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公开(公告)号：US20190067362A1
公开(公告)日：2019-02-28
申请号：US15870022
申请日：2018-01-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung PARK , Sanghun LEE
IPC: H01L27/146 , H01L31/0352 , H01L31/0224 , H01L31/0304 , H01L31/109 , A61B5/00 , G01N21/3554 , G01J1/44
Abstract: An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer.
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公开(公告)号：US20170059887A1
公开(公告)日：2017-03-02
申请号：US15050911
申请日：2016-02-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung PARK , Byunghoon NA , Yonghwa PARK
IPC: G02F1/017
CPC classification number: G02F1/017 , G02F2201/346 , G02F2201/38 , G02F2202/101 , G02F2203/11 , H01S5/06226 , H01S5/06256 , H01S5/10 , H01S5/1021 , H01S5/1042 , H01S5/187 , H01S5/20 , H01S5/2013
Abstract: An optical modulator is provided, including a lower reflection layer, an active layer formed on the lower reflection layer, and an upper reflection layer formed on the active layer. The active layer includes a multiple quantum well structure including a quantum well layer and a quantum barrier layer. The upper reflection layer includes a dielectric material. A plurality of micro cavity layers are included in the upper reflection layer.
Abstract translation: 提供一种光调制器，包括下反射层，形成在下反射层上的有源层和形成在有源层上的上反射层。 有源层包括包括量子阱层和量子势垒层的多量子阱结构。 上反射层包括电介质材料。 多个微腔层包括在上反射层中。
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公开(公告)号：US20160018676A1
公开(公告)日：2016-01-21
申请号：US14677027
申请日：2015-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung PARK , Byunghoon NA , Yonghwa PARK
CPC classification number: G02F1/01708 , G02B6/12002 , G02B6/124 , G02B6/134 , G02B2006/12104 , G02B2006/12128 , G02B2006/12142 , G02F1/017 , G02F1/01716 , G02F1/01725 , G02F2001/0155 , G02F2001/01733 , G02F2001/01741 , G02F2201/307 , G02F2202/108
Abstract: Provided are a transmission type high-absorption optical modulator and a method of manufacturing the transmission type high-absorption optical modulator. The optical modulator includes: a substrate; a lower distributed Bragg reflector (DBR) layer on the substrate; a lower clad layer on the lower DBR layer; an active layer that is formed on the lower clad layer and includes a quantum well layer and a quantum barrier layer; an upper clad layer on the active layer; an upper DBR layer on the upper clad layer; and a doping layer that supplies carriers to the quantum well layer. In the optical modulator, the doping layer may be included in the quantum barrier layer or in at least one of the upper and lower clad layers.
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公开(公告)号：US20200309688A1
公开(公告)日：2020-10-01
申请号：US16831202
申请日：2020-03-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung PARK , Sanghun Lee , Sungwoo Hwang
IPC: G01N21/3554 , H04N5/225 , G06T11/60 , G01N21/359
Abstract: A skin care apparatus having a moisture distribution image photographing function includes a frame having at least one function and a moisture distribution image photographing apparatus mounted on the frame, the moisture distribution image photographing apparatus including a substrate, an image sensor mounted on the substrate, and a lens that collects incident light on the image sensor, the substrate including a circuit module for driving the image sensor and processing an image obtained through the image sensor, and the image sensor including a moisture sensor array in which the center of a main absorption wavelength is in a short wavelength infrared (SWIR) ray band.
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5.发明申请公开(公告)号：US20160138910A1
公开(公告)日：2016-05-19
申请号：US14699068
申请日：2015-04-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jangwoo YOU , Byunghoon NA , Yonghwa PARK , Changyoung PARK , Heesun YOON , Sanghun LEE , Myungjae JEON
CPC classification number: H04N13/204 , G01S7/4816 , G01S17/023 , G01S17/06 , G01S17/89 , H04N13/254 , H04N13/286 , H04N13/289
Abstract: A depth image measuring camera includes an illumination device configured to irradiate an object with light, and a light-modulating optical system configured to receive the light reflected from the object. The depth image measuring camera includes an image sensor configured to generate an image of the object by receiving light incident on the image sensor that passes through the light-modulating optical system. The light-modulating optical system includes a plurality of lenses having a same optical axis, and an optical modulator configured to operate in two modes for measuring a depth of the object.
