board. The upper board includes a touch panel. The touch panel includes an amount of transparent electrodes. At least one of the transparent electrodes includes a transparent carbon nanotube structure. The lower board includes a thin film transistor panel. The thin film transistor panel includes an amount of thin film transistors. Each of the thin film transistors includes a semiconducting layer. The semiconducting layer includes a semiconducting carbon nanotube structure.

Abstract translation: 液晶显示屏包括上板，与上板相对的下板，以及位于上板和下板之间的液晶层。 上板包括触摸面板。 触摸面板包括一定量的透明电极。 至少一个透明电极包括透明碳纳米管结构。 下板包括薄膜晶体管面板。 薄膜晶体管面板包括一定量的薄膜晶体管。 每个薄膜晶体管包括半导体层。 半导体层包括半导体碳纳米管结构。