公开(公告)号：US20110271898A1

公开(公告)日：2011-11-10

申请号：US13143859

申请日：2009-11-27

申请人： Makoto Iida ,  Kazuo Matsuzawa

发明人： Makoto Iida ,  Kazuo Matsuzