公开(公告)号：US09494830B2

公开(公告)日：2016-11-15

申请号：US14290263

申请日：2014-05-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kouhei Toyotaka ,  Masahiko Hayakawa ,  Daisuke Matsubayashi ,  Shinpei Matsuda

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: G02F1/134309 ,  G02F1/133345 ,  G02F1/1343 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: The following semiconductor device provides high reliability and a narrower frame width. The semiconductor device includes a driver circuit and a pixel portion. The driver circuit has a first transistor including a first gate and a second gate electrically connected to each other with a semiconductor film sandwiched therebetween, and a second transistor electrically connected to the first transistor. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor. The liquid crystal element includes a first transparent conductive film electrically connected to the third transistor, a second conductive film, and a liquid crystal layer. The capacitor includes the first conductive film, a third transparent conductive film, and a nitride insulating film. The nitride insulating film is positioned between the first transparent conductive film and the third transparent conductive film, and positioned between the semiconductor film and the second gate of the first transistor.

Abstract translation: 以下半导体器件提供高可靠性和较窄的帧宽度。 半导体器件包括驱动电路和像素部分。 驱动电路具有包括第一栅极和第二栅极的第一晶体管，其中夹在其间的半导体膜彼此电连接，第二晶体管与第一晶体管电连接。 像素部分包括第三晶体管，液晶元件和电容器。 液晶元件包括与第三晶体管电连接的第一透明导电膜，第二导电膜和液晶层。 电容器包括第一导电膜，第三透明导电膜和氮化物绝缘膜。 氮化物绝缘膜位于第一透明导电膜和第三透明导电膜之间，位于第一晶体管的半导体膜和第二栅极之间。

公开(公告)号：US09461341B2

公开(公告)日：2016-10-04

申请号：US14107237

申请日：2013-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei Momo ,  Hiroyuki Miyake ,  Kei Takahashi

IPC: H02J7/00 ,  H01M10/46 ,  H01M10/42 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/0585 ,  H01M4/96 ,  H01M10/44 ,  H02J7/02 ,  H02J7/35 ,  H01M2/16 ,  H01M10/02 ,  H01M10/04 ,  H01M4/02

CPC classification number: H02J7/0068 ,  H01M2/1673 ,  H01M4/96 ,  H01M10/02 ,  H01M10/045 ,  H01M10/0525 ,  H01M10/0583 ,  H01M10/0585 ,  H01M10/4242 ,  H01M10/425 ,  H01M10/44 ,  H01M10/46 ,  H01M2004/025 ,  H01M2010/4271 ,  H02J7/007 ,  H02J7/025 ,  H02J7/35 ,  H02J50/12 ,  H02J50/20 ,  H02J50/80 ,  Y02E60/122 ,  Y02E60/50 ,  Y02T10/7011

Abstract: A decrease in the capacity of a power storage device is inhibited by adjusting or reducing imbalance in the amount of inserted and extracted carrier ions between positive and negative electrodes, which is caused by decomposition of an electrolyte solution of the negative electrode. Further, the capacity of the power storage device can be restored. Furthermore, impurities in the electrolyte solution can be decomposed with the use of the third electrode. A power storage device including positive and negative electrodes, an electrolyte, and a third electrode is provided. The third electrode has an adequate electrostatic capacitance. The third electrode can include a material with a large surface area. In addition, a method for charging the power storage device including the steps of performing charging by applying a current between the positive and negative electrodes, and performing additional applying a current between the third electrode and the negative electrode is provided.

