公开(公告)号：US5576222A

公开(公告)日：1996-11-19

申请号：US324737

申请日：1994-10-18

申请人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

发明人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

IPC分类号： H01L31/20 ,  H01L27/14 ,  H01L21/336 ,  H01L21/71 ,  H01L27/01

CPC分类号： H01L31/20 ,  Y02E10/50

摘要： An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

摘要翻译： 图像传感器（10）具有基板（1），具有放置在所述基板（1）上的源极区域和漏极区域的有源层（3'），放置在所述有源层上的栅极绝缘层（4'）， 和栅极绝缘层（4'）上的栅电极层（5'）。 有源层（3'）通过以下步骤制造：通过低压CVD法使用乙硅烷气体（Si 2 H 6）生成非晶硅层，并且在500-650℃下在氮气中退火所述层4-50小时 大气层。 栅极绝缘层（4'）通过在900〜-1100℃的高温下氧化活性层的表面而产生。高温下的氧化过程改善了退火过程并改善了活性层。 因此，获得具有均匀特性的图像传感器，具有提高的生产率。

公开(公告)号：US5432279A

公开(公告)日：1995-07-11

申请号：US55788

申请日：1993-05-03

申请人： Naoya Sakamoto ,  Hiroaki Tan ,  Eiichirou Hata ,  Noriaki Kihara

发明人： Naoya Sakamoto ,  Hiroaki Tan ,  Eiichirou Hata ,  Noriaki Kihara

IPC分类号： C07D519/04

CPC分类号： C07D519/04

摘要： The present invention relates to a process for the preparation, from e.g. anhydrovinblastine, of binary indole alkaloids effective as an anti-cancer drug, such as vinblastine, leurosidine, etc., wherein a trivalent iron source and hydride source are added in the presence of oxygen, thereby increasing a yield of an object compound. The yield of an object compound is improved still more by further addition, to the reaction system, of an oxalic acid ion source, malonic acid ion source, inorganic anion source, amino acid, etc.

摘要翻译： 本发明涉及一种制备方法。 二氢吲哚生物碱作为抗癌药物，如长春碱，左旋嘧啶等，其中在氧气存在下加入三价铁源和氢化物源，从而提高目标化合物的产率。 通过进一步添加草酸离子源，丙二酸离子源，无机阴离子源，氨基酸等的反应体系，目标化合物的产率进一步提高。

公开(公告)号：US5371285A

公开(公告)日：1994-12-06

申请号：US38283

申请日：1993-03-29

申请人： Masahiro Kondo ,  Michio Tanaka ,  Naoya Sakamoto ,  Hajime Ooyoshi

发明人： Masahiro Kondo ,  Michio Tanaka ,  Naoya Sakamoto ,  Hajime Ooyoshi

IPC分类号： C07C227/02 ,  C07C229/00

CPC分类号： C07C227/02

摘要： In a method of producing a keto acid having the general formula ##STR1## wherein R.sup.1 and R.sup.2 independently represent an alkyl of 1-6 carbons or a cycloalkyl of 4-8 carbons, by reacting an m-aminophenol having the general formula ##STR2## wherein R.sup.1 and R.sup.2 are the same as above, with phthalic anhydride, in an organic solvent, the improvement comprising effecting the reaction in an amount of the organic solvent which is insufficient to dissolve the keto acid produced in the reaction, so that at least a portion of the resultant keto acid crystallizes out of the solvent and allowing the reaction to proceed in a heterogeneous system.

摘要翻译： 在制备具有通式“IMAGE”的酮酸的方法中，其中R1和R2独立地表示1-6个碳原子的烷基或4-8个碳的环烷基，通过使通式为“IMAGE”的间氨基苯酚， 其中R1和R2与上述相同，在邻苯二甲酸酐中，在有机溶剂中，其改进包括使一定量的有机溶剂的反应不足以溶解在反应中产生的酮酸，使得至少一种 所得酮酸的一部分从溶剂中结晶并使反应在异相体系中进行。

公开(公告)号：US5298455A

公开(公告)日：1994-03-29

申请号：US825552

申请日：1992-01-27

申请人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

发明人： Michio Arai ,  Masaaki Ikeda ,  Kazushi Sugiura ,  Nobuo Furukawa ,  Mitsufumi Kodama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada ,  Masaaki Hiroki ,  Ichirou Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L31/105 ,  H04N1/031 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L29/78675 ,  H01L31/1055 ,  H04N1/0313 ,  H04N1/0316 ,  Y10S257/905

摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.

摘要翻译： 在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。 所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍和4倍之间的范围内，所述平均直径为250（Aangstroem）-8000（Aangstroem），所述膜厚度为500（Aangstroem） -2000（Aangstroem）。 半导体膜（2'）中的氧的密度小于2×1019 / cm3。 具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。 通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。 由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。 由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

公开(公告)号：US06410960B1

公开(公告)日：2002-06-25

申请号：US09226215

申请日：1999-01-07

申请人： Michio Arai ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Katsuto Nagano

发明人： Michio Arai ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Katsuto Nagano

IPC分类号： H01C2900

CPC分类号： H01L29/66757 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19103 ,  H01L2924/19105 ,  Y10S438/938 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

摘要翻译： 混合（复合）集成电路元件包括基板，通过薄膜工艺在基板上形成的薄膜型集成电路，以及形成在其上的诸如电容器，电感器，电阻及其组合的层叠型无源电路元件 集成电路。 在氢气氛中对无源电路元件进行烧制时，构成集成电路的半导体层也被热退火。 可以使用各种基板作为基板，例如石英，陶瓷和廉价的半导体基板，其尚未通过使用玻璃层进行镜面研磨处理。

