公开(公告)号：US20060099271A1

公开(公告)日：2006-05-11

申请号：US11312371

申请日：2005-12-21

Applicant: Michael Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

Inventor： Michael Rickey ,  J. Michael Ramstack ,  Rajesh Kumar

IPC: A61K9/14 ,  B29C39/10

CPC classification number: A61K38/09 ,  A61K9/1641 ,  A61K9/1647 ,  A61K9/1682 ,  A61K9/1694 ,  A61K9/5089 ,  A61K31/519 ,  B01J8/025 ,  B01J13/08 ,  B01J13/12 ,  B01J13/206 ,  B01J14/00 ,  B01J19/121 ,  B01J19/122 ,  B01J19/2415 ,  B01J2219/0877

Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.

公开(公告)号：US20060094857A1

公开(公告)日：2006-05-04

申请号：US11252819

申请日：2005-10-18

Applicant: Rajesh Kumar ,  Arthur Watterson ,  Virinder Parmar ,  Jayant Kumar ,  Lynne Samuelson

Inventor： Rajesh Kumar ,  Arthur Watterson ,  Virinder Parmar ,  Jayant Kumar ,  Lynne Samuelson

IPC: C08L61/00 ,  C09K15/04 ,  C09K3/00

CPC classification number: C12P7/62 ,  C12P9/00

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。

公开(公告)号：US07005678B2

公开(公告)日：2006-02-28

申请号：US10984953

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L31/0312

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。

公开(公告)号：US20060007916A1

公开(公告)日：2006-01-12

申请号：US10982620

申请日：2004-11-03

Applicant: Paul Jones ,  Rajesh Kumar ,  Mehryar Garakani ,  Herbert Wildfeuer

Inventor： Paul Jones ,  Rajesh Kumar ,  Mehryar Garakani ,  Herbert Wildfeuer

IPC: H04L12/28 ,  H04L12/56 ,  H04L12/66

CPC classification number: H04L47/10 ,  H04L12/66 ,  H04L29/06027 ,  H04L47/11 ,  H04L47/2416 ,  H04L47/263 ,  H04L47/34 ,  H04L65/1069 ,  H04L65/1083

Abstract: Text is interleaved and transported along with media data over the same real-time Internet Protocol (IP) media transport session. A network processing device identifies text characters corresponding with text signaling. The identified text characters are formatted into text packets and sent over the same real-time IP media transport session used for real-time media transport. The media transport session can identify the sequence that the text characters are transmitted and can specify a maximum character transfer rate.

Abstract translation: 文本与媒体数据在相同的实时互联网协议（IP）媒体传输会话上进行交织和传输。 网络处理设备识别与文本信令相对应的文本字符。 所识别的文本字符被格式化成文本分组，并通过用于实时媒体传输的相同的实时IP媒体传输会话发送。 媒体传输会话可以识别发送文本字符的顺序，并且可以指定最大字符传输速率。

公开(公告)号：US20050258454A1

公开(公告)日：2005-11-24

申请号：US11135661

申请日：2005-05-24

Applicant: Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

Inventor： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

IPC: H01L21/04 ,  H01L21/336 ,  H01L27/098 ,  H01L27/10 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808

CPC classification number: H01L29/1608 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/66068 ,  H01L29/8083

Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

公开(公告)号：US06962963B2

公开(公告)日：2005-11-08

申请号：US10688582

申请日：2003-10-17

Applicant: Rajesh Kumar ,  Arthur C. Watterson ,  Virinder Singh Parmar ,  Jayant Kumar ,  Lynne Ann Samuelson

Inventor： Rajesh Kumar ,  Arthur C. Watterson ,  Virinder Singh Parmar ,  Jayant Kumar ,  Lynne Ann Samuelson

IPC: C12P7/62 ,  C12P9/00 ,  C08G77/08 ,  C08G77/26 ,  C08G77/445

CPC classification number: C12P7/62 ,  C12P9/00

Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.

Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。

公开(公告)号：US20050151158A1

公开(公告)日：2005-07-14

申请号：US10984953

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/06 ,  H01L21/04 ,  H01L21/337 ,  H01L21/8232 ,  H01L27/06 ,  H01L29/24 ,  H01L29/808 ,  H01L29/15 ,  H01L21/332

CPC classification number: H01L29/66068 ,  H01L29/1608 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.

Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。

公开(公告)号：US20050079224A1

公开(公告)日：2005-04-14

申请号：US10956092

申请日：2004-10-04

Applicant: Michael Rickey ,  J. Ramstack ,  Rajesh Kumar

Inventor： Michael Rickey ,  J. Ramstack ,  Rajesh Kumar

IPC: B65D5/462 ,  A61K9/16 ,  A61K31/519 ,  A61K38/00 ,  A61K38/04 ,  A61K47/32 ,  A61K47/34 ,  B01J8/02 ,  B01J13/08 ,  B01J13/12 ,  B01J13/20 ,  B01J14/00 ,  B01J19/12 ,  B01J19/24 ,  B65D5/46 ,  B65D5/465 ,  B65D71/00 ,  B65D71/36 ,  A61K38/09 ,  A61K9/50 ,  B01J13/02 ,  B01J13/04

CPC classification number: A61K38/09 ,  A61K9/1641 ,  A61K9/1647 ,  A61K9/1682 ,  A61K9/1694 ,  A61K9/5089 ,  A61K31/519 ,  B01J8/025 ,  B01J13/08 ,  B01J13/12 ,  B01J13/206 ,  B01J14/00 ,  B01J19/121 ,  B01J19/122 ,  B01J19/2415 ,  B01J2219/0877

Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.

Abstract translation: 制备具有降低的残留溶剂水平的微粒的方法。 微粒与非水洗涤体系接触以降低微粒中残留溶剂的含量。 优选的非水洗涤系统包括100％乙醇和乙醇与庚烷的混合物。 可以使用硬化溶剂和洗涤溶剂的溶剂共混物在一个步骤中硬化和洗涤微粒，从而不需要后硬化洗涤步骤。

公开(公告)号：US06297100B1

公开(公告)日：2001-10-02

申请号：US09408185

申请日：1999-09-29

Applicant: Rajesh Kumar ,  Masami Naito ,  Hiroki Nakamura ,  Yuichi Takeuchi

Inventor： Rajesh Kumar ,  Masami Naito ,  Hiroki Nakamura ,  Yuichi Takeuchi

IPC: H01L21336

CPC classification number: H01L29/66068 ,  H01L21/0445 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/7828 ,  Y10S438/931

Abstract: In a vertical MOSFET, an inactive ion species is ion-implanted into a J-FET portion, a surface channel layer, and/or a base region. The inactive ion species fill intrinsic carbon vacancies or interact with interstitial Si atoms, which are possible origin or responsible for B-diffusion from the base region. Accordingly, the B-diffusion caused by the intrinsic carbon vacancies when the base region is formed is suppressed. The width of the J-FET portion is prevented from being decreased, thereby preventing an increase in resistance of the J-FET portion. Also, the conductive type of the surface channel layer is prevented from being inverted by diffused impurities.

Abstract translation: 在垂直MOSFET中，将非活性离子种离子注入到J-FET部分，表面沟道层和/或基极区域中。 非活性离子物质填充本征碳空位或与间隙Si原子相互作用，这是可能的起源或负责来自碱性区域的B扩散。 因此，抑制了形成基极区域时由本征碳空位引起的B扩散。 防止J-FET部分的宽度减小，从而防止J-FET部分的电阻增加。 此外，通过扩散的杂质防止了表面通道层的导电类型的反转。

公开(公告)号：US20250073014A1

公开(公告)日：2025-03-06

申请号：US18909484

申请日：2024-10-08

Applicant: James Biggins ,  Rajesh Kumar

Inventor： James BIGGINS ,  Rajesh Kumar

IPC: A61F2/01

Abstract: The present invention relates generally to medical compositions, methods and devices/systems for treating vascular diseases. More particularly, the invention relates to medical methods, devices and kits for distributing drug to surrounding vascular tissue to treat neointimal growth. More specifically, the described invention is intended to overcome shortcomings of existing treatments for peripheral artery disease (PAD). Devices and methods of the present invention are specifically intended to treat patients with PAD involving the infrapopliteal (tibial) arteries, e.g., patients having a clinical indication for treatment below the knees (e.g., claudication and/or critical limb ischemia (CLI), and patients with complex disease states, for reducing one or more of morbidity; treatment complications in treated patient populations, a reduction in target lesion revascularization (TLR) rates; and a reduction in patients populations requiring any type of leg amputation.