Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus, and radio timepiece
    41.
    发明授权
    Piezoelectric vibrating piece, piezoelectric vibrator, oscillator, electronic apparatus, and radio timepiece 有权
    压电振动片,压电振动器,振荡器,电子仪器和无线电钟表

    公开(公告)号:US08558628B2

    公开(公告)日:2013-10-15

    申请号:US13369635

    申请日:2012-02-09

    申请人: Takashi Kobayashi

    发明人: Takashi Kobayashi

    IPC分类号: H01L41/053 H03B5/32

    摘要: A piezoelectric vibrating piece includes a pair of vibration arm portions that is placed in a row in a width direction; a base portion to which proximal end sides in the pair of vibration arm portions in an extending direction are connected; and weight metal films that are formed on outer surfaces of the vibration arm portions, wherein the weight metal films are formed in positions that avoid regions of tip portions in the vibration arm portions in a longitudinal direction.

    摘要翻译: 压电振动片包括沿宽度方向排列成一排的一对振动臂部, 所述一对振动臂部中的基端部朝向延伸方向连接的基部; 以及形成在所述振动臂部的外表面上的重量金属膜,其中所述重量金属膜形成为在纵向方向上避免所述振动臂部分中的尖端部分的区域的位置。

    Evaluation device and evaluation system evaluating whether a required output is made from the device to be evaluated
    42.
    发明授权
    Evaluation device and evaluation system evaluating whether a required output is made from the device to be evaluated 有权
    评估装置和评估系统评估是否从要评估的装置进行所需的输出

    公开(公告)号:US08299805B2

    公开(公告)日:2012-10-30

    申请号:US12018664

    申请日:2008-01-23

    IPC分类号: G01R27/02

    CPC分类号: H04M1/24

    摘要: An evaluation device 20 comprises a circuit element comprising respective pairs of inputs and outputs including several capacitances 25a-25c and resistances 26a-26d, one end of each being connected to both ends of the capacitances 25a-25c, wherein a resistance value of a signal input side is generally equal to that of a signal output side. The evaluation device 20 is further provided with a connecting terminal with an output device 10 for outputting signals to a device to be evaluated 30 on the signal input side, and is provided with a connecting terminal with the device to be evaluated 30 on the signal output side.

    摘要翻译: 评估装置20包括电路元件,其包括相应的输入和输出对,该对输入和输出包括若干电容25a-25c和电阻26a-26d,其一端连接到电容25a-25c的两端,其中信号的电阻值 输入侧通常等于信号输出侧的输入侧。 评估装置20还具有连接端子,其具有用于在信号输入侧向待评估装置30输出信号的输出装置10,并且在信号输出端上设置有待评估装置30的连接端子 侧。

    Semiconductor device
    43.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08278700B2

    公开(公告)日:2012-10-02

    申请号:US13072211

    申请日:2011-03-25

    IPC分类号: H01L29/792

    摘要: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

    摘要翻译: 为了通过电池级提供具有提高可靠性的便宜的半导体存储器件,以代替通过诸如ECC的电存储器单元中的缺陷脱离,并且还用于提供能够在垂直方向上按比例缩小的单元结构,同时保持 在需要高速读出操作的半导体存储器件中的可靠性,电荷存储区域由大量半导体电荷存储小区域制成的粒子构成,各自独立,从而通过 细胞水平。

    Method of fabricating piezoelectric vibrating pieces
    44.
    发明授权
    Method of fabricating piezoelectric vibrating pieces 失效
    制造压电振动片的方法