公开(公告)号：US5952450A

公开(公告)日：1999-09-14

申请号：US127075

申请日：1998-07-31

申请人： Jiro Ishihara ,  Hiroki Kuyama ,  Eiichi Ozeki ,  Takeshi Ishitoku ,  Masahide Tanaka ,  Naoya Sakamoto

发明人： Jiro Ishihara ,  Hiroki Kuyama ,  Eiichi Ozeki ,  Takeshi Ishitoku ,  Masahide Tanaka ,  Naoya Sakamoto

IPC分类号： C08G64/02 ,  C08G64/22 ,  C08G64/30 ,  C08G64/00

CPC分类号： C08G64/0216 ,  C08G64/226 ,  C08G64/305

摘要： A crosslinked polycarbonate is obtained by polycondensation of diol (A), trivalent or more polyhydric alcohol (B) whose arbitrary two hydroxy groups are not in the positional relationship of 1,2-disubstitution or 1,3-disubstitution, and carbonyl component (C) such as carbonic acid diesters. In the polycondensation step, no side reaction does not occur.This crosslinked polycarbonate is used as a modifier for polylactic acids. The brittleness of the polylactic acid is improved while maintaining mechanical strength, thermostability, and transparency.

摘要翻译： 交联聚碳酸酯通过二醇（A），任意两个羟基不具有1,2-取代或1,3-取代的位置关系的三价以上的多元醇（B）和羰基成分（C ）如碳酸二酯。 在缩聚步骤中，不会发生副反应。 该交联聚碳酸酯用作聚乳酸的改性剂。 改善聚乳酸的脆性，同时保持机械强度，热稳定性和透明度。

公开(公告)号：US5283205A

公开(公告)日：1994-02-01

申请号：US852977

申请日：1992-03-17

申请人： Naoya Sakamoto

发明人： Naoya Sakamoto

IPC分类号： H01L21/68 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544 ,  H01R21/22

CPC分类号： G03F9/7084 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/102 ,  Y10S438/942 ,  Y10S438/975

摘要： A method for manufacturing a semiconductor device which allows to form a semiconductor device on an insulating amorphous material or an insulating crystallized glass in high precision alignment is provided.The present invention is characterized in that alignment markers of masks are formed along a direction in which a degree of expansion-contraction of a substrate is smaller when the semiconductor device is fabricated by laminating thin films having patterns on the substrate.

摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件能够以高精度对准在绝缘非晶态材料或绝缘结晶玻璃上形成半导体器件。 本发明的特征在于，当通过在基板上层叠具有图案的薄膜制造半导体器件时，沿着基板的伸缩缩小程度的方向形成掩模的对准标记。

公开(公告)号：US5014100A

公开(公告)日：1991-05-07

申请号：US285419

申请日：1988-12-16

申请人： Takeshi Fukada ,  Mitsufumi Codama ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Ichiro Takayama

发明人： Takeshi Fukada ,  Mitsufumi Codama ,  Mitsunori Sakama ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Ichiro Takayama

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14665 ,  H04N1/0313

摘要： A contact image sensor for use in facsimile machines is described. A light window is opened through a photosensitive semiconductor film deposited on a glass sustrate. Light rays are passed through the light window, reflected on an original and absorbed by the semiconductor film in order to produce image signals containing visual information of the original. Provided on the light incident side of the semiconductor film is a light blocking electrode which prevents incident light rays from directly entering the semiconductor film therethrough without reflection on the original. The opposing electrode formed on the other side of the semiconductor film is made of a transparent film covering the side surface of the light window. The opposing electrode on the side surface functions to eliminate noise signals caused by undesirable light rays incident through the side surface, which otherwise, would deteriorate the output signals of the image sensor.

公开(公告)号：US09577209B2

公开(公告)日：2017-02-21

申请号：US13367833

申请日：2012-02-07

申请人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

发明人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC分类号： H01L51/5212 ,  H01L27/3279 ,  H01L51/5228 ,  H01L2251/5361

摘要： The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

摘要翻译： 本发明的重点是在基板侧设置用于提高上部电极的导电性的辅助布线的结构。 发光装置的导电性辅助布线设置在基板上，辅助配线的上部沿与基板平行的方向突出。 此外，在包括下电极层和辅助布线的区域中形成的EL层在物理上被辅助布线分开。 以类似于下电极层的方式形成的上电极层可以电连接到辅助布线的侧表面的至少一部分。 这种辅助布线可以用在照明装置和显示装置中。

公开(公告)号：US06479334B1

公开(公告)日：2002-11-12

申请号：US09444405

申请日：1999-11-22

申请人： Mitsufumi Codama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada

发明人： Mitsufumi Codama ,  Yukio Yamauchi ,  Naoya Sakamoto ,  Takeshi Fukada

IPC分类号： H01L2100

CPC分类号： H01L29/78603 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1218

摘要： A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.

摘要翻译： 薄膜晶体管和半导体器件及其形成方法。 将形成在绝缘基板上的硅薄膜在550〜800℃下加热，使其具有结晶性，利用所得到的结晶硅膜形成薄膜晶体管。 绝缘基板的热收缩在加热过程中设定在30〜500ppm的范围内，使得薄膜晶体管具有高迁移率，低阈值电压和高截止电阻。 在薄膜晶体管制造工艺中的图案化处理之后，在加热过程中绝缘基板的热收缩也可以设定为100ppm以下。