公开(公告)号：US20150092625A1

公开(公告)日：2015-04-02

申请号：US14555557

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/01 ,  H04L5/14 ,  H01P1/20

CPC classification number: H04L5/1461 ,  H01F17/0013 ,  H01P1/20 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/546 ,  H03H7/463

Abstract: RF communications circuitry includes a first RF filter structure, which is disclosed. The first RF filter structure includes a first passive group of RF resonators and active loss-reduction circuitry. The active loss-reduction circuitry is coupled to the first passive group of RF resonators. The active loss-reduction circuitry uses self-limiting positive feedback to reduce signal loss in the first passive group of RF resonators. Additionally, the active loss-reduction circuitry limits the self-limiting positive feedback to prevent self-oscillation in the active loss-reduction circuitry.

Abstract translation: RF通信电路包括公开的第一RF滤波器结构。 第一RF滤波器结构包括RF谐振器的第一无源组和有源损耗减小电路。 有源损耗减小电路耦合到RF谐振器的第一无源组。 有源损耗减小电路使用自限制正反馈来减少RF谐振器的第一无源组中的信号损耗。 此外，有源损耗降低电路限制了自限制正反馈，以防止有源损耗减小电路中的自振荡。

公开(公告)号：US20150084713A1

公开(公告)日：2015-03-26

申请号：US14555371

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03H7/01 ,  H04B3/04

CPC classification number: H03H7/0161 ,  H01F17/0013 ,  H03F1/56 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/429 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/463

Abstract: RF communications circuitry, which includes a first RF filter structure and RF detection circuitry, is disclosed. The first RF filter structure includes a first group of RF resonators, which include a first pair of weakly coupled RF resonators coupled to a signal path of a first RF signal. One of the first group of RF resonators provides a first sampled RF signal. The RF detection circuitry detects the first sampled RF signal to provide a first detected signal. The first RF filter structure adjusts a first filtering characteristic of the first RF filter structure based on the first detected signal.

Abstract translation: 公开了包括第一RF滤波器结构和RF检测电路的RF通信电路。 第一RF滤波器结构包括第一组RF谐振器，其包括耦合到第一RF信号的信号路径的第一对弱耦合RF谐振器。 第一组RF谐振器之一提供第一采样RF信号。 RF检测电路检测第一采样RF信号以提供第一检测信号。 第一RF滤波器结构基于第一检测信号调整第一RF滤波器结构的第一滤波特性。

公开(公告)号：US20150035617A1

公开(公告)日：2015-02-05

申请号：US14449913

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott ,  Nadim Khlat ,  Jayanti Jaganatha Rao

IPC: H03H7/46

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04

Abstract: RF communications circuitry, which includes a first tunable RF filter and a second tunable RF filter, is disclosed. The first tunable RF filter is coupled to the second tunable RF filter. The RF communications circuitry operates in one of a first operating mode and a second operating mode. During the first operating mode, the second tunable RF filter receives and filters an upstream RF signal to provide a filtered RF signal. Further, during the first operating mode, the first tunable RF filter augments a frequency response of the second tunable RF filter.

Abstract translation: 公开了包括第一可调谐RF滤波器和第二可调谐RF滤波器的RF通信电路。 第一可调谐RF滤波器耦合到第二可调谐RF滤波器。 RF通信电路以第一操作模式和第二操作模式中的一种操作。 在第一操作模式期间，第二可调谐RF滤波器接收并过滤上行RF信号以提供经滤波的RF信号。 此外，在第一操作模式期间，第一可调谐RF滤波器增加了第二可调谐RF滤波器的频率响应。

公开(公告)号：US20150035612A1

公开(公告)日：2015-02-05

申请号：US14449764

申请日：2014-08-01

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H04B3/04

CPC classification number: H03H7/0161 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/391 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H03J5/242

Abstract: Embodiments of radio frequency (RF) front-end circuitry are disclosed where the RF front-end circuitry includes a tunable RF filter structure and a calibration circuit. The tunable RF filter structure includes (at least) a pair of weakly coupled resonators and defines a transfer function with a passband. The calibration circuit is configured to shape the passband so that the passband defines a center frequency. Additionally, the calibration circuit is configured to detect a phase difference at the target center frequency between the pair of weakly coupled resonators and adjust the phase difference of the pair of weakly coupled resonators at the target center frequency so as to reduce a frequency displacement between the center frequency of the passband and the target center frequency. In this manner, the calibration circuit calibrates the tunable RF filter structure to correct for errors in the center frequency of the passband due to component manufacturing variations.

