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公开(公告)号：US20060124447A1
公开(公告)日：2006-06-15
申请号：US11350177
申请日：2006-02-07
申请人： Terry Holesinger , Quanxi Jia
发明人： Terry Holesinger , Quanxi Jia
IPC分类号： C23C14/00
CPC分类号： C23C14/28 , C23C14/087 , Y10S505/816
摘要： The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.
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公开(公告)号：US06933065B2
公开(公告)日：2005-08-23
申请号：US10387952
申请日：2003-09-25
CPC分类号： H01L39/2461 , C23C14/081 , C30B23/02 , C30B29/22 , C30B29/225 , Y10T428/265
摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.
摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，其中J×C为1.4×10 6 A / cm 2， 已经证明了在1cm宽的样品上的210安培的投影电流为2安培。
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公开(公告)号：US20050019616A1
公开(公告)日：2005-01-27
申请号：US10624855
申请日：2003-07-21
申请人： Stephen Foltyn , Quanxi Jia , Paul Arendt , Haiyan Wang
发明人： Stephen Foltyn , Quanxi Jia , Paul Arendt , Haiyan Wang
CPC分类号： H01L39/2461 , Y10S428/93
摘要： A composite structure including a base substrate and a layer of a mixture of strontium titanate and strontium ruthenate is provided. A superconducting article can include a composite structure including an outermost layer of magnesium oxide, a buffer layer of strontium titanate or a mixture of strontium titanate and strontium ruthenate and a top-layer of a superconducting material such as YBCO upon the buffer layer.
摘要翻译： 提供了包括基底和钛酸锶和钌酸锶的混合物层的复合结构。 超导制品可以包括包含氧化镁的最外层，钛酸锶的缓冲层或钛酸锶和钌酸锶的混合物的复合结构和在缓冲层上的诸如YBCO的超导材料的顶层。
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公开(公告)号：US06312819B1
公开(公告)日：2001-11-06
申请号：US09320398
申请日：1999-05-26
申请人： Quanxi Jia , Paul N. Arendt
发明人： Quanxi Jia , Paul N. Arendt
IPC分类号： B32B900
CPC分类号： H01L28/56 , H01L28/75 , Y10S117/902 , Y10S117/905 , Y10T428/26
摘要： A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.
摘要翻译： 提供一种薄膜结构，其包括在其表面上具有二氧化硅层的硅衬底和通过离子束辅助沉积沉积在二氧化硅层上的立方氧化物材料层，所述立方氧化物材料层 特征为双轴取向。 优选地，立方氧化物材料是氧化钇稳定的氧化锆。 另外的双轴取向氧化钌或氧化镧镧的薄层沉积在氧化钇稳定的氧化锆层上。 在氧化钇稳定的氧化锆层和氧化镧镧氧化钴层之间采用氧化铈中间层。 此外，一层钡锶钛氧化物可以在双轴取向的氧化钌层或氧化镧锶上。 此外，提供了一种形成这种薄膜结构的方法，包括在二氧化硅/硅衬底的二氧化硅表面上的双轴取向立方氧化物材料层的低温沉积。
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公开(公告)号：US5585776A
公开(公告)日：1996-12-17
申请号：US149445
申请日：1993-11-09
申请人： Wayne Anderson , Franklyn M. Collins , Quanxi Jia , Kaili Jiao , Hoong J. Lee
发明人： Wayne Anderson , Franklyn M. Collins , Quanxi Jia , Kaili Jiao , Hoong J. Lee
CPC分类号： H01C1/034 , H01C7/006 , Y10T29/49099
摘要： In a first embodiment of the invention a layer of ruthenium oxide is reactively deposited onto a substrate, then annealed for TCR adjustment and for stabilization. In a second, bi-layer embodiment of the invention, a layer of tantalum nitride is first reactively deposited onto a substrate, then annealed for stabilization. After a ruthenium oxide layer is reactively deposited onto the annealed tantalum nitride layer, the structure is annealed until a near-zero effective TCR for the bi-layer resistor is achieved. The ruthenium oxide capping layer serves as a barrier against chemical attack.
摘要翻译： 在本发明的第一实施方案中，将一层氧化钌反应地沉积在基材上，然后退火以进行TCR调整和稳定化。 在本发明的第二个双层实施例中，首先将一层氮化钽反应地沉积到衬底上，然后退火以进行稳定化。 在氧化钌层被反应地沉积到退火的氮化钽层上之后，将该结构退火直到达到双层电阻器的接近零的有效TCR。 氧化钌覆盖层用作防止化学侵蚀的屏障。
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公开(公告)号：US20130217840A1
公开(公告)日：2013-08-22
申请号：US12150627
申请日：2008-04-29
申请人： Thomas M. McCleskey , Anthony K. Burrell , Quanxi Jia , Yuan Lin
发明人： Thomas M. McCleskey , Anthony K. Burrell , Quanxi Jia , Yuan Lin
IPC分类号： C08G73/02
CPC分类号： C08G73/0206 , C08K3/10
摘要： A polymer assisted deposition process for deposition of metal oxide films is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures to yield metal oxide films. Such films can be epitaxial in structure and can be of optical quality. The process can be organic solvent-free.
