摘要:
A fluid delivery apparatus and method for use in a chemical mechanical polishing system is provided. The delivery rate of a fluid onto a pad is controlled to reduce the consumption of the fluid. In general, the fluid flow may be varied between a relatively lower flow rate and a relatively higher flow rate or, alternatively, the flow may be periodically terminated. Fluid flow may be controlled by any combination of pumps, controllers, valves, or other regulator/fluid flow control member.
摘要:
Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.
摘要:
A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more surfactants, one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including a polar solvent.
摘要:
Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.
摘要:
A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e.g., peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e.g., urea peroxy acid.
摘要:
A method for polishing a metal layer (20) containing a combination of wide features (12), low density features (14), and high density features (18), is illustrated. A hydrophilic polish pad (24) having a shore D hardness of greater than 50 is used along with slurry (22) containing silica and an acidic based oxidizer such as oxadic acid in a chemical mechanical polishing (CMP) process. The result is less than 5:1 and preferably 1:1. This low selectivity results in the metal layer (20) being polished to a level below the surface of the surrounding oxide in a timed-controlled polish.
摘要:
A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
摘要:
A polishing system (10) is used to polish a semiconductor wafer (16) in accordance with the present invention. Polishing system (10) includes a wafer carrier (14) which includes a modulation unit (20). Modulation unit (20) includes a plurality of capacitors made up of a flexible lower plate (22) and a plurality of smaller upper plate segments (24). A controller (40) monitors the capacitance between each smaller upper plate segment (24) and lower plate (22), and compares the measured capacitance against a predefined set capacitance. To the extent the measured capacitance and predefined capacitance are different, controller (40) adjusts the voltage being applied to the respective upper plate segment (24) so that the measured capacitance and predefined capacitance are aligned. Thus, the present invention is able to achieve dynamic and localized control of the shape of the wafer as it is being polished.
摘要:
A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a dispenser to supply a polishing liquid to the polishing surface, and a temperature control system including a body configured to contact the polishing surface or the polishing liquid on the polishing surface. The body supports a thermal control module positioned over the polishing pad.
摘要:
A polishing pad conditioning apparatus includes a laser beam generating unit for providing a laser beam, a fluid delivery system for providing a fluid stream and a vacuum line for removing debris. The laser beam may directly impinge on a surface of a polishing pad thereby creating cutting action, while an atomized fluid stream provides cooling and pad debris along with fluid are removed thru the vacuum line. Alternatively, the laser beam may be combined with the atomized fluid stream in a region above the pad surface to substantially impart part of its energy to the fluid stream, generating high energy droplets which provide “cool” cutting action on the pad surface.