    公开(公告)号:US08214982B2

    公开(公告)日:2012-07-10

    申请号:US12360435

    申请日:2009-01-27

    申请人: Takashi Kobayashi

    发明人: Takashi Kobayashi

    IPC分类号: H04R17/10 H01L41/047

    摘要: To carry out frequency adjustment easily, accurately and efficiently without being influenced by a size of a piezoelectric vibrating piece and achieve low cost formation and promotion of maintenance performance, there is provided a method of fabricating a piezoelectric vibrating piece which is a method of fabricating a piezoelectric vibrating piece having a piezoelectric vibrating plate 11, a pair of exciting electrodes 12, 13, and a pair of mount electrodes 15, 16 by utilizing a wafer S, the method including an outer shape forming step of forming a frame portion S1 at a wafer and forming a plurality of piezoelectric plates at the frame portion to be connected thereto by way of a connecting portion 11a, an electrode forming step of forming pairs of exciting electrodes and pairs of mount electrodes respectively at the plurality of piezoelectric plates and forming a common electrode S2 respectively electrically connected to a plurality of the pairs of mount electrodes 15 on one side by way of the connecting portion, a frequency adjusting step of adjusting a frequency of the piezoelectric plate by applying a drive voltage between the common electrode and the mount electrode 16 on other side, and a cutting step of fragmenting the plurality of piezoelectric plates.

    摘要翻译: 为了容易地,准确而有效地进行频率调整而不受压电振动片的尺寸的影响,并且实现低成本形成和提高维护性能,提供了一种制造压电振动片的方法,该方法是制造 具有压电振动板11的压电振动片,利用晶片S的一对激励电极12,13和一对安装电极15,16,该方法包括:外形形成步骤,以在 晶片,并通过连接部分11a在框架部分形成多个压电板,电极形成步骤分别在多个压电板上形成一对激励电极和一对安装电极,并形成共同的 电极S2分别电连接到一对侧的多对安装电极15上 连接部分的ay;频率调节步骤,通过在公共电极和另一侧的安装电极16之间施加驱动电压来调节压电板的频率,以及分割多个压电板的切割步骤。

    Sample stage apparatus and method of controlling the same
    45.
    发明授权
    Sample stage apparatus and method of controlling the same 有权
    样品台装置及其控制方法

    公开(公告)号:US08174229B2

    公开(公告)日:2012-05-08

    申请号:US12420358

    申请日:2009-04-08

    IPC分类号: B64C17/06

    摘要: The present invention provides a stage apparatus capable of reducing a positioning time without increasing a positional deviation. A positioning control method of a sample stage apparatus includes: a high-speed movement step of moving a table to a high-speed movement target position at a first movement speed; a positional deviation correcting step of moving the table to a low-speed positioning step start position at a second movement speed that is lower than the first movement speed; a low-speed positioning step of moving the table to a target position at a third movement speed that is lower than the second movement speed. After the low-speed positioning step is completed, a rod connected to a motor returns to its original position to separate a pin of the rod side from a concave portion of the table side.

    摘要翻译: 本发明提供一种能够在不增加位置偏差的情况下减少定位时间的舞台装置。 采样台装置的定位控制方法包括:以第一移动速度将桌子移动到高速移动目标位置的高速移动步骤; 位置偏差校正步骤,以低于第一移动速度的第二移动速度将桌子移动到低速定位步骤开始位置; 低速定位步骤,以低于第二移动速度的第三移动速度将桌子移动到目标位置。 在低速定位步骤完成之后,连接到电动机的杆返回到其原始位置,以将杆侧的销与台侧的凹部分开。

    Perforation method and perforation apparatus
    46.
    发明授权
    Perforation method and perforation apparatus 有权
    穿孔法和穿孔装置

    公开(公告)号:US08173932B2

    公开(公告)日:2012-05-08

    申请号:US12178263

    申请日:2008-07-23

    IPC分类号: B23K26/38

    CPC分类号: B23K26/18 B23K26/389

    摘要: A perforation method and an perforation apparatus in which a hollow member of a fuel injection nozzle is filled with a filler such as a zirconia ball, and a laser light is applied to the hollow member to form an injection hole while vibrating the zirconia ball using an ultrasonic vibrator. After the injection hole is formed, the laser light is introduced through the injection hole to the inside of the fuel injection nozzle, and thereby is applied to the vibrated zirconia ball.

