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    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL
    42.
    发明公开
    METHOD FOR MANUFACTURING POSITIVE ELECTRODE ACTIVE MATERIAL 审中-公开

    公开(公告)号：US20230331556A1

    公开(公告)日：2023-10-19

    申请号：US18043102

    申请日：2021-08-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yumiko YONEDA ,  Kazutaka KURIKI

    IPC: C01B25/45

    CPC classification number: C01B25/45 ,  C01P2006/80 ,  C01P2006/40 ,  C01P2004/04 ,  C01P2002/70

    Abstract: A method for manufacturing a highly purified positive electrode active material is provided. Alternatively, a method for manufacturing a positive electrode active material whose crystal structure is not easily broken even when charge and discharge are repeated is provided. The method for manufacturing a positive electrode active material containing lithium and a transition metal includes a first step of preparing a lithium compound, a phosphorus compound, and water; a second step of forming a first mixture by mixing the lithium compound, the phosphorus compound, and the water; a third step of forming a second mixture by adding a first aqueous solution to the first mixture to adjust a pH; a fourth step of forming a third mixture by mixing an iron(II) compound with the second mixture; a fifth step of forming a fourth mixture by heating the third mixture; and a sixth step of obtaining a positive electrode active material by filtering, washing, and drying the fourth mixture. High-purity materials are used as the lithium compound, the phosphorus compound, the water, and the iron(II) compound.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    43.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230023720A1

    公开(公告)日：2023-01-26

    申请号：US17786271

    申请日：2020-12-15

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI

    IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    Abstract: A semiconductor device with a small variation in characteristics is provided. A semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and placed between the first conductor and the second conductor, a sixth insulator over the fifth insulator, and a third conductor over the sixth insulator. The third conductor includes a region overlapping the oxide. The fifth insulator includes a region in contact with the oxide, the first conductor, the second conductor, and each of the first insulator to the fourth insulator. The fifth insulator contains nitrogen, oxygen, and silicon.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    44.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220216341A1

    公开(公告)日：2022-07-07

    申请号：US17606830

    申请日：2020-04-27

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Tetsuya KAKEHATA ,  Shinya SASAGAWA

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/321 ,  H01L21/311

    Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. Included are a first oxide, a second oxide, a third oxide, and a fourth oxide over a first insulator; a first conductor over the third oxide; a second conductor over the fourth oxide; a second insulator over the first conductor; a third insulator over the second conductor; a fifth oxide positioned over the second oxide and between the third oxide and the fourth oxide; a sixth oxide over the fifth oxide; a fourth insulator over the sixth oxide; a third conductor over the fourth insulator; and a fifth insulator over the first insulator to the third insulator. The fifth oxide includes a region in contact with the second oxide to the fourth oxide and the first insulator. The sixth oxide includes a region in contact with the fifth oxide, the first conductor, and the second conductor. The fourth insulator includes a region in contact with at least the sixth oxide, the third conductor, and the fifth insulator.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    45.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220157986A1

    公开(公告)日：2022-05-19

    申请号：US17436136

    申请日：2020-03-18

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

    IPC: H01L29/786 ,  H01L27/108

    Abstract: A semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; first and second conductors and a third oxide over the second oxide; a second insulator over the first conductor; a third insulator over the second conductor; first and second layers; and fourth to sixth insulators. The sixth insulator includes a region in contact with a top surface of the first insulator. The first layer includes a region in contact with side surfaces of the first and second oxides, a side surface of the first conductor, and the top surface of the first insulator. The second layer includes a region in contact with the side surfaces of the first and second oxides, a side surface of the second conductor, and the top surface of the first insulator.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    46.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220157817A1

    公开(公告)日：2022-05-19

    申请号：US17439500

    申请日：2020-03-19

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Shunichi ITO ,  Erika TAKAHASHI ,  Tetsuya KAKEHATA

    IPC: H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

    Abstract: A semiconductor device with less variations in transistor characteristics is provided. A first insulator, first and second oxide films, a first conductive film, a first insulating film, and a second conductive film are deposited and processed to form a first and second oxides, a first conductive layer, a first insulating layer, and a second conductive layer. In the process, a layer is formed to cover the first and second oxides, the first conductive layer, the first insulating layer, and the second conductive layer. The second conductive layer and the layer are removed. A second insulating layer in contact with side surfaces of the first and second oxides, the first conductive layer, and the first insulating layer is formed, and a second insulator is formed thereover. An opening reaching the second oxide is formed in the first conductive layer, the first insulating layer, the second insulating layer, and the second insulator.

    IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
    47.
    发明申请
    IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20220102419A1

    公开(公告)日：2022-03-31

    申请号：US17275795

    申请日：2019-09-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Tetsuya KAKEHATA ,  Ryo TOKUMARU

    IPC: H01L27/146

    Abstract: An imaging device suitable for detecting infrared light is provided. The imaging device includes a first layer, a second layer, a third layer, and a fourth layer, which are stacked in this order. The first layer includes an infrared-light-transmitting filter. The second layer includes single crystal silicon. The third layer includes a device-formation layer. The fourth layer includes a support substrate. The second layer includes a photoelectric-conversion device whose light-absorption layer is the single crystal silicon. The third layer includes a transistor which includes a metal oxide in its channel formation region. The photoelectric-conversion device and the transistor are electrically connected. The photoelectric-conversion device receives light which has passed through the infrared-light-transmitting filter.

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