Abstract translation: 通过调节或减少由负极的电解液的分解引起的正极和负极之间的插入和提取的载流子的量的不平衡，可以抑制蓄电装置的容量的下降。 此外，可以恢复蓄电装置的容量。 此外，电解质溶液中的杂质可以通过使用第三电极而分解。 提供了包括正极和负极，电解质和第三电极的蓄电装置。 第三电极具有足够的静电电容。 第三电极可以包括具有大表面积的材料。 另外，提供了一种蓄电装置的充电方法，包括以下步骤：通过在正极和负极之间施加电流并且在第三电极和负极之间执行附加的电流来进行充电。

公开(公告)号：US09449574B2

公开(公告)日：2016-09-20

申请号：US14049300

申请日：2013-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki Miyake ,  Hideaki Shishido ,  Seiko Inoue

IPC: G09G3/36 ,  G02F1/1368

CPC classification number: G09G3/3696 ,  G02F1/1368 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2320/0219

Abstract: In a video voltage comparator circuit, an average of first video voltages applied to pixel electrodes of pixels in the second-half rows in a k-th frame period (k is a natural number) is compared with an average of second video voltages applied to pixel electrodes of pixels in the first-half rows in a (k+1)th frame period for each row. In an overdrive voltage switching circuit, when a difference obtained from the comparison in the video voltage comparator circuit is greater than or equal to a threshold value, the overdrive voltage in the (k+1)th frame period is switched to a first overdrive voltage, and when the difference obtained from the comparison in the video voltage comparator circuit is less than the threshold value, the overdrive voltage in the (k+1)th frame period is switched to a second overdrive voltage lower than the first overdrive voltage.

Abstract translation: 在视频电压比较器电路中，将施加到第k帧周期（k为自然数）的后半行像素的像素电极的第一视频电压的平均值与施加到 在每行的第（k + 1）帧周期中的前半行中的像素的像素电极。 在过驱动电压切换电路中，当从视频电压比较器电路的比较得到的差大于或等于阈值时，将第（k + 1）帧周期中的过驱动电压切换为第一过驱动电压 ，并且当从视频电压比较器电路中的比较得到的差小于阈值时，将第（k + 1）帧周期中的过驱动电压切换到低于第一过驱动电压的第二过驱动电压。

公开(公告)号：US09449569B2

公开(公告)日：2016-09-20

申请号：US13940788

申请日：2013-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata ,  Hiroyuki Miyake

IPC: G09G3/36 ,  G02F1/137

CPC classification number: G09G3/3614 ,  G02F2001/13793 ,  G09G3/3648 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235

Abstract: A liquid crystal display device capable of consuming less power and a method for driving the liquid crystal display device are provided. The liquid crystal display device includes a pixel portion, a light supply portion sequentially supplying lights of a plurality of hues to the pixel portion, a counter counting the number of frame periods, a signal generator determining timing of inverting the polarity of an image signal every plural consecutive frame periods by using data on the number of frame periods counted by the counter, and a controller inverting the polarity of the image signal in accordance with the timing. A plurality of pixels are provided in the pixel portion. The image signal whose polarity is inverted every plural frame periods is input to the plurality of pixels.

Abstract translation: 提供能够消耗较少功率的液晶显示装置和驱动液晶显示装置的方法。 液晶显示装置包括：像素部，向像素部顺序地供给多种色调的光的供光部，对帧周期数进行计数的计数器，确定每次图像信号的极性反转的定时 通过使用由计数器计数的帧周期数的数据和控制器根据定时反转图像信号的极性的多个连续帧周期。 像素部中设置有多个像素。 将极性在每个帧周期反转的图像信号输入到多个像素。

公开(公告)号：US09424950B2

公开(公告)日：2016-08-23

申请号：US14315601

申请日：2014-06-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G11C19/00 ,  G11C19/28 ,  G09G3/32 ,  G09G3/36

CPC classification number: H01L27/124 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0626 ,  G09G2330/021 ,  G11C19/28 ,  G11C19/287 ,  H01L27/1225 ,  H01L29/7869

Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

Abstract translation: 半导体器件包括具有相同导电类型的第一和第二晶体管和电路。 第一晶体管的源极和漏极之一与第二晶体管的源极和漏极电连接。 第一和第三电位通过各自的布线提供给电路。 第二电位和第一时钟信号分别被提供给第一和第二晶体管的源极和漏极中的其它电极。 第二个时钟信号被提供给电路。 第三电位高于高于第一电位的第二电位。 第四个电位等于或高于第三个电位。 第一时钟信号交替第二和第四电位，第二时钟信号交替第一和第三电位。 该电路控制第一和第二晶体管的栅极与布线之间的电连接。