    摘要翻译: 一种穿孔方法和穿孔装置,其中燃料喷嘴的中空构件填充有诸如氧化锆球的填料,并且激光被施加到中空构件以形成喷射孔,同时使用 超声波振动器。 在形成注射孔之后,将激光通过注射孔引入燃料喷嘴的内部,由此施加到振动的氧化锆球上。

    Semiconductor device and method of manufacturing the same
    47.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08106395B2

    公开(公告)日:2012-01-31

    申请号:US12113923

    申请日:2008-05-01

    IPC分类号: H01L21/66 H01L23/58

    摘要: A technique of manufacturing a semiconductor device capable of performing a probe test by a common test apparatus as normal LSI chips even for large-area chips is provided. A chip comprising a device formed on a device area by a semiconductor process and including a plurality of test areas sectioned by chip areas is prepared. Next, pads to be electrically connected to the device are formed at corresponding positions on the respective plurality of test areas. Subsequently, the respective test areas are tested by a same probe card via the plurality of pads.

    摘要翻译: 提供了即使对于大面积芯片也能够通过普通的测试装置进行探针测试的半导体器件的制造技术。 制备包括通过半导体工艺在器件区域上形成并包括由芯片区域划分的多个测试区域的器件的芯片。 接下来,在相应的多个测试区域上的相应位置处形成要与该器件电连接的焊盘。 随后,通过多个焊盘通过相同的探针卡测试各个测试区域。

    Method for forming silicon oxide film, plasma processing apparatus and storage medium
    48.
    发明授权
    Method for forming silicon oxide film, plasma processing apparatus and storage medium 失效
    氧化硅膜形成方法,等离子体处理装置和存储介质

    公开(公告)号:US07972973B2

    公开(公告)日:2011-07-05

    申请号:US12443137

    申请日:2007-09-28

    摘要: The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

    摘要翻译: 本发明提供一种形成氧化硅膜的方法,其具有基本上均匀的膜厚度,并且不受等离子体氧化工艺的优点的保证,在受加工物体上设置的图案中的致密部位和散射部位的影响 在低压和低氧浓度条件下进行。 在该方法中,在等离子体处理装置的处理室中,将处理气体的等离子体施加到具有凹凸图案的物体的表面,以氧化物体表面上的硅,从而形成硅 氧化膜。 在处理气体中的氧的比例在0.1〜10%的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体,用等离子体氧化法, 具有形成在其中的多个通孔,设置在处理室中用于产生等离子体的区域和待处理物体之间。

    Ultrasound probe
    49.
    发明授权
    Ultrasound probe 失效
    超声探头

    公开(公告)号:US07969067B2

    公开(公告)日:2011-06-28

    申请号:US12161962

    申请日:2006-11-14

    IPC分类号: H01L41/08

    CPC分类号: G10K11/002 A61B8/00

    摘要: There is provided an ultrasound probe including a first substrate having a silicon substrate and an ultrasound transmit-receive element, an acoustic lens disposed over an upper surface of the first substrate, and a damping layer disposed under the first substrate, in which a second substrate is disposed between a lower surface of the first substrate and an upper surface of the damping layer, and the second substrate is made of a material having approximately the same linear expansion coefficient and acoustic impedance as the silicon substrate of the first substrate. With this structure, it is possible to provide the ultrasound probe which can prevent damage to the silicon substrate due to temperature change and has excellent transmission/reception performance and structure reliability while reducing noise by reflected waves in transmission and reception.

    摘要翻译: 提供一种超声波探头,其包括具有硅衬底和超声波发射接收元件的第一衬底,设置在第一衬底的上表面上的声透镜,以及设置在第一衬底下方的阻尼层,其中第二衬底 设置在第一基板的下表面和阻尼层的上表面之间,第二基板由具有与第一基板的硅基板大致相同的线膨胀系数和声阻抗的材料制成。 利用这种结构,可以提供能够防止由于温度变化而损坏硅基板的超声波探头,并且在发送和接收中减少反射波的噪声的同时具有优异的发送/接收性能和结构可靠性。

    Semiconductor device
    50.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US07939879B2

    公开(公告)日:2011-05-10

    申请号:US11896800

    申请日:2007-09-06

    IPC分类号: H01L29/792

    摘要: For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.

    摘要翻译: 为了通过电池级提供具有提高可靠性的便宜的半导体存储器件,以代替通过诸如ECC的电存储器单元中的缺陷脱离,并且还用于提供能够在垂直方向上按比例缩小的单元结构,同时保持 在需要高速读出操作的半导体存储器件中的可靠性,电荷存储区域由大量半导体电荷存储小区域制成的粒子构成,各自独立,从而通过 细胞水平。