Abstract:
Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
Abstract:
A meta projector is provided, including an edge emitting device configured to emit light through a side surface thereof, a meta-structure layer spaced apart from the upper surface of the edge emitting device that includes a plurality of nanostructures having a sub-wavelength dimension smaller than a wavelength of the light emitted from the edge emitting device, and a path changing member configured to change a path of the light emitted from the edge emitting device so as to direct the path toward the meta-structure layer. The meta projector may thus be configured to emit a light pattern of structured light, based on directing the light emitted from the edge emitting device through the meta-structure layer.
Abstract:
Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of λ/4, where λ is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.
Abstract:
A depth image measuring camera includes an illumination device configured to irradiate an object with light, and a light-modulating optical system configured to receive the light reflected from the object. The depth image measuring camera includes an image sensor configured to generate an image of the object by receiving light incident on the image sensor that passes through the light-modulating optical system. The light-modulating optical system includes a plurality of lenses having a same optical axis, and an optical modulator configured to operate in two modes for measuring a depth of the object.
Abstract:
An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.