公开(公告)号：US09406398B2

公开(公告)日：2016-08-02

申请号：US14068012

申请日：2013-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hiroyuki Miyake

IPC: G11C19/28 ,  G09G3/32

CPC classification number: H03K17/693 ,  G09G3/2092 ,  G09G3/3266 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H03K17/002

Abstract: An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.

公开(公告)号：US09269315B2

公开(公告)日：2016-02-23

申请号：US14196368

申请日：2014-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G09G3/36 ,  G02F1/1362

CPC classification number: G09G3/3655 ,  G02F1/136213 ,  G09G2300/0426

Abstract: A highly reliable semiconductor device and a method for driving the highly reliable semiconductor device is provided. In a semiconductor device in which a light-transmitting storage capacitor having a MOS capacitor structure is provided and a light-transmitting semiconductor film functioning as one electrode of the storage capacitor is electrically connected to a capacitor line, a shift of a threshold voltage of the storage capacitor in the positive direction is suppressed in a period during which an image is not displayed. For example, the shift of the threshold voltage of the storage capacitor in the positive direction is suppressed by application of a negative bias to a pixel electrode functioning as the other electrode of the storage capacitor.

Abstract translation: 提供了一种高度可靠的半导体器件和用于驱动高度可靠的半导体器件的方法。 在具有MOS电容器结构的透光保持电容器和用作辅助电容器的一个电极的透光半导体膜电连接到电容器线路的半导体器件中，阈值电压的偏移 在不显示图像的期间，抑制正方向的保持电容。 例如，通过对作为保持电容器的另一个电极起作用的像素电极施加负偏压来抑制存储电容器的正方向的阈值电压的偏移。

公开(公告)号：US09251748B2

公开(公告)日：2016-02-02

申请号：US14548966

申请日：2014-11-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/36 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  G02F1/1345

CPC classification number: G09G3/3618 ,  G02F1/1345 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/044 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/04 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/10 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2340/16 ,  G09G2354/00

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US09208742B2

公开(公告)日：2015-12-08

申请号：US14325603

申请日：2014-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Kouhei Toyotaka ,  Shunpei Yamazaki

IPC: G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/3677 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/124

Abstract: To provide a semiconductor device including a narrowed bezel obtained by designing a gate driver circuit. A gate driver of a display device includes a shift register unit, a demultiplexer circuit, and n signal lines. By connecting the n signal lines for transmitting clock signals to one stage of the shift register unit, (n−3) output signals can be output. The larger n becomes, the smaller the rate of signal lines for transmitting clock signals which do not contribute to output becomes; accordingly, the area of the shift register unit part is small compared to a conventional structure in which one stage of a shift register unit outputs one output signal. Therefore, the gate driver circuit can have a narrow bezel.

Abstract translation: 提供一种包括通过设计栅极驱动器电路而获得的窄边框的半导体器件。 显示装置的栅极驱动器包括移位寄存器单元，解复用器电路和n个信号线。 通过将用于发送时钟信号的n条信号线连接到移位寄存器单元的一级，可以输出（n-3）个输出信号。 较大的n变得越小，用于传输不有助于输出的时钟信号的信号线的速率越小; 因此，与移动寄存器单元的一个级输出一个输出信号的常规结构相比，移位寄存器单元部分的面积较小。 因此，栅极驱动器电路可以具有窄的边框。

公开(公告)号：US09202825B2

公开(公告)日：2015-12-01

申请号：US14010841

申请日：2013-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake ,  Shunpei Yamazaki

IPC: H01L29/12 ,  H01L27/12 ,  G02F1/1362

Abstract: A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m−1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m−1)-th scan line.