公开(公告)号：US20200168383A1

公开(公告)日：2020-05-28

申请号：US16069347

申请日：2018-02-22

Applicant: TDK CORPORATION

Inventor： Tohru OIKAWA ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Tatsuo SHIBATA

IPC: H01F10/32 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

公开(公告)号：US20200098412A1

公开(公告)日：2020-03-26

申请号：US16577067

申请日：2019-09-20

Applicant: TDK CORPORATION

Inventor： Tatsuo SHIBATA

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22

Abstract: A memristor circuit that can increase a maximum rate of change of a conductance of the memristor circuit while maintaining linearity and symmetry in the change in the conductance is provided. A memristor circuit includes: a first magnetoresistance effect element including a first resistance change unit configured to change a resistance value thereof based on a current flowing therein, a first electrode provided at a first end of the first resistance change unit, and a second electrode provided at a second end of the first resistance change unit; and a first field effect transistor including a gate electrode, the gate electrode being connected to a transmission path between the first electrode connected to a power supply and the power supply.

公开(公告)号：US20200052194A1

公开(公告)日：2020-02-13

申请号：US16587178

申请日：2019-09-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11B5/39 ,  H01L45/00 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20190258457A1

公开(公告)日：2019-08-22

申请号：US16224899

申请日：2018-12-19

Applicant: TDK CORPORATION

Inventor： Jiro YOSHINARI ,  Tatsuo SHIBATA

IPC: G06F7/58 ,  H01L43/02 ,  H01L43/10

Abstract: A random number generator includes a random number generation unit having a first ferromagnetic layer and a nonmagnetic insulating layer laminated on one surface of the first ferromagnetic layer, a voltage application unit which is connected in the lamination direction of the first ferromagnetic layer and the insulating layer and is configured to apply a voltage in the lamination direction of the first ferromagnetic layer and the insulating layer, and a control unit which is connected to the voltage application unit and is configured to determine a time for which a voltage is applied to the first ferromagnetic layer depending on the direction of magnetization of the first ferromagnetic layer precessing by applying the voltage.

公开(公告)号：US20180159026A1

公开(公告)日：2018-06-07

申请号：US15827852

申请日：2017-11-30

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA ,  Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10

Abstract: A spin current magnetization rotational element includes: a magnetization free layer including a synthetic structure consisting of a first ferromagnetic metal layer, a second ferromagnetic metal layer and a first non-magnetic layer sandwiched by the first ferromagnetic metal layer and the second ferromagnetic metal layer; and an antiferromagnetic spin-orbit torque wiring that extends in a second direction intersecting with a first direction that is a lamination direction of the synthetic structure and is joined to the first ferromagnetic metal layer, wherein the spin current magnetization rotational element is configured to change a magnetization direction of the magnetization free layer by applying current to the antiferromagnetic spin-orbit torque wiring.

公开(公告)号：US20180083186A1

公开(公告)日：2018-03-22

申请号：US15559195

申请日：2016-03-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Katsuyuki NAKADA ,  Yoshitomo TANAKA

IPC: H01L43/08 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12

CPC classification number: H01L43/08 ,  G11B5/39 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L45/147

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure in which cations are disordered, and contains a divalent cation of a non-magnetic element, a trivalent cation of a non-magnetic element, oxygen, and one of nitrogen and fluorine.

公开(公告)号：US20250061322A1

公开(公告)日：2025-02-20

申请号：US18891694

申请日：2024-09-20

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: G06N3/065 ,  G11C11/16 ,  G11C11/54 ,  H10B61/00 ,  H10N50/80

Abstract: A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.

公开(公告)号：US20240396545A1

公开(公告)日：2024-11-28

申请号：US18572341

申请日：2021-06-21

Applicant: TDK CORPORATION

Inventor： Yuji KAKINUMA ,  Tatsuo SHIBATA

IPC: H03K17/56

Abstract: A drive circuit including: a load resistor; a variable resistance element configured to have at least a first terminal and a second terminal and be capable of changing a resistance value; and a constant current source configured to determine a magnitude of a current flowing through the load resistor based on an input voltage and a resistance value of the variable resistance element, in which a voltage across the load resistor is output as an output voltage.

公开(公告)号：US20240138267A1

公开(公告)日：2024-04-25

申请号：US18271550

申请日：2021-03-02

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10N50/20 ,  H10B61/22 ,  H10N50/01 ,  H10N50/80

Abstract: A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

公开(公告)号：US20240074323A1

公开(公告)日：2024-02-29

申请号：US18270114

申请日：2021-01-12

Applicant: TDK CORPORATION

Inventor： Shogo YAMADA ,  Tatsuo SHIBATA

IPC: H10N50/10 ,  G11C11/16 ,  G11C19/08 ,  H10B61/00

CPC classification number: H10N50/10 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H10B61/22

Abstract: A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.