Abstract translation: 公开射频（RF）前端电路的实施例，其中RF前端电路包括可调RF滤波器结构和校准电路。 可调谐RF滤波器结构包括（至少）一对弱耦合谐振器并且定义具有通带的传递函数。 校准电路被配置成使通带成形，使得通带限定中心频率。 此外，校准电路被配置为检测在一对弱耦合谐振器之间的目标中心频率处的相位差，并且在目标中心频率处调整一对弱耦合谐振器的相位差，以便减小频率位移 通带的中心频率和目标中心频率。 以这种方式，校准电路校准可调谐RF滤波器结构，以校正由于部件制造变化而导致的通带中心频率的误差。

公开(公告)号：US20140361848A1

公开(公告)日：2014-12-11

申请号：US14298829

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/46

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF filter structures are disclosed that may have multiple filter paths, which are provided by weakly coupled resonators. The filter paths may be interconnected so that additional filter paths may be realized between input and output terminals of the RF filter structures. In this manner, the weakly coupled resonators from the filter paths may be arranged in a matrix. In one embodiment, an RF filter structure includes a first filter path and a second filter path. The first filter path includes (at least) a first pair of weakly coupled resonators while a second filter path that includes (at least) a second pair of weakly coupled resonators. To interconnect the first filter path and the second filter path, a cross-coupling capacitive structure is electrically connected between the first filter path and the second filter path. As such, an additional filtering path may be realized through the interconnection provided by the cross-coupling capacitive structure.

Abstract translation: 公开了可以具有由弱耦合谐振器提供的多个滤波器路径的RF滤波器结构。 滤波器路径可以互连，使得可以在RF滤波器结构的输入和输出端之间实现附加的滤波器路径。 以这种方式，来自滤波器路径的弱耦合谐振器可以被布置成矩阵。 在一个实施例中，RF滤波器结构包括第一滤波器路径和第二滤波器路径。 第一滤波器路径包括（至少）第一对弱耦合谐振器，而第二滤波器路径包括（至少）第二对弱耦合谐振器对。 为了互连第一滤波器路径和第二滤波器路径，交叉耦合电容结构电连接在第一滤波器路径和第二滤波器路径之间。 因此，可以通过由交叉耦合电容结构提供的互连来实现附加的滤波路径。

公开(公告)号：US10224891B2

公开(公告)日：2019-03-05

申请号：US14568495

申请日：2014-12-12

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H04B1/04 ,  H03G3/30 ,  H03F1/26 ,  H03F1/32 ,  H03F3/193

Abstract: RF PA circuitry includes an RF signal path, an adjustable component, a distortion compensation feedback loop including distortion compensation circuitry, RF noise filtering circuitry, and baseband noise filtering circuitry. The adjustable component is located in the RF signal path. The distortion compensation feedback loop is coupled in parallel with at least a portion of the RF signal path, and includes the distortion compensation circuitry. Further, the distortion compensation circuitry is configured to adjust one or more parameters of the adjustable component via a component adjustment signal based on a measurement of a signal at an output of the RF signal path. The RF noise filtering circuitry is coupled in the RF signal path and configured to attenuate noise therein. The baseband noise filtering circuitry is coupled between the distortion compensation circuitry and the adjustable component and configured to attenuate noise in the component adjustment signal.

公开(公告)号：US10062629B2

公开(公告)日：2018-08-28

申请号：US14931720

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Marcus Granger-Jones ,  Baker Scott

IPC: H03H7/38 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/29 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: Antenna aperture tuning circuitry includes a first signal path and a second signal path coupled in parallel between an antenna radiating element and ground. A first LC resonator and a second LC resonator are each coupled between the first signal path and ground. The first LC resonator and the second LC resonator are electromagnetically coupled such that a coupling factor between the first LC resonator and the second LC resonator is between about 1.0% and 40.0%. A third LC resonator and a fourth LC resonator are each coupled between the second signal path and ground. The third LC resonator and the fourth LC resonator are electromagnetically coupled such that a coupling factor between the third LC resonator and the fourth LC resonator is between about 1.0% and 40.0%.

公开(公告)号：US10028390B2

公开(公告)日：2018-07-17

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US10008431B2

公开(公告)日：2018-06-26

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09942991B2

公开(公告)日：2018-04-10

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.