摘要:
An optical waveguide includes a partial cylindrical portion, and a plurality of end portions. The partial cylindrical portion has an elongated profile, and is formed of a material transparent to light propagating along the partial cylindrical portion. The end portion has an approximately partial spherical profile, smoothly joins the partial cylindrical portion, and is formed of the same material as the material of the partial cylindrical portion, so that the light propagates along the partial cylindrical portion and the end portions while repeating total reflections at a boundary surface contouring the partial cylindrical portion and the end portions.
摘要:
A surface emitting semiconductor laser includes an active region formed on a growth substrate, upper and lower mirror layers that sandwich the active region to construct a vertical cavity, a selective oxidization layer, and a current injecting unit for injecting a current into the active region. The selective oxidization layer is selectively oxidized and insulated and is provided on the side of the active region opposite to the side of the substrate. In this structure, a post portion is formed by removing semiconductor material formed on the substrate down to an uppermost or halfway level of the selective oxidization layer while the selective oxidization layer is used as an etch stop layer, and the selective oxidization layer acts as both a current confinement layer for the current injection and an insulating layer for the current injecting unit.
摘要:
An integrated optical node includes a main waveguide, a sub-waveguide, a fixed-wavelength type optical coupler and a tunable type optical coupler. On the sub-waveguide, an optical receiver may be formed to detect light guided from the main waveguide to the sub-waveguide by the optical coupler and/or a laser may be formed to emit light to be guided from the sub-waveguide to the main waveguide by the optical coupler. The elements of the optical node are arranged on a common semiconductor substrate so that the optical node can be reduced in size.
摘要:
An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.
摘要:
A semiconductor laser includes a semiconductor laser structure having an active layer. The laser structure is designed such that light in both of two polarization modes can be excited therein. First and second reflectors are provided, and at least one of them is a distributed reflector which determines first and second reflection wavelengths for the two polarization modes. A coupling unit is provided for coupling the laser structure and the first and second reflectors for either of the light of the two polarization modes at first and second coupling wavelengths, which respectively coincide with the first and second reflection wavelengths. One of the light of the two polarization modes at the first and second reflection wavelengths is selectively propagated along a cavity comprised of the laser structure and the first and second reflectors by a control unit. Thus, light oscillates in one of the two polarization modes at the first and second reflection wavelengths.
摘要:
An optical semiconductor apparatus includes at least two upper and lower light waveguides. The waveguides are formed in a direction of semiconductor layers layered on a substrate and have a predetermined coupling degree therebetween. At least one semiconductor laser and at least one photodetector are respectively arranged in any one of the light waveguides. A grating may be formed in or in the vicinity of any one of the light waveguides to attain a wavelength-sensitivity in the coupling between the upper and lower light waveguides. The coupling degree may be controlled by a voltage applied to a part of the waveguides. An incident light entering one of the waveguides can be coupled to a local oscillation light emitted from the semiconductor laser to generate a beat signal therebetween. The beat signal can be detected by the photodetector.
摘要:
The present invention relates to optical apparatus such as a photosensor, a semiconductor laser, an optical amplifier in which a wavelength selective photocoupler is used so as to couple two waveguides through a diffraction grating.A photosensor which is one of the optical apparatus according to the present invention comprises a substrate, a first waveguide layer formed on the substrate, a second waveguide layer formed on the first waveguide layer to be stacked in a direction of thickness and which has a guided mode difference from that of the first waveguide layer, a diffraction grating formed on an overlapping region of the guided modes of the first and second waveguide layers and which couples light components of a specific wavelength range of light propagating through the first waveguide layer to the second waveguide layer, a light absorption layer for absorbing at least some light components of the light components coupled to the second waveguide layer, and an electrode for converting the light components absorbed by the light absorption layer into an electrical signal and outputting the electrical signal.
摘要:
A functional optical element has at least one diffraction grating in which first and second elements are alternately arranged. At least one of the first and second elements comprises an optically anisotropic substance and the adjacent elements are substantially different from each other. This diffraction grating is so disposed that the arrayed surface of the diffraction grating is located in the path of the incident light beam. The functional optical device is characterized in that an incident light beam having an arbitrary polarization characteristic is functioned as a plurality of light beams which are polarized in the different directions, so that at least part of the incident light beam is subjected to the diffraction effect. The optical condition of at least one of the first and second elements may be varied by a control device.
摘要:
A single image is exposed a plurality of times on a solid state image sensor. Charges induced in each exposure and distributed accordingly are added upon shifting the charge positions in the image sensor and are extracted as electrical signals. The multiple exposures may be made at locations on the sensor which are shifted slightly from each to other, or charges from one exposure may be shifted before a later exposure.