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    Method of fabricating a strained silicon channel FinFET
    44.
    发明申请
    Method of fabricating a strained silicon channel FinFET 有权
    制造应变硅沟道FinFET的方法

    公开(公告)号：US20050153486A1

    公开(公告)日：2005-07-14

    申请号：US10755763

    申请日：2004-01-12

    Applicant: Qi Xiang ,  James Pan ,  Jung-Suk Goo

    Inventor： Qi Xiang ,  James Pan ,  Jung-Suk Goo

    IPC: H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/8234

    CPC classification number: H01L29/785 ,  H01L29/66795 ,  H01L29/7842

    Abstract: An exemplary embodiment relates to a method of FinFET channel structure formation. The method can include providing a compound semiconductor layer above an insulating layer, providing a trench in the compound semiconductor layer, and providing a strained semiconductor layer above the compound semiconductor layer and within the trench. The method can also include removing the strained semiconductor layer from above the compound semiconductor layer, thereby leaving the strained semiconductor layer within the trench and removing the compound semiconductor layer to leave the strained semiconductor layer and form the fin-shaped channel region.

    Abstract translation: 示例性实施例涉及FinFET沟道结构形成的方法。 该方法可以包括在绝缘层之上提供化合物半导体层，在化合物半导体层中提供沟槽，并在化合物半导体层之上和沟槽内提供应变半导体层。 该方法还可以包括从化合物半导体层上方去除应变半导体层，从而将应变半导体层留在沟槽内，并去除化合物半导体层以留下应变半导体层并形成鳍状沟道区。

    Methods of forming hemisperical grained silicon on a template on a semiconductor work object
    48.
    发明申请
    Methods of forming hemisperical grained silicon on a template on a semiconductor work object 审中-公开
    在半导体工件上的模板上形成半晶粒硅的方法

    公开(公告)号：US20050051082A1

    公开(公告)日：2005-03-10

    申请号：US10943612

    申请日：2004-09-17

    Applicant: Guoqing Chen ,  James Pan

    Inventor： Guoqing Chen ,  James Pan

    IPC: H01L21/02 ,  C30B23/00 ,  C30B1/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC classification number: H01L28/84 ,  H01L28/90

    Abstract: The present invention provides a method of preparing a surface of a silicon wafer for formation of HSG structures. The method contemplates providing a wafer having at least one HSG template comprising polysilicon formed in BPSG, the HSG template being covered by silicon dioxide. The wafer is treated with a cleaning agent to clean the surface of the wafer. Next, the wafer is treated with a conditioning agent. The conditioning agent removes native oxide from the HSG template without excessively etching structural BPSG. Preferably, the conditioning agent also removes a thin layer of polysilicon on the HSG template. The wafer is then transferred to a process chamber for HSG formation.

    Abstract translation: 本发明提供一种制备用于形成HSG结构的硅晶片的表面的方法。 该方法考虑提供具有包含在BPSG中形成的多晶硅的至少一个HSG模板的晶片，HSG模板被二氧化硅覆盖。 用清洁剂处理晶片以清洁晶片的表面。 接下来，用调理剂处理晶片。 调理剂从HSG模板中除去天然氧化物，而不会过度蚀刻结构BPSG。 优选地，调理剂还在HSG模板上除去薄层的多晶硅。 然后将晶片转移到用于HSG形成的处理室。

    Methods of forming hemispherical grained silicon on a template on a semiconductor work object
    49.
    发明授权
    Methods of forming hemispherical grained silicon on a template on a semiconductor work object 失效
    在半导体工件上的模板上形成半球形晶粒硅的方法

    公开(公告)号：US06835617B2

    公开(公告)日：2004-12-28

    申请号：US10361107

    申请日：2003-02-07

    Applicant: Guoqing Chen ,  James Pan

    Inventor： Guoqing Chen ,  James Pan

    IPC: H01L218242

    CPC classification number: H01L28/84 ,  H01L28/90

    Abstract: The present invention provides a method of preparing a surface of a silicon wafer for formation of HSG structures. The method contemplates providing a wafer having at least one HSG template comprising polysilicon formed in BPSG, the HSG template being covered by silicon dioxide. The wafer is treated with a cleaning agent to clean the surface of the wafer. Next, the wafer is treated with a conditioning agent. The conditioning agent removes native oxide from the HSG template without excessively etching structural BPSG. Preferably, the conditioning agent also removes a thin layer of polysilicon on the HSG template. The wafer is then transferred to a process chamber for HSG formation.

    Abstract translation: 本发明提供一种制备用于形成HSG结构的硅晶片的表面的方法。 该方法考虑提供具有包含在BPSG中形成的多晶硅的至少一个HSG模板的晶片，HSG模板被二氧化硅覆盖。 用清洁剂处理晶片以清洁晶片的表面。 接下来，用调理剂处理晶片。 调理剂从HSG模板中除去天然氧化物，而不会过度蚀刻结构BPSG。 优选地，调理剂还在HSG模板上除去薄层的多晶硅。 然后将晶片转移到用于HSG形成的处理室。

    High selectivity etching process for oxides
    50.
    发明授权
    High selectivity etching process for oxides 失效
    氧化物的高选择性蚀刻工艺

    公开(公告)号：US06355182B2

    公开(公告)日：2002-03-12

    申请号：US09780166

    申请日：2001-02-09

    Applicant: Randhir Thakur ,  James Pan

    Inventor： Randhir Thakur ,  James Pan

    IPC: D44C122

    CPC classification number: H01L28/40 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31116

    Abstract: A process for etching oxides having differing densities which is not only highly selective, but which also produces uniform etches is provided and includes the steps of providing an oxide layer on a surface of a substrate, exposing the oxide layer to a liquid comprising a halide-containing species, and exposing the oxide layer to a gas phase comprising a halide-containing species. The process desirably is used to selectively etch a substrate surface in which the surface of the substrate includes on a first portion thereof a first silicon oxide and on a second portion thereof a second silicon oxide, with the first silicon oxide being relatively more dense than the second silicon oxide, such as, for example, a process which forms a capacitor storage cell on a semiconductor substrate.

    Abstract translation: 提供了不仅具有高选择性但也产生均匀蚀刻的具有不同密度的氧化物的方法，包括以下步骤：在衬底的表面上提供氧化物层，将氧化物层暴露于包含卤化物 - 并将氧化物层暴露于含有卤化物的物质的气相中。 该方法理想地用于选择性地蚀刻其中衬底的表面在其第一部分上包含第一氧化硅的衬底表面，并且在其第二部分上选择性地蚀刻第二氧化硅，其中第一氧化硅相对于 第二氧化硅，例如在半导体衬底上形成电容器存储单元的工艺。

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