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公开(公告)号：US08927192B2
公开(公告)日：2015-01-06
申请号：US13605360
申请日：2012-09-06
申请人： Tsutomu Ogihara , Motoaki Iwabuchi
发明人： Tsutomu Ogihara , Motoaki Iwabuchi
CPC分类号： G03F7/16 , B01D36/001 , G03F7/004
摘要： A production method of a resist composition for lithography, including, at least: a filtering step for filtering a resist composition for lithography by a filter therethrough, wherein in the filtering step, the resist composition for lithography is passed through the filter after an interior of a vessel having the filter installed therein is kept under reduced pressure. There can be provided a resist composition for lithography capable of decreasing occurrences of defects such as coating defects and pattern defects.
摘要翻译： 用于光刻的抗蚀剂组合物的制造方法至少包括：用于通过其中的过滤器对用于光刻的光刻胶组合物进行过滤的过滤步骤，其中在所述过滤步骤中，用于光刻的抗蚀剂组合物在经过过滤器的内部 将安装有过滤器的容器保持在减压下。 可以提供一种用于光刻的抗蚀剂组合物，其能够减少诸如涂层缺陷和图案缺陷等缺陷的发生。
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42.发明授权Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process 有权用于形成含硅膜，含硅膜形成基板和图案化工艺的组合物公开(公告)号：US08852844B2
公开(公告)日：2014-10-07
申请号：US12461374
申请日：2009-08-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
CPC分类号： G03F7/11 , C08G77/14 , C08G77/18 , C08K5/0025 , C08K5/053 , C08K5/092 , C08L83/06 , C09D183/06 , G03F7/0752
摘要： There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.
摘要翻译： 公开了一种用于形成含硅膜的热固性组合物，以形成在用于光刻的多层抗蚀剂工艺中形成的含硅膜，其至少包括（A）通过水解和缩合可水解硅化合物获得的含硅化合物 使用酸作为催化剂，（B）热交联促进剂（C）具有1〜30个碳原子的一价或二价以上的有机酸，（D）三价以上的醇和（E）有机溶剂。 可以提供一种能够在光致抗蚀剂膜中形成良好图案的含硅膜的组合物，可以形成具有良好耐干蚀刻性的蚀刻掩模用含硅膜，可以提供良好的储存稳定性，并且可以 用于用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液，其上形成含硅膜的基板，以及形成图案的方法。
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43.发明授权Resist underlayer film composition, process for forming resist underlayer film, patterning process and fullerene derivative 有权抗蚀剂下层膜组合物，形成抗蚀剂下层膜的工艺，图案化工艺和富勒烯衍生物公开(公告)号：US08835092B2
公开(公告)日：2014-09-16
申请号：US13015094
申请日：2011-01-27
申请人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Takeru Watanabe , Takeshi Kinsho , Tsutomu Ogihara , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
CPC分类号： C07C69/753 , C07C2604/00 , C08L61/06 , G03F7/094 , G03F7/40
摘要： There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
摘要翻译： 公开了用于光刻的多层抗蚀剂膜的抗蚀剂下层膜组合物，其包含（A）具有由热不稳定基团保护的羧基的富勒烯衍生物和（B）有机溶剂。 可以存在用于形成抗蚀剂底层的光刻用的多层抗蚀剂膜的抗蚀剂下层膜组合物，其中可以高度抑制基板蚀刻中的摆动的产生，并且可以使用化学放大抗蚀剂形成上层图案的中毒问题 避免形成抗蚀剂下层膜的方法，图案化工艺和富勒烯衍生物。
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44.发明授权公开(公告)号：US07855043B2
公开(公告)日：2010-12-21
申请号：US11808100
申请日：2007-06-06
摘要： A silicon-containing film is formed from a heat curable composition comprising (A-1) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst and removing the acid catalyst, (A-2) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of a basic catalyst and removing the basic catalyst, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively.