Abstract translation: 深度图像测量照相机包括被配置为用光照射物体的照明装置和被配置为接收从物体反射的光的光调制光学系统。 深度图像测量摄像机包括：图像传感器，被配置为通过接收入射到通过光调制光学系统的图像传感器上的光来产生对象的图像。 光调制光学系统包括具有相同光轴的多个透镜，以及配置成以两种模式操作的光调制器，用于测量物体的深度。
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Patent Agency Ranking
公开(公告)号：US20160057404A1
公开(公告)日：2016-02-25
申请号：US14719850
申请日：2015-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sanghun LEE , Changyoung PARK , Yonghwa PARK
CPC classification number: H04N5/2254 , G02F1/017 , G02F2001/0155 , H04N5/2257
Abstract: A transmissive optical shutter and a method of fabricating the same are provided. The transmissive optical shutter includes a first contact layer, an epitaxial layer disposed over the first contact layer, the epitaxial layer being configured to modulate intensity of incident light having a specific wavelength, a second contact layer disposed on the epitaxial layer, a first electrode disposed on the first contact layer, at least one second electrode disposed on the second contact layer, and a substrate disposed under the first contact layer.
Abstract translation: 提供了一种透射光学快门及其制造方法。 透射光学快门包括第一接触层，设置在第一接触层上的外延层，外延层被配置为调制具有特定波长的入射光的强度，设置在外延层上的第二接触层，设置在第一接触层上的第一电极 在第一接触层上，设置在第二接触层上的至少一个第二电极和设置在第一接触层下方的基板。
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公开(公告)号：US20150286078A1
公开(公告)日：2015-10-08
申请号：US14492733
申请日：2014-09-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongchul CHO , Yongtak LEE , Byunghoon NA , Changyoung PARK , Gunwu JU , Yonghwa PARK
IPC: G02F1/017
CPC classification number: G02F1/01725 , B82Y20/00 , G02F1/133605 , G02F2001/0157 , G02F2001/01733 , G02F2001/0175 , G02F2001/01766 , H01L23/528 , H01L23/53223 , H01L31/00 , H01L31/035236 , H01L31/075 , H01L31/105 , H01L33/04 , H01L33/10 , H01L33/42 , H01L33/46 , H01L33/502 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/05124 , H01L2924/00 , H01L2924/00014 , H01L2924/12042 , Y02E10/548 , Y10S977/755
Abstract: An optical device includes an active layer that includes at least two outer barriers and at least one coupled quantum well that is inserted between the at least two outer barriers. Each coupled quantum well includes at least three quantum well layers and at least two coupling barriers that are respectively provided between the at least three quantum well layers. Thicknesses of two quantum well layers disposed at opposite end portions of the at least three quantum well layers are less than a thickness of the other quantum well layer disposed between the two quantum well layers disposed at the opposite end portions. A bandgap of the two quantum well layers disposed at the opposite end portions may be higher than a bandgap of the other quantum well layer disposed between the two quantum well layers.
Abstract translation: 光学装置包括有源层，其包括至少两个外部屏障和至少一个耦合的量子阱，其插入在所述至少两个外部屏障之间。 每个耦合量子阱包括分别设置在至少三个量子阱层之间的至少三个量子阱层和至少两个耦合势垒。 设置在至少三个量子阱层的相对端部的两个量子阱层的厚度小于设置在设置在相对端部的两个量子阱层之间的另一个量子阱层的厚度。 设置在相对端部的两个量子阱层的带隙可以高于设置在两个量子阱层之间的另一个量子阱层的带隙。
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8.发明公开公开(公告)号：US20240176170A1
公开(公告)日：2024-05-30
申请号：US18196739
申请日：2023-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Changyoung PARK , Sanghun Lee
IPC: G02F1/017 , G02F1/365 , H01L31/0216
CPC classification number: G02F1/01708 , G02F1/01716 , G02F1/365 , H01L31/02164
Abstract: Provided is an infrared modulator including a silicon substrate, a multiple buffer layer on the silicon substrate, the multiple buffer layer including indium phosphide (InP), a first type semiconductor layer on the multiple buffer layer, the first type semiconductor layer including InP, a light absorption layer on the first type semiconductor layer, the light absorption layer including a quantum well structure including indium gallium arsenic phosphide (InGaAsP), and a second type semiconductor layer on the light absorption layer, the second type semiconductor layer including InP.
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公开(公告)号：US20220102573A1
公开(公告)日：2022-03-31
申请号：US17173339
申请日：2021-02-11
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： Changyoung PARK , Sanghun LEE
IPC: H01L31/103 , H01L31/0216 , H01L31/18
Abstract: A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.
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10.发明申请公开(公告)号：US20170200856A1
公开(公告)日：2017-07-13
申请号：US15332528
申请日：2016-10-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Byunghoon NA , Changyoung PARK , Yonghwa PARK
Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.
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