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公开(公告)号：US09863754B2
公开(公告)日：2018-01-09
申请号：US14486514
申请日：2014-09-15
Inventor： Wei-Hsiang Tseng , Chin-Hsiang Lin , Heng-Hsin Liu , Jui-Chun Peng , Ho-Ping Cheng
IPC: G01B11/00 , G01B11/02 , G03F9/00 , H01L23/544
CPC classification number: G01B11/02 , G03F9/7011 , G03F9/7084 , H01L23/544 , H01L2924/0002 , H01L2924/00
Abstract: A wafer alignment apparatus includes a light source, a light detection device, and a rotation device configured to rotate a wafer. The light source is configured to provide light directed to the wafer. The light detection device is configured to detect reflected light intensity from the wafer to locate at least one wafer alignment mark of wafer alignment marks separated by a plurality of angles. At least two of those angles are equal.
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公开(公告)号：US20160240443A1
公开(公告)日：2016-08-18
申请号：US14804186
申请日：2015-07-20
Inventor： Yung-Yao Lee , Heng-Hsin Liu , Yi-Ping Hsieh , Ying Ying Wang
CPC classification number: G03F7/70633 , G01N21/9501 , G03F9/7003 , G06F17/5081 , H01L22/12 , H01L22/20
Abstract: An overlay measurement and correction method and device is provided. In an embodiment the measurement device takes measurements of a first semiconductor wafer and uses the measurements in a plurality of correction techniques to generate an overlay correction model. The plurality of correction techniques include a first order correction, a first intra-field high order parameter correction and a first inter-field high order parameter correction. The model is used to adjust the exposure parameters for the exposure of the next semiconductor wafer. The process is repeated on each semiconductor wafer for a run-to-run analysis.
Abstract translation: 提供覆盖测量和校正方法和装置。 在一个实施例中，测量装置对第一半导体晶片进行测量，并使用多个校正技术中的测量来生成覆盖校正模型。 多个校正技术包括一阶校正，第一场内高阶参数校正和第一场间高阶参数校正。 该模型用于调整下一个半导体晶片曝光的曝光参数。 在每个半导体晶片上重复该过程以进行运行分析。
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公开(公告)号：US20250164900A1
公开(公告)日：2025-05-22
申请号：US19032570
申请日：2025-01-21
Inventor： Tzu-Jung Pan , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/00
Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.
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公开(公告)号：US20250164899A1
公开(公告)日：2025-05-22
申请号：US18512612
申请日：2023-11-17
Inventor： Zheng-Hao Zhang , Hsin-Yi Tseng , Chueh-Chi Kuo , Li-Jui Chen , Heng-Hsin Liu
IPC: G03F7/00 , H01L21/677
Abstract: A load-lock chamber with reduced particle contamination is disclosed. At least one movable particle shield is placed between the gate valve and a wafer location. Particles which can be generated due to contact between the gate valve door and its seat are blocked or inhibited by the particle shield from landing in the wafer location, reducing particle contamination. Methods for operating the load-lock chamber are also disclosed.
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公开(公告)号：US12228863B2
公开(公告)日：2025-02-18
申请号：US18133948
申请日：2023-04-12
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Heng-Hsin Liu , Li-Jui Chen , Shang-Chieh Chien
IPC: G03F7/00
Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.
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Patent Agency Ranking
公开(公告)号：US12061423B2
公开(公告)日：2024-08-13
申请号：US17488131
申请日：2021-09-28
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
IPC: G03F7/00
CPC classification number: G03F7/70916 , G03F7/70033 , G03F7/70875
Abstract: Microwave heating of debris collecting vanes within the source vessel of a lithography apparatus is used to accomplish uniform temperature distribution in order to reduce fall-on contamination and formation of clogs on the inner and outer surfaces of the vanes.
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公开(公告)号：US11966170B2
公开(公告)日：2024-04-23
申请号：US17081800
申请日：2020-10-27
Inventor： Ai-Jen Hung , Yung-Yao Lee , Heng-Hsin Liu , Chin-Chen Wang , Ying Ying Wang
CPC classification number: G03F7/70633 , G03F7/70775 , G03F7/70783 , G03F9/7003 , G03F9/7046 , G03F9/7073 , G03F9/7088 , H01L21/682
Abstract: A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.
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公开(公告)号：US20230359125A1
公开(公告)日：2023-11-09
申请号：US18223496
申请日：2023-07-18
Inventor： Che-Chang HSU , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033 , H05G2/008 , H05G2/006 , G21K1/06 , G06T7/0004 , G06T1/0014 , H05G2/005 , G06T2207/30148
Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.
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公开(公告)号：US11809087B2
公开(公告)日：2023-11-07
申请号：US17446252
申请日：2021-08-27
Inventor： Kai-Chieh Chang , Kai-Fa Ho , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70358 , G03F7/70433 , G03F7/70525
Abstract: Some implementations described herein provide an exposure tool and associated methods of operation in which a scanner control system generates a scanner route for an exposure recipe such that the distance traveled by a substrate stage of the exposure tool along the scanner route is reduced and/or optimized for non-exposure fields on a semiconductor substrate. In this way, the scanner control system increases the productivity of the exposure tool, reduces processing times of the exposure tool, and increases yield in a semiconductor fabrication facility in which the exposure tool is included.
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公开(公告)号：US11602037B1
公开(公告)日：2023-03-07
申请号：US17460108
申请日：2021-08-27
Inventor： Yu-Huan Chen , Yu-Chih Huang , Ming-Hsun Tsai , Shang-Chieh Chien , Heng-Hsin Liu
IPC: H05G2/00
Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. In some embodiments, a nozzle tube is arranged within the nozzle of the droplet generator, and the nozzle tube includes a structured nozzle pattern configured to provide an angular momentum to the target droplets.
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