摘要:
There is disclosed a thinner-layered radio wave absorber having high absorption performance for a high frequency electromagnetic wave. The radio wave absorber, even when having a magnetic layer of not more than 1 mm in thickness, achieves satisfactory absorption characteristics for the high frequency electromagnetic wave by adopting a structure that a conductor is fixedly attached to a face opposite to an electromagnetic-wave incident face of the magnetic layer of single-layered structure, and also arranging the magnetic layer to have values of a real part &mgr;′ and an imaginary part &mgr;″ of complex relative magnetic permeability of the magnetic layer satisfying an expression of &mgr;″≧m&mgr;′−n (m: real number of m>0, n: real number of n≧0) outside an impedance mismatching region.
摘要:
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要:
A magnetic device, comprises a first magnetic layer; a second magnetic layer on the magnetic layer and having a coercive force smaller than that of the first magnetic layer; a semiconductor layer between the first and second magnetic layers so that photo-induced magnetism occurs between the first and second magnetic layers when the semiconductor layer is irradiated with light, a third magnetic layer on the second magnetic layer, the third magnetic layer having a coercive force larger than the coercive force of the second magnetic layer, and a second semiconductor layer between the second and third magnetic layers, magnetism being induced between the second and third magnetic layers when the second semiconductor layer is irradiated with light.
摘要:
A torque detecting apparatus utilizing a magnetoelastic effect comprising one or more pairs of thin magnetic metal strips affixed to a torque-transmitting shaft subjected to torque detection and having magnetic anisotropy induced in a predetermined direction, and one or more pairs of detecting cores paired with the above one or more pairs of thin magnetic metal strips, fixed in contact with the thin magnetic metal strips, each of the cores of the one or more pairs of detecting cores having a detecting coil wound therearound, In one embodiment, the torque detecting apparatus utilizes a magnetoelastic effect of thin magnetic metal strip wherein the absolute value of saturated magnetostriction constant .lambda.s of the thin magnetic metal strip is less than 1.times.10.sup.-6.
摘要:
There is disclosed an amorphous alloy for a magnetic core material represented by the formula(Co.sub.1-x.sbsb.1.sub.-x.sbsb.2 Fe.sub.x.sbsb.1 M.sub.x.sbsb.2).sub.x.sbsb.3 B.sub.x.sbsb.4 Si.sub.100-x.sbsb.3.sub.-x.sbsb.4wherein M is at least one element selected from the group consisting of Ti, V, Cr, Mn, Ni, Zr, Nb, Mo, Ru, Hf, Ta, W and Re, and x.sub.1, x.sub.2, x.sub.3 and x.sub.4 are numbers which satisfy relations of 0.ltoreq.x.sub.1 .ltoreq.0.10, 0.ltoreq.x.sub.2 .ltoreq.0.10, 70.ltoreq.x.sub.3 .ltoreq.79 and 5.ltoreq.x.sub.4 .ltoreq.9, respectively.According to the present invention, it could be provided an amorphous alloy suitable for a magnetic core material of a magnetic amplifier in which its coercive force is as low as 0.4 oersted or less at a high frequency of 20 KHz or more, particularly even at 50 KHz, and its rectangular ratio is as much as 85% or more.
摘要:
A method for manufacturing a multi-layer amorphous alloy having at least one layer of amorphous alloy, comprises the steps of ejecting a first molten metal on one of a pair of rollers rotating at a high speed, and rotating the ejected metal with the roller in a shape of a layer for rapid cooling; forming two molten metal layers on the rotating roller or belt by ejecting a second molten metal different from the first metal on the first molten metal for rapid cooling; and adhering under pressure and rolling the molten metal layers between the pair of rollers; and the method of the present invention is applicable to the manufacture of multi-layer alloys which may be used as various composite alloy materials such as high-sensitivity bimetals, superconductive wires, contact spring composite alloys, latching relays having two-stepped magnetic hysteresis, and high fidelty magnetic heads.
摘要:
A rolled core is formed by winding a thin body of an amorphous magnetic alloy having positive magnetostriction characteristics so that, of the two surfaces the surface of smaller surface coarseness faces inward. This rolled core is improved in iron loss over a rolled core obtained by winding the thin body so that the surface of greater surface coarseness faces inward. Breakage of the thin body tends to occur less frequently when it is wound so that the surface faces inward.
摘要:
For the present ferromagnetic tunnel junction structure, employed is a means characterized by using an MgO barrier and using a Co2FeAl full-Heusler alloy for any of the ferromagnetic layers therein. The ferromagnetic tunnel junction structure is characterized in that Co2FeAl includes especially a B2 structure and one of the ferromagnetic layers is formed on a Cr buffer layer. The magnetoresistive element is characterized in that the ferromagnetic tunnel junction structure therein is any of the above-mentioned ferromagnetic tunnel junction structure. Accordingly, a large TMR, especially a TMR over 100% at room temperature can be attained, using Co2FeAl having a smallest α though not a half-metal.
摘要:
A method for producing a magnetic particle forming a magnetic material for absorbing electromagnetic waves comprises the steps of mixing an organometallic complex or a metal salt with a chain polymer and dissolving the mixture in a solvent (step S1); raising the temperature of the mixture to reaction temperature (step S2), carrying out a reaction at the reaction temperature (step S3); and forming the magnetic particle having a structure that the periphery of each fine particle formed from the organometallic complex or the metal salt is surrounded by the chain polymer and recovering the formed magnetic particle after the reaction (step S4). The magnetic particle has a nanogranular structure to become a magnetic material for absorbing electromagnetic waves. Such a magnetic particle is produced by a wet reaction. Thus, a larger amount of magnetic particle can be produced by one reaction.
摘要:
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.