METHOD FOR MANUFACTURING AN ELECTROOPTICAL DEVICE
    41.
    发明申请
    METHOD FOR MANUFACTURING AN ELECTROOPTICAL DEVICE 审中-公开
    制造电子器件的方法

    公开(公告)号:US20150248030A1

    公开(公告)日:2015-09-03

    申请号:US14709961

    申请日:2015-05-12

    Abstract: An object of the present invention is to provide an electrooptical device having high operation performance and reliability, and a method of manufacturing the electrooptical device.Lov region 207 is disposed in n-channel TFT 302 that comprises a driver circuit, and a TFT structure which is resistant to hot carriers is realized. Loff regions 217 to 220 are disposed in n-channel TFT 304 that comprises a pixel section, and a TFT structure of low off current is realized. An input-output signal wiring 305 and gate wiring 306 are formed by laminating a first wiring and a second wiring having lower resistivity than the first wiring, and wiring resistivity is steeply reduced.

    Abstract translation: 本发明的目的是提供一种具有高操作性能和可靠性的电光装置,以及制造电光装置的方法。 Lov区域207设置在包括驱动电路的n沟道TFT 302中,并且实现了耐热载流子的TFT结构。 Loff区域217至220设置在包括像素部分的n沟道TFT 304中,并且实现了低截止电流的TFT结构。 通过层叠具有比第一布线低的电阻率的第一布线和第二布线来形成输入输出信号布线305和栅极布线306,并且布线电阻率急剧减小。

    SEMICONDUCTOR DEVICE AND TOUCH PANEL
    42.
    发明申请
    SEMICONDUCTOR DEVICE AND TOUCH PANEL 审中-公开
    半导体器件和触控面板

    公开(公告)号:US20150200213A1

    公开(公告)日:2015-07-16

    申请号:US14671207

    申请日:2015-03-27

    Abstract: A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which includes a plurality of pixels and the photosensor adjacent to at least one of the plurality of pixels is provided. Each of the plurality of pixels includes a pair of terminals. One of the pair of terminals is a reflective conductive film. Alternatively, each of the pair of terminals is a light-transmitting conductive film.

    Abstract translation: 提供了能够降低功耗的触摸面板,防止了触摸面板的制造成本的上升。 提供一种光传感器,其包括在一对电极之间包括非单晶半导体层的光接收元件和在沟道形成区域中包括氧化物半导体层的晶体管。 提供包括多个像素的触摸面板和与多个像素中的至少一个相邻的光电传感器。 多个像素中的每一个包括一对终端。 一对端子之一是反射导电膜。 或者,一对端子中的每一个是透光导电膜。

    PORTABLE ELECTRONIC DEVICE
    46.
    发明申请
    PORTABLE ELECTRONIC DEVICE 审中-公开
    便携式电子设备

    公开(公告)号:US20140368982A1

    公开(公告)日:2014-12-18

    申请号:US14477119

    申请日:2014-09-04

    Abstract: A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

    Abstract translation: 提供即使在通过电磁感应的非接触充电提供的电力低的情况下也能够操作的便携式电子设备。 便携式电子设备包括反射型液晶显示器,其包括具有氧化物半导体的晶体管,包括能够通过非接触电荷充电的可再充电电池的电源部分和包括非易失性半导体存储器件的信号处理部分。 在便携式电子装置中,存储在可再充电电池中的电力用于反射型液晶显示器和信号处理部分。

    SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF
    47.
    发明申请
    SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF 审中-公开
    半导体器件及其工作方法

    公开(公告)号:US20140246670A1

    公开(公告)日:2014-09-04

    申请号:US14275531

    申请日:2014-05-12

    Inventor: Jun KOYAMA

    Abstract: A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10−13 A or less is used as a transfer transistor of the solid-state image sensor, the potential of the signal charge storage portion is kept constant, so that a dynamic range can be improved. When a silicon semiconductor which can be used for a complementary metal oxide semiconductor is used for a peripheral circuit, a high-speed semiconductor device with low power consumption can be manufactured.

    Abstract translation: 提供了一种长时间保持电位且包括具有稳定电特性的薄膜晶体管的固态图像传感器。 通过将信号电荷存储部分初始化为固态图像传感器中的光电转换元件部分的阴极电位,省略了复位晶体管。 当使用包括氧化物半导体层并且具有1×10-13A或更小的截止电流的薄膜晶体管作为固态图像传感器的转移晶体管时,信号电荷存储部分的电位为 保持恒定,从而可以提高动态范围。 当将可用于互补金属氧化物半导体的硅半导体用于外围电路时,可以制造具有低功耗的高速半导体器件。

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