公开(公告)号：US20060178002A1

公开(公告)日：2006-08-10

申请号：US11223311

申请日：2005-09-09

申请人： Jae Kim ,  Sun Lee ,  Seung Lee

发明人： Jae Kim ,  Sun Lee ,  Seung Lee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/7685

摘要： Exemplary embodiments of the invention generally include methods for forming multilayer metal interconnect structures using dual damascene methods that incorporate a via capping process to protect lower interconnection lines from etching damage or oxidation, for example, that may be caused by inadvertent exposure of lower interconnection lines to etching atmospheres.

公开(公告)号：US20060169999A1

公开(公告)日：2006-08-03

申请号：US11319101

申请日：2005-12-28

申请人： Young Park ,  Seung Lee ,  Hun Hahm ,  Hyung Kim ,  Bum Kim ,  Young Jeong ,  Ho Ahn ,  Jung Park

发明人： Young Park ,  Seung Lee ,  Hun Hahm ,  Hyung Kim ,  Bum Kim ,  Young Jeong ,  Ho Ahn ,  Jung Park

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/60 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

摘要： The invention relates to an LED package frame and an LED package incorporating the same. The LED package frame comprises an LED chip; and a heat conductive member made of a lump of high heat conductivity material. The heat conductive member has a receiving part at a lateral portion, and is mounted with the LED chip. A lead is inserted at one end into the receiving part of the heat conductive member, and electrically connected to the LED chip. An electrically insulating layer is placed in tight contact between the lead and the receiving part of the heat conductive member to separate the lead from the receiving part. With the lead inserted into the heat conductive member, it is possible to reduce size while maintaining high heat conductivity and stability. Also, it is possible to provide an LED package frame and a high power LED package by fixing the lead fixed to the heat conductive member without a jig.

摘要翻译： 本发明涉及一种LED封装框架和一个包含该LED封装框架的LED封装件。 LED封装框架包括LED芯片; 以及由高导热性材料块制成的导热构件。 导热构件在侧部具有接收部，并且安装有LED芯片。 引线一端插入导热部件的接收部分，并与LED芯片电连接。 电绝缘层被放置在引导件和导热构件的接收部分之间的紧密接触中以将引线与接收部分分离。 通过将导线插入导热构件，可以在保持高导热性和稳定性的同时减小尺寸。 此外，通过将固定在导热构件上的引线固定而不用夹具，可以提供LED封装框架和大功率LED封装。

公开(公告)号：US20060141725A1

公开(公告)日：2006-06-29

申请号：US11129776

申请日：2005-05-16

申请人： Seung Lee ,  Sang Park

发明人： Seung Lee ,  Sang Park

IPC分类号： H01L21/336

CPC分类号： H01L29/7881 ,  H01L29/42324 ,  H01L29/66825

摘要： A method of manufacturing a flash memory device wherein before an insulating film spacer of a contact region is removed after a gate line and source/drain are formed, a high quality buffer oxide film formed between the gate line and the insulating film spacer is made dense by means of an annealing process. Abnormal oxidization is thus prevented from occurring due to an exposed metal layer in a gate when the insulating film spacer is removed as at least part of the buffer oxide remains after the spacer is removed.

摘要翻译： 一种制造闪存器件的方法，其中在形成栅极线和源极/漏极之后去除接触区域的绝缘膜间隔物之前，形成在栅极线和绝缘膜间隔物之间​​的高质量缓冲氧化膜被制成密集 通过退火工艺。 因此，当绝缘膜间隔物被去除时，防止在栅极中暴露的金属层发生异常氧化，因为至少部分缓冲氧化物在除去间隔物后残留。

公开(公告)号：US20060132727A1

公开(公告)日：2006-06-22

申请号：US11311335

申请日：2005-12-20

申请人： Nam Kim ,  Seung Lee ,  Han Cho ,  Ki Bok ,  Jun Lee ,  Soon Kwon

发明人： Nam Kim ,  Seung Lee ,  Han Cho ,  Ki Bok ,  Jun Lee ,  Soon Kwon

IPC分类号： G03B21/20

CPC分类号： H04N9/3141 ,  G02B13/16 ,  H04N5/7416 ,  H04N9/3111 ,  H04N9/317

摘要： A projection lens unit and a thin projector using the same are disclosed. The projection lens unit includes a plurality of lens sets for emitting light carrying an image, and a reflector arranged between adjacent ones of the lens sets or at a downstream end of the lens sets, and adapted to change a direction of light incident on the reflector.

