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    PHOTODIODE GATE DIELECTRIC PROTECTION LAYER
    41.
    发明申请
    PHOTODIODE GATE DIELECTRIC PROTECTION LAYER 有权
    光电栅介质保护层

    公开(公告)号：US20150028402A1

    公开(公告)日：2015-01-29

    申请号：US13948217

    申请日：2013-07-23

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Wen-I Hsu ,  Tsun-Kai Tsao ,  Chih-Yu Lai ,  Jiech-Fun Lu ,  Yeur-Luen Tu

    IPC: H01L27/146 ,  H01L31/18

    CPC classification number: H01L27/14614 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

    Abstract: The present disclosure relates to a method the present disclosure relates to an active pixel sensor having a gate dielectric protection layer that reduces damage to an underlying gate dielectric layer during fabrication, and an associated method of formation. In some embodiments, the active pixel sensor has a photodetector disposed within a semiconductor substrate. A transfer transistor having a first gate structure is located on a first gate dielectric layer disposed above the semiconductor substrate. A reset transistor having a second gate structure is located on the first gate dielectric layer. A gate dielectric protection layer is disposed onto the gate oxide at a position extending between the first gate structure and the second gate structure and over the photodetector. The gate dielectric protection layer protects the first gate dielectric layer from etching procedures during fabrication of the active pixel sensor.

    Abstract translation: 本公开涉及一种方法，本公开涉及一种有源像素传感器，其具有栅极介电保护层，其在制造期间减小对下面的栅极介电层的损坏，以及相关联的形成方法。 在一些实施例中，有源像素传感器具有设置在半导体衬底内的光电检测器。 具有第一栅极结构的转移晶体管位于设置在半导体衬底之上的第一栅极电介质层上。 具有第二栅极结构的复位晶体管位于第一栅极介电层上。 在第一栅极结构和第二栅极结构之间并且在光电检测器上方的位置处，在栅极氧化物上设置栅极介电保护层。 栅极介质保护层在制造有源像素传感器期间保护第一栅极介电层免受蚀刻过程。

    Dielectric structure overlying image sensor element to increase quantum efficiency
    43.
    发明授权
    Dielectric structure overlying image sensor element to increase quantum efficiency 有权

    公开(公告)号：US12176372B2

    公开(公告)日：2024-12-24

    申请号：US17197291

    申请日：2021-03-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Ming-Che Lee

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.

    3DIC structure and methods of forming
    45.
    发明授权
    3DIC structure and methods of forming 有权

    公开(公告)号：US11984431B2

    公开(公告)日：2024-05-14

    申请号：US18156848

    申请日：2023-01-19

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Kuo-Ming Wu ,  Yung-Lung Lin ,  Zhi-Yang Wang ,  Sheng-Chau Chen ,  Cheng-Hsien Chou

    IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

    CPC classification number: H01L25/0657 ,  H01L24/02 ,  H01L24/06 ,  H01L25/50

    Abstract: A structure and a method of forming are provided. The structure includes a first dielectric layer overlying a first substrate. A first connection pad is disposed in a top surface of the first dielectric layer and contacts a first redistribution line. A first dummy pad is disposed in the top surface of the first dielectric layer, the first dummy pad contacting the first redistribution line. A second dielectric layer overlies a second substrate. A second connection pad and a second dummy pad are disposed in the top surface of the second dielectric layer, the second connection pad bonded to the first connection pad, and the first dummy pad positioned in a manner that is offset from the second dummy pad so that the first dummy pad and the second dummy pad do not contact each other.

    Image sensor with dual trench isolation structure
    46.
    发明授权
    Image sensor with dual trench isolation structure 有权

    公开(公告)号：US11705360B2

    公开(公告)日：2023-07-18

    申请号：US17197330

    申请日：2021-03-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng-Hsien Chou ,  Sheng-Chau Chen ,  Tzu-Jui Wang ,  Sheng-Chan Li

    IPC: H01L21/762 ,  H01L27/146

    CPC classification number: H01L21/76224 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685

    Abstract: In some embodiments, the present disclosure relates to an image sensor. The image sensor comprises a substrate. A photodetector is in the substrate and includes a semiconductor guard ring extending into a first side of the substrate. A shallow trench isolation (STI) structure extends into the first side of the substrate. An outer isolation structure extends into a second side of the substrate, opposite the first side of the substrate, to the STI structure. The STI structure and the outer isolation structure laterally surround the photodetector. An inner isolation structure extends into the second side of the substrate and overlies the photodetector. The inner isolation structure is vertically separated from the photodetector by the substrate. Further, the outer isolation structure laterally surrounds the inner isolation structure.

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