CAMERA FOR MEASURING DEPTH IMAGE AND METHOD OF MEASURING DEPTH IMAGE
    5.
    发明申请
    CAMERA FOR MEASURING DEPTH IMAGE AND METHOD OF MEASURING DEPTH IMAGE 有权
    用于测量深度图像的相机和测量深度图像的方法

    公开(公告)号:US20160138910A1

    公开(公告)日:2016-05-19

    申请号:US14699068

    申请日:2015-04-29

    IPC分类号: G01B11/22 G01S17/06 H04N13/02

    摘要: A depth image measuring camera includes an illumination device configured to irradiate an object with light, and a light-modulating optical system configured to receive the light reflected from the object. The depth image measuring camera includes an image sensor configured to generate an image of the object by receiving light incident on the image sensor that passes through the light-modulating optical system. The light-modulating optical system includes a plurality of lenses having a same optical axis, and an optical modulator configured to operate in two modes for measuring a depth of the object.

    摘要翻译: 深度图像测量照相机包括被配置为用光照射物体的照明装置和被配置为接收从物体反射的光的光调制光学系统。 深度图像测量摄像机包括:图像传感器,被配置为通过接收入射到通过光调制光学系统的图像传感器上的光来产生对象的图像。 光调制光学系统包括具有相同光轴的多个透镜,以及配置成以两种模式操作的光调制器,用于测量物体的深度。

    TRANSMISSIVE OPTICAL SHUTTER AND METHOD OF FABRICATING THE SAME
    6.
    发明申请
    TRANSMISSIVE OPTICAL SHUTTER AND METHOD OF FABRICATING THE SAME 审中-公开
    传输光学切换器及其制作方法

    公开(公告)号:US20160057404A1

    公开(公告)日:2016-02-25

    申请号:US14719850

    申请日:2015-05-22

    摘要: A transmissive optical shutter and a method of fabricating the same are provided. The transmissive optical shutter includes a first contact layer, an epitaxial layer disposed over the first contact layer, the epitaxial layer being configured to modulate intensity of incident light having a specific wavelength, a second contact layer disposed on the epitaxial layer, a first electrode disposed on the first contact layer, at least one second electrode disposed on the second contact layer, and a substrate disposed under the first contact layer.

    摘要翻译: 提供了一种透射光学快门及其制造方法。 透射光学快门包括第一接触层,设置在第一接触层上的外延层,外延层被配置为调制具有特定波长的入射光的强度,设置在外延层上的第二接触层,设置在第一接触层上的第一电极 在第一接触层上,设置在第二接触层上的至少一个第二电极和设置在第一接触层下方的基板。

    LIGHT DETECTING DEVICE AND METHOD OF MANUFACTURING SAME

    公开(公告)号:US20220102573A1

    公开(公告)日:2022-03-31

    申请号:US17173339

    申请日:2021-02-11

    摘要: A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.

    OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE HAVING ASYMMETRIC MULTI-ENERGY LEVELS

    公开(公告)号:US20170200856A1

    公开(公告)日:2017-07-13

    申请号:US15332528

    申请日:2016-10-24

    IPC分类号: H01L33/06 H01L33/60 H01L33/30

    摘要: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.