摘要翻译： 由含有（A-1）在酸催化剂存在下进行可水解硅化合物的水解缩合得到的含硅化合物和除去酸催化剂（A-2）的热固性组合物形成含硅膜 ）通过在碱性催化剂的存在下进行可水解硅化合物的水解缩合而除去碱性催化剂得到的含硅化合物，（B）锂，钠，钾，铷或铯的氢氧化物或有机酸盐，或 锍，碘或铵化合物，（C）有机酸和（D）有机溶剂。 含硅膜允许覆盖的光致抗蚀剂膜被有效地图案化。
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公开(公告)号：US20100273110A1
公开(公告)日：2010-10-28
申请号：US12662078
申请日：2010-03-30
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/091 , H01L21/0273
摘要： There is disclosed a patterning process comprises at least (1) a step of forming an organic underlayer film on a substrate and then forming a photoresist pattern on the organic underlayer film, (2) a step of attaching an alkaline solution containing an alkaline substance onto the photoresist pattern and then removing the excess alkaline solution, (3) a step of applying a solution of a siloxane polymer crosslinkable by action of the alkaline substance onto the photoresist pattern to form a crosslinked part by crosslinking the siloxane polymer near the photoresist patterns, and (4) a step of removing the uncrosslinked siloxane polymer and the photoresist pattern. There can be provided a patterning process capable of forming a further finer pattern simply and efficiently and with a high practicability applicable to semiconductor manufacturing.
摘要翻译： 公开了一种图案化工艺，至少包括（1）在衬底上形成有机下层膜，然后在有机下层膜上形成光致抗蚀剂图案的步骤，（2）将含有碱性物质的碱性溶液附着到 光致抗蚀剂图案，然后除去过量的碱性溶液，（3）通过将光致抗蚀剂图案附近的硅氧烷聚合物交联，将通过碱性物质的作用将可交联的硅氧烷聚合物溶液施加到光致抗蚀剂图案上以形成交联部分的步骤， 和（4）除去未交联的硅氧烷聚合物和光致抗蚀剂图案的步骤。 可以提供能够简单有效地形成更精细图案并且具有适用于半导体制造的高实用性的图案化工艺。
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46.发明申请Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer film 有权形成抗蚀剂下层膜的方法，使用该方法的图案化方法以及抗蚀剂下层膜的组合物公开(公告)号：US20100099044A1
公开(公告)日：2010-04-22
申请号：US12585387
申请日：2009-09-14
申请人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
发明人： Jun Hatakeyama , Toshihiko Fujii , Tsutomu Ogihara
摘要： There is disclosed a method for forming a resist underlayer film of a multilayer resist film having at least three layers used in a lithography, comprising at least; a step of coating a composition for resist underlayer film containing a novolak resin represented by the following general formula (1) obtained by treating a compound having a bisnaphthol group on a substrate; and a step of curing the coated composition for the resist underlayer film by a heat treatment at a temperature above 300° C. and 600° C. or lower for 10 to 600 seconds. There can be provided a method for forming a resist underlayer film, and a patterning process using the method to form a resist underlayer film in a multilayer resist film having at least three layers used in a lithography, gives a resist underlayer film having a lowered reflectance, a high etching resistance, and a high heat and solvent resistances, especially without wiggling during substrate etching.
摘要翻译： 公开了一种形成多层抗蚀剂膜的抗蚀剂下层膜的方法，所述多层抗蚀剂膜具有至少三层，其至少包括： 涂布含有下述通式（1）表示的酚醛清漆树脂的抗蚀剂下层膜用组合物的工序，所述酚醛清漆树脂通过在基材上处理具有双萘酚基的化合物而得到; 以及通过在高于300℃和600℃或更低的温度下热处理10至600秒来固化抗蚀剂下层膜的涂覆组合物的步骤。 可以提供一种形成抗蚀剂下层膜的方法，并且使用在具有至少三层的平版印刷用的多层抗蚀剂膜中形成抗蚀剂下层膜的方法的图案化工艺，得到具有降低的反射率的抗蚀剂下层膜 ，耐腐蚀性高，耐热和耐溶剂性高，特别是在基板蚀刻期间无晃动。
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47.发明申请Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process 有权用于形成含硅膜，含硅膜形成基板和图案化工艺的组合物公开(公告)号：US20100086870A1
公开(公告)日：2010-04-08
申请号：US12461374
申请日：2009-08-10
申请人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
发明人： Tsutomu Ogihara , Takafumi Ueda , Toshiharu Yano
CPC分类号： G03F7/11 , C08G77/14 , C08G77/18 , C08K5/0025 , C08K5/053 , C08K5/092 , C08L83/06 , C09D183/06 , G03F7/0752
摘要： There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.
