公开(公告)号：US20080047582A1

公开(公告)日：2008-02-28

申请号：US11977896

申请日：2007-10-26

申请人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

发明人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC分类号： B08B6/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US07205023B2

公开(公告)日：2007-04-17

申请号：US09891833

申请日：2001-06-25

申请人： Steven Verhaverbeke ,  J. Kelly Truman ,  Rick R. Endo ,  Alexander Ko

发明人： Steven Verhaverbeke ,  J. Kelly Truman ,  Rick R. Endo ,  Alexander Ko

IPC分类号： B05D3/12 ,  B05D1/34 ,  B01F5/04 ,  B08B3/00 ,  B08B3/04

CPC分类号： B01F15/0454 ,  Y10T137/87652

摘要： A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of the chemical. The measured amount of chemical is then used in a single wafer process.

摘要翻译： 用于在单个晶片工艺中混合化学品的方法和设备。 根据本发明，化学品被供给到具有已知体积的管的阀系统中。 化学品被送入阀门系统中，用化学品填充管子以产生测量量的化学品。 然后在单个晶片工艺中使用测量的化学物质量。

公开(公告)号：US20060266387A1

公开(公告)日：2006-11-30

申请号：US11497907

申请日：2006-08-01

申请人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

发明人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC分类号： B08B3/02

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260647A1

公开(公告)日：2006-11-23

申请号：US11496827

申请日：2006-07-31

申请人： Steven Verhaverbeke ,  Kelly Truman

发明人： Steven Verhaverbeke ,  Kelly Truman

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02052 ,  B08B3/08 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  C23G5/00 ,  H01L21/67051 ,  Y10S261/07

摘要： The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.

公开(公告)号：US20060260644A1

公开(公告)日：2006-11-23

申请号：US11497492

申请日：2006-07-31

申请人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

发明人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC分类号： B08B6/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US20060260642A1

公开(公告)日：2006-11-23

申请号：US11496895

申请日：2006-07-31

申请人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

发明人： Steven Verhaverbeke ,  J. Truman ,  Alexander Ko ,  Rick Endo

IPC分类号： B08B6/00 ,  C23G1/00 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  H01L21/02041 ,  Y10S134/902

摘要： An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US07037842B2

公开(公告)日：2006-05-02

申请号：US10637725

申请日：2003-08-07

申请人： Steven Verhaverbeke ,  J. Kelly Truman

发明人： Steven Verhaverbeke ,  J. Kelly Truman

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/02052 ,  H01L21/67051 ,  H01L21/67075 ,  H01L21/6708 ,  Y10S438/907

摘要： A method and apparatus for processing a wafer is described. According to the present invention a wafer is placed on a substrate support. A liquid is then fed through a conduit having an output opening over the wafer. A gas is dissolved in the liquid prior to the liquid reaching the output over the wafer by flowing a gas into the conduit through a venturi opening formed in the conduit. The liquid with dissolved gas is then fed through the opening and onto the wafer where it can be used to etch, clean, or rinse a wafer.

公开(公告)号：US20060046467A1

公开(公告)日：2006-03-02

申请号：US10927572

申请日：2004-08-26

申请人： Steven Verhaverbeke

发明人： Steven Verhaverbeke

IPC分类号： H01L21/4763

CPC分类号： H01L21/31133 ,  G03F7/427 ,  H01L21/76808

摘要： A method of fabricating a semiconductor device. The method comprises creating a via in a dielectric layer that is formed on a substrate, filling the via, and optionally, the surface of the dielectric layer with a sacrificial material, patterning a first photoresist layer on the sacrificial material to define a trench for the semiconductor device, removing the first photoresist layer without affecting the sacrificial material, repatterning a second photoresist layer on the sacrificial material to define the trench for the semiconductor device, forming the trench, and removing the second photoresist layer and the sacrificial material completely after the trench is formed.

摘要翻译： 一种制造半导体器件的方法。 该方法包括在形成在衬底上的电介质层中形成通孔，用牺牲材料填充通孔和任选地介电层的表面，在牺牲材料上图案化第一光致抗蚀剂层以限定用于 半导体器件，去除第一光致抗蚀剂层而不影响牺牲材料，重新绘图牺牲材料上的第二光致抗蚀剂层以限定用于半导体器件的沟槽，形成沟槽，以及在沟槽之后完全去除第二光致抗蚀剂层和牺牲材料 形成了。

公开(公告)号：US06524940B2

公开(公告)日：2003-02-25

申请号：US09843229

申请日：2001-04-26

申请人： Steven Verhaverbeke ,  J. Kelly Truman

发明人： Steven Verhaverbeke ,  J. Kelly Truman

IPC分类号： H01L2144

CPC分类号： C23C8/40 ,  C23C8/02 ,  C23C8/10

摘要： The present invention is a novel termination of silicon dioxide films for use in a single wafer cleaning tool. According to the present invention a silicon dioxide film is formed on a silicon substrate and the film is then terminated with ammonium oxide (—O—NH4). In an embodiment of the present invention the film is terminated by dispensing a mixture containing ammonium oxide onto the film. The present invention also provides a method of forming a gate insulator as well as a gate insulator device.

摘要翻译： 本发明是用于单个晶片清洁工具中的二氧化硅膜的新型终止。 根据本发明，在硅衬底上形成二氧化硅膜，然后用氧化铵（-O-NH 4）封端。 在本发明的一个实施方案中，通过将含有氧化铵的混合物分配到膜上来终止膜。 本发明还提供一种形成栅极绝缘体的方法以及栅极绝缘体器件。

公开(公告)号：US6165912A

公开(公告)日：2000-12-26

申请号：US395398

申请日：1999-09-14

申请人： Christopher F. McConnell ,  Steven Verhaverbeke

发明人： Christopher F. McConnell ,  Steven Verhaverbeke

IPC分类号： C23C18/28 ,  C23C18/16 ,  C23C18/31 ,  H01L21/288 ,  H05K3/18 ,  H01L21/31 ,  B05D1/18 ,  B05D3/10

CPC分类号： H01L21/288 ,  C23C18/1666 ,  C23C18/1831 ,  C23C18/54 ,  H05K3/187

摘要： The present invention provides methods of electrolessly depositing metal onto the surfaces of electronic components using an enclosable single vessel. The methods of the present invention include contacting the electronic components with an activation solution followed by contacting the electronic components with a metal deposition solution. In a preferred embodiment of the present invention, the oxygen levels in the activation solution and metal deposition solution are controlled in a manner for improved processing results. In another preferred embodiment of the present invention, the activation and metal deposition solutions are used one time without reuse.

摘要翻译： 本发明提供使用可封闭的单一容器将金属无电沉积在电子部件的表面上的方法。 本发明的方法包括使电子部件与激活溶液接触，然后使电子部件与金属沉积溶液接触。 在本发明的优选实施方案中，活化溶液和金属沉积溶液中的氧含量以改进的处理结果的方式进行控制。 在本发明的另一优选实施方案中，使用一次活化和金属沉积溶液而不再使用。