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47.发明申请Control of Strain Through Thickness in Epitaxial Films Via Vertical Nanocomposite Heteroepitaxy 审中-公开通过垂直纳米复合材料异质外延控制外延薄膜中的厚度公开(公告)号：US20120058323A1
公开(公告)日：2012-03-08
申请号：US12671891
申请日：2008-08-01
申请人： Judith L. Driscoll , Quanxi Jia , Patrick Zerrer
发明人： Judith L. Driscoll , Quanxi Jia , Patrick Zerrer
IPC分类号： B32B15/00
摘要： A two-dimensional vertical heteroepitaxial strain controlled composite is grown. The strain-controlling phase can be benign in all other respects so that the functional properties of the parent phase are unchanged, improved/enhanced, and/or manipulated. The new composite is advantageous because there is no need for expensive specialized crystals and because there are no thickness limitations.
摘要翻译： 生长二维垂直异质外延应变控制复合材料。 应变控制阶段在所有其他方面可以是良性的，使得母体相的功能特性不变，改善/增强和/或操纵。 新的复合材料是有利的，因为不需要昂贵的专用晶体，因为没有厚度限制。
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公开(公告)号：US08034448B2
公开(公告)日：2011-10-11
申请号：US12229046
申请日：2008-08-19
IPC分类号： D02G3/00
CPC分类号： C08G77/26 , C08G77/16 , Y10S977/742 , Y10S977/748 , Y10S977/847 , Y10T428/2918 , Y10T428/2924
摘要： Fibrous composite comprising a plurality of carbon nanotubes; and a silica-containing moiety having one of the structures: (SiO)3Si—(CH2)n—NR1R2) or (SiO)3Si—(CH2)n—NCO; where n is from 1 to 6, and R1 and R2 are each independently H, CH3, or C2H5.
摘要翻译： 包含多个碳纳米管的纤维复合材料; 和（SiO）3 Si（（CH 2）n -NR 11 R 2）或（SiO）3 Si-（CH 2）n -NCO的结构之一的含二氧化硅的部分; 其中n为1至6，并且R 1和R 2各自独立地为H，CH 3或C 2 H 5。
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公开(公告)号：US20110189504A1
公开(公告)日：2011-08-04
申请号：US12697877
申请日：2010-02-01
CPC分类号： C23C18/1204 , C23C18/127 , C23C18/1279
摘要： A coating solution including a polymer and a metal selected from scandium, yttrium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, boron, aluminum and silicon can be deposited on a substrate and then exposed at elevated temperature to a reducing atmosphere including a gaseous carbon source. Solvent evaporates and the polymer decomposes and a metal carbide film forms on the substrate. Metal carbide films of titanium carbide, vanadium carbide, niobium carbide, tantalum carbide, tungsten carbide, silicon carbide, and several mixed carbides were prepared. X-Ray diffraction patterns of metal carbide films provide evidence of a highly ordered structure and excellent alignment with the substrate. A composite film of niobium carbide and carbon nanotubes was also prepared.
摘要翻译： 包括聚合物和选自钪，钇，钛，锆，铪，钒，铌，钽，铬，钼，钨，硼，铝和硅的金属的涂层溶液可以沉积在基材上，然后在高温下 包括气态碳源的还原气氛。 溶剂蒸发并且聚合物分解，并且在基材上形成金属碳化物膜。 制备碳化钛，碳化钒，碳化铌，碳化钽，碳化钨，碳化硅和几种混合碳化物的金属碳化物膜。 金属碳化物膜的X射线衍射图形提供了高度有序结构和与衬底的优异对准的证据。 还制备了碳化铌和碳纳米管的复合膜。
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公开(公告)号：US07959889B2
公开(公告)日：2011-06-14
申请号：US12221886
申请日：2008-08-06
IPC分类号： D01F9/12
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , Y10T428/24149 , Y10T428/2918
摘要： A carbon microtube comprising a hollow, substantially tubular structure having a porous wall, wherein the microtube has a diameter of from about 10 μm to about 150 μm, and a density of less than 20 mg/cm3. Also described is a carbon microtube, having a diameter of at least 10 μm and comprising a hollow, substantially tubular structure having a porous wall, wherein the porous wall comprises a plurality of voids, said voids substantially parallel to the length of the microtube, and defined by an inner surface, an outer surface, and a shared surface separating two adjacent voids.
摘要翻译： 一种碳微管，包括具有多孔壁的中空的基本管状结构，其中所述微管的直径为约10μm至约150μm，密度小于20mg / cm 3。 还描述了直径为至少10μm并且包括具有多孔壁的中空的基本管状结构的碳微管，其中多孔壁包括多个空隙，所述空隙基本上平行于微管的长度，并且 由内表面，外表面和分开两个相邻空隙的共享表面限定。
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