公开(公告)号：US20240222515A1

公开(公告)日：2024-07-04

申请号：US18398912

申请日：2023-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeeun YANG ,  Yongsung KIM ,  Sangwook KIM ,  Kwanghee LEE ,  Moonil JUNG

IPC: H01L29/786 ,  H01L29/423 ,  H10B10/00

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H10B10/12

Abstract: Provided are a semiconductor device including an oxide semiconductor layer and an electronic device including the semiconductor device. The semiconductor device includes a substrate, a first electrode provided on the substrate, a second electrode provided on the first electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode provided in a thickness direction of the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein a measurement density relative to a theoretical density of the oxide semiconductor layer is about 90% or more. The oxide semiconductor layer of the semiconductor device may have a more uniform and improved film density, and may improve the reliability of the device due to the improved film density.

公开(公告)号：US20240162350A1

公开(公告)日：2024-05-16

申请号：US18496353

申请日：2023-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE ,  Youngkwan CHA

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1054 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: Semiconductor devices and manufacturing methods thereof are provided. A semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.

公开(公告)号：US20240079468A1

公开(公告)日：2024-03-07

申请号：US18457803

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE

IPC: H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78642 ,  H01L29/7869 ,  H01L21/02491 ,  H01L29/78696

Abstract: Provided are a vertical transistor and a method of manufacturing the same. The vertical transistor includes a substrate, a lower electrode on the substrate and including a metal material, a carbon thin film being conductive and on the lower electrode, an oxide semiconductor layer on the carbon thin film, a gate electrode apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, and an upper electrode on the oxide semiconductor layer, wherein the lower electrode. The carbon thin film, the oxide semiconductor layer, and the upper electrode are arranged in a direction perpendicular to the substrate.

公开(公告)号：US20230116309A1

公开(公告)日：2023-04-13

申请号：US18060140

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Sangwook KIM ,  Yunseong LEE ,  Sanghyun JO ,  Hyangsook LEE

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/51

Abstract: Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

公开(公告)号：US20230100991A1

公开(公告)日：2023-03-30

申请号：US18060372

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Sangwook KIM ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L29/78 ,  H01L21/28 ,  G11C11/22 ,  H01L29/66

Abstract: A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.

公开(公告)号：US20230051857A1

公开(公告)日：2023-02-16

申请号：US17540662

申请日：2021-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghee LEE ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Moonil JUNG ,  Sangjun HONG

IPC: H01L29/786 ,  H01L29/417

Abstract: Provided are oxide semiconductor transistors. The oxide semiconductor transistor includes a substrate, a channel layer arranged on the substrate and having a flat plate shape extending along one plane, a gate electrode facing a part of the channel layer, and a source region and a drain region separated from each other with the gate electrode therebetween, wherein the source region contacts three or more surfaces of the channel layer, and the drain region contacts three or more surfaces of the channel layer.

公开(公告)号：US20220393032A1

公开(公告)日：2022-12-08

申请号：US17888649

申请日：2022-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Yunseong LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/78 ,  H01L27/088 ,  H01L29/51 ,  H01L21/8234 ,  H01L21/28 ,  H01L29/66

Abstract: An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.

公开(公告)号：US20220005923A1

公开(公告)日：2022-01-06

申请号：US17171291

申请日：2021-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taehwan MOON ,  Jinseong HEO ,  Sangwook KIM ,  Yunseong LEE

IPC: H01L49/02 ,  H01L29/49 ,  H01L51/05 ,  H01L29/78 ,  H01L21/02 ,  H01L29/40 ,  H01L27/11507 ,  H01L27/1159

Abstract: Disclosed are a thin film structure and an electronic device including the same. The disclosed thin film structure includes a dielectric material layer between a first material layer and a second material layer. The dielectric material layer includes a dopant in a matrix material having a fluorite structure. The dielectric material layer is uniformly doped with a low concentration of the dopant, and has ferroelectricity.

公开(公告)号：US20170083494A1

公开(公告)日：2017-03-23

申请号：US15263539

申请日：2016-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Hyunseok SHIN ,  Seungnyun KIM ,  Yongsang YUN ,  Changryong HEO

IPC: G06F17/24 ,  G06F3/16 ,  H04R5/027

CPC classification number: G06F3/167 ,  H04R1/1041 ,  H04R3/005 ,  H04R3/12 ,  H04R5/027 ,  H04R2201/109 ,  H04R2225/55 ,  H04R2420/01 ,  H04R2430/01 ,  H04R2430/20 ,  H04R2430/21

Abstract: The present disclosure provides an electronic device and methods for operating the electronic device. The electronic device may include: a housing having a coupling member removably attachable to an ear of a user; one or more microphones provided within the housing and configured to detect an external sound; at least one speaker provided within the housing; at least one communication circuit within the housing; a processor provided within the housing and electrically coupled to the one or more microphones, the at least one speaker, and the at least one communication circuit; and at least one memory provided within the housing, and electrically coupled to the processor. The memory may store instructions that cause, when executed, the processor to receive the detected external sound from the one or more microphones, to identify an direction of the external sound in relation to the user, to determine whether the direction of the external sound is within a predefined range, and to extract at least a portion of the external sound for further processing when the direction of the external sound is within the predefined range.

公开(公告)号：US20150169425A1

公开(公告)日：2015-06-18

申请号：US14532506

申请日：2014-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Sohmann KIM ,  Youngkou HAN

IPC: G06F11/32 ,  G06F11/30

CPC classification number: H04M1/72519 ,  G06F3/04817 ,  H04M1/72583 ,  H04M2250/14 ,  H04M2250/66 ,  H04W8/183 ,  H04W88/06

Abstract: A method of operating an electronic device is provided. The method includes recognizing a number of connection components provided in the electronic device, storing count data corresponding to the recognized number of the connection components in a memory of the electronic device, acquiring the count data from the memory, and displaying application information corresponding to the acquired count data through a display connected to the electronic device.

Abstract translation: 提供一种操作电子设备的方法。 该方法包括识别电子设备中提供的多个连接组件，将与识别的连接组件数相对应的计数数据存储在电子设备的存储器中，从存储器获取计数数据，并显示对应于 通过连接到电子设备的显示器获取计数数据。