摘要:
There is formed a gate electrode (word line) via a gate insulating film on a semiconductor substrate, the gate electrode extending in the direction inclining at an angle of approximately 45 degrees to the extending direction of an element region. The element region is divided into three portions by the two gate electrodes. In each element region portion, two MOS transistors are provided. A bit line is connected to a W plug provided in the central region portion and lower electrodes of two ferroelectric capacitors are connected to other W plugs provided in both end region portions. The extending direction of the bit line inclines approximately 45 degrees to the extending direction of the element region.
摘要:
A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要:
Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1 having a light-receiving portion 12 to photoelectrically convert incident light is characterized by including a film 21, which is disposed on a light-receiving surface 12s of the above-described light-receiving portion 12 and which lowers an interface state, and a film 22, which is disposed on the above-described film 21 to lower the interface state and which has a negative fixed charge, wherein a hole accumulation layer 23 is disposed on the light-receiving surface 12s side of the light-receiving portion 12.
摘要:
A semiconductor device includes: a semiconductor substrate; a PFET formed on the substrate, the PFET includes a SiGe layer disposed on the substrate, a high-K dielectric layer disposed on the SiGe layer, a first metallic layer disposed on the high-k dielectric layer, a first intermediate layer disposed on the first metallic layer, a second metallic layer disposed on the first intermediate layer, a second intermediate layer disposed on the second metallic layer, and a third metallic layer disposed on the second intermediate layer; an NFET formed on the substrate, the NFET includes the high-k dielectric layer, the high-k dielectric layer being disposed on the substrate, the second intermediate layer, the second intermediate layer being disposed on the high-k dielectric layer, and the third metallic layer, the third metallic layer being disposed on the second intermediate layer. Alternatively, the first metallic layer is omitted. A method to fabricate the device includes providing SiO2 and alpha-silicon layers or a dBARC layer.
摘要:
It is an object of this invention to provide a cell culture vessel which has a simple and convenient structure, can prevent the injury on the cells at the time of peeling, and accelerates the transportation of nutrients and discharge of waste materials. In order to solve the problem mentioned above, the cell culture vessel of this invention has protrusions having a corresponding diameter not smaller than 10 nm and not greater than 10 μm and a height not smaller than 10 nm and not greater than 1 mm on the surface of the cell culture vessel. The protrusions make the culture fluid permeate into the under part of the cells, accelerate the supply of nutrients and discharge of waste materials, and makes the contact between the cells and the vessel as a point-contact and thereby prevents the cells from the injury which the cells undergo at the time of peeling.
摘要:
In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor device using a gate first process, and fabricating a p-type metal-oxide-semiconductor device using a gate last process.
摘要:
A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
摘要:
A fixing device is provided including a plurality of supporters, an endless belt movably supported by the supporters in a main direction, a heat source which heats the endless belt, and a pressing element which presses on the endless belt. Two bridging portions of the belt extend between the supporters, one bridging portion is tensed, the other bridging portion is tense-free. A fixing nip is formed by contacting the pressing element with an outer surface of the tensed bridging portion. The fixing device further includes a heat source which heats a rounding portion of the belt that is wound around a supporter on an upstream side and a cleaning mechanism which cleans a surface of the rounding portion.
摘要:
A method of transcribing a shape of a surface of a stamper on a transcription surface of a transcription object by pressing the stamper on the transcription object, which comprises steps of: having one of the stamper and the transcription object positioned opposite a plate surface and the other of the stamper and the transcription object placed on one surface of a pressure plate; and having the one of the stamper and the transcription object pressed onto the plate surface by applying a fluid on the other surface of the pressure plate, wherein an area of the one surface of the pressure plate is larger than a contact area in which the other of the stamper and the transcription object is in contact with the pressure plate.
摘要:
In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.