摘要翻译： 公开了一种用于形成含硅膜的热固性组合物，以形成在用于光刻的多层抗蚀剂工艺中形成的含硅膜，其至少包括（A）通过水解和缩合可水解硅化合物获得的含硅化合物 使用酸作为催化剂，（B）热交联促进剂（C）具有1〜30个碳原子的一价或二价以上的有机酸，（D）三价以上的醇和（E）有机溶剂。 可以提供一种能够在光致抗蚀剂膜中形成良好图案的含硅膜的组合物，可以形成具有良好耐干蚀刻性的蚀刻掩模用含硅膜，可以提供良好的储存稳定性，并且可以 用于用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液，其上形成含硅膜的基板，以及形成图案的方法。
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公开(公告)号：US07687228B2
公开(公告)日：2010-03-30
申请号：US12071804
申请日：2008-02-26
IPC分类号： G03F7/11 , H01L21/027 , G03F7/40 , C08F20/24
CPC分类号： G03F7/091
摘要： An antireflection film composition, wherein an etching speed is fast, thus, when used as a resist lower layer, a film loss of a resist pattern and deformation of the pattern during etching can be minimized, and because of a high crosslinking density, a dense film can be formed after thermal crosslinking, thus, mixing with an upper layer resist can be prevented and the resist pattern after development is good is provided. The antireflection film composition comprising; at least a polymer having a repeating unit represented by the following general formula (I).
摘要翻译： 一种防反射膜组合物，其中蚀刻速度快，因此，当用作抗蚀剂下层时，抗蚀剂图案的膜损失和蚀刻期间图案的变形可以最小化，并且由于交联密度高，致密的 可以在热交联后形成膜，因此可以防止与上层抗蚀剂的混合，显影后的抗蚀剂图案良好。 该防反射膜组合物包含： 至少一种具有由以下通式（I）表示的重复单元的聚合物。
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公开(公告)号：US07642043B2
公开(公告)日：2010-01-05
申请号：US11544552
申请日：2006-10-10
申请人： Tsutomu Ogihara , Takafumi Ueda
发明人： Tsutomu Ogihara , Takafumi Ueda
摘要： There is disclosed a rework process for a photoresist film over a substrate having at least an antireflection silicone resin film and the photoresist film over the silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the silicone resin film unremoved; and forming a photoresist film again over the silicone resin film. In this case, the substrate over which the photoresist film is reworked can have an organic film under the silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost.
摘要翻译： 公开了一种在具有至少抗反射硅酮树脂膜和硅氧烷树脂膜上的光致抗蚀剂膜的基板上的光致抗蚀剂膜的返工工艺，其包括：至少除去光致抗蚀剂膜，同时留下硅树脂膜不被除去; 并在硅树脂膜上再次形成光致抗蚀剂膜。 在这种情况下，光致抗蚀剂膜被重新加工的基板可以在有机硅树脂膜下面具有有机膜。 可以提供可以以更低成本更容易地进行的光致抗蚀剂膜的返工工艺。
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公开(公告)号：US07638268B2
公开(公告)日：2009-12-29
申请号：US11594937
申请日：2006-11-09
申请人： Tsutomu Ogihara , Takafumi Ueda
发明人： Tsutomu Ogihara , Takafumi Ueda
CPC分类号： G03F7/0752 , G03F7/091 , G03F7/168 , G03F7/422
摘要： There is disclosed a rework process for a photoresist film over a substrate having at least a first antireflection silicone resin film and the photoresist film over the first silicone resin film comprising: at least removing the photoresist film with a solvent while leaving the first silicone resin film unremoved; forming a second antireflection silicone resin film over the first silicone resin film; and forming a photoresist film again over the second silicone resin film. There can be provided a rework process for a photoresist film that can be conducted more easily at lower cost and provide more certainly an excellent resist pattern.
摘要翻译： 公开了一种在具有至少第一抗反射硅酮树脂膜的第一有机硅树脂膜上的光致抗蚀剂膜上的光刻胶膜的再加工工艺，并且在第一有机硅树脂膜上方具有光致抗蚀剂膜，其包括：至少用溶剂除去光致抗蚀剂膜，同时留下第一有机硅树脂膜 不动 在第一有机硅树脂膜上形成第二抗反射硅树脂膜; 并在第二有机硅树脂膜上再次形成光致抗蚀剂膜。 可以提供能够以更低的成本更容易地进行的光致抗蚀剂膜的返工工艺，并且更确实地提供优异的抗蚀剂图案。
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