公开(公告)号：US20060125670A1

公开(公告)日：2006-06-15

申请号：US11253181

申请日：2005-10-18

申请人： Min Cho ,  Seung Lee ,  Chong Kwon ,  Jong Kim

发明人： Min Cho ,  Seung Lee ,  Chong Kwon ,  Jong Kim

IPC分类号： H03M1/66

CPC分类号： H03M1/0863 ,  H03K17/04106 ,  H03M1/742

摘要： Provided are a current cell and digital-to-analog converter (DAC) using the same. The current cell includes a current source; a first transistor transmitting a current produced from the current source to a first output node based on a first signal; a second transistor transmitting a current produced from the current source to a second output node based on a second signal; a first capacitor coupled between a gate of the first transistor and the second output node; and a second capacitor coupled between a gate of the second transistor and the first output node. A current mode DAC can improve in dynamic performance by using a plurality of current cells each having the above-described configuration.

摘要翻译： 提供了使用其的当前单元和数模转换器（DAC）。 当前单元包括电流源; 第一晶体管，基于第一信号将从电流源产生的电流传输到第一输出节点; 基于第二信号将从电流源产生的电流传输到第二输出节点的第二晶体管; 耦合在所述第一晶体管的栅极和所述第二输出节点之间的第一电容器; 以及耦合在所述第二晶体管的栅极和所述第一输出节点之间的第二电容器。 电流模式DAC可以通过使用具有上述配置的多个当前单元来改善动态性能。

公开(公告)号：US20060121667A1

公开(公告)日：2006-06-08

申请号：US11283012

申请日：2005-11-18

申请人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

发明人： Hyun Bae ,  Seung Lee ,  Sang Kim ,  Jin Kang

IPC分类号： H01L21/8238

CPC分类号： H01L21/8249

摘要： Provided is a method of fabricating a silicon germanium (SiGe) Bi-CMOS device. In the fabrication method, the source and drain of the CMOS device is formed using a silicon germanium (SiGe) heterojunction, instead of silicon, thereby preventing a leakage current resulting from a parasitic bipolar operation. Further, since the source and drain is connected with an external interconnection through the nickel (Ni) silicide layer, the contact resistance is reduced, thereby preventing loss of a necessary voltage for a device operation and accordingly, making it possible to enable a low voltage and low power operation and securing a broad operation region even in a low voltage operation of an analogue circuit.

摘要翻译： 提供一种制造硅锗（SiGe）Bi-CMOS器件的方法。 在制造方法中，使用硅锗（SiGe）异质结代替硅形成CMOS器件的源极和漏极，从而防止由寄生双极性操作引起的漏电流。 此外，由于源极和漏极通过镍（Ni）硅化物层与外部互连件连接，所以接触电阻降低，从而防止器件操作所需的电压的损失，并因此使得能够实现低电压 并且即使在模拟电路的低电压操作下也能实现低功率操作并确保宽的操作区域。

公开(公告)号：US20060073661A1

公开(公告)日：2006-04-06

申请号：US11016436

申请日：2004-12-17

申请人： Seung Lee

发明人： Seung Lee

IPC分类号： H01L21/76

CPC分类号： H01L27/11568 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546

摘要： Disclosed herein are methods for forming wall oxide films in flash memory devices and methods for forming isolation films. After trenches are formed in the substrate, an ISSG (In-Situ Steam Generation) oxidization process is performed to form wall oxide films on sidewalls of the trenches. This process prohibits formation of facets at the top and bottom edge portions of the trenches. Thus, the top edges of the trenches are rounded. Furthermore, the ISSG oxidization process is performed at a low temperature for a relatively short time. Therefore, thermal stress due to carrying out an oxidization process for a long time is reduced and a dislocation phenomenon is thus prevented from occurring.

摘要翻译： 本文公开了在快闪存储器件中形成壁氧化膜的方法和用于形成隔离膜的方法。 在衬底中形成沟槽之后，进行ISSG（原位蒸汽生成）氧化处理以在沟槽的侧壁上形成壁氧化物膜。 该过程禁止在沟槽的顶部和底部边缘部分形成小面。 因此，沟槽的顶部边缘是圆形的。 此外，ISSG氧化过程在较短的时间内在低温下进行。 因此，长时间进行氧化处理引起的热应力降低，从而防止发生位错现象。

公开(公告)号：US20060039255A1

公开(公告)日：2006-02-23

申请号：US11205101

申请日：2005-08-17

申请人： Kang Seo ,  Jea Yoo ,  Byung Kim ,  Seung Lee

发明人： Kang Seo ,  Jea Yoo ,  Byung Kim ,  Seung Lee

IPC分类号： G11B19/02 ,  G11B7/24

CPC分类号： G11B27/11 ,  G11B20/1217 ,  G11B27/322 ,  G11B2020/1288 ,  G11B2220/2541

摘要： A method and apparatus for reproducing data is disclosed. The method and apparatus configures a composite file structure to simultaneously reproduce data recorded in a recording medium and other data recorded in a local storage, and reproduces data using the configured composite file structure. A variety of methods for configuring the composite file structure are described in preferred embodiments, such that a method for effectively configuring the composite file structure regardless of a current condition state is given. Therefore, data recorded in the recording medium and other data stored in the local storage can be effectively used.

公开(公告)号：US20050274974A1

公开(公告)日：2005-12-15

申请号：US11148291

申请日：2005-06-09

申请人： Geun Kim ,  Seung Lee

发明人： Geun Kim ,  Seung Lee

IPC分类号： H01L21/328 ,  H01L21/329 ,  H01L29/30 ,  H01L29/866 ,  H01L33/00

CPC分类号： H01L29/66106 ,  H01L21/2251 ,  H01L29/866

摘要： The present invention is directed to a Zener diode and a method for fabricating the same. According to the present invention, a voltage regulator device can be fabricated by carrying out a diffusion process without using a diffusion mask. Further, a PNP (or NPN) Zener diode having a bidirectional threshold voltage characteristic or a PN Zener diode can be fabricated without any photolithographic process or using the minimum number of processes. Therefore, the number of processing steps can be reduced and the yield thereof can be increased.

摘要翻译： 本发明涉及齐纳二极管及其制造方法。 根据本发明，可以通过在不使用扩散掩模的情况下进行扩散处理来制造电压调节器装置。 此外，可以制造具有双向阈值电压特性的PNP（或NPN）齐纳二极管或PN齐纳二极管，而无需任何光刻工艺或使用最少数量的工艺。 因此，可以减少处理步骤的数量并且可以提高其收率。

公开(公告)号：US20050264764A1

公开(公告)日：2005-12-01

申请号：US10776198

申请日：2004-02-12

申请人： Seung Lee

发明人： Seung Lee

IPC分类号： G02B5/04 ,  G02B19/00 ,  G03B21/00 ,  G03B21/14 ,  H04N3/08 ,  H04N9/31

CPC分类号： H04N9/3114 ,  H04N9/315

摘要： Disclosed is a projecting optical system for increasing a height of all optical system, the system including a lamp for irradiating light, a color divider for dividing colors of light irradiated from the lamp, a illumination mixer for irradiating the light with equal light intensity, a channel-changing prism for changing a channel of light irradiated from the illumination mixer to upward and downward, and a TIR prism for changing a direction and angle of light to a predetermined direction and angle.

摘要翻译： 公开了一种用于增加所有光学系统的高度的投影光学系统，该系统包括用于照射光的灯，用于分离从灯照射的光的颜色的分色器，用于以相等的光强度照射光的照明混合器， 用于将从照明混合器照射的光的通道改变为向上和向下的通道改变棱镜，以及用于将光的方向和角度改变到预定方向和角度的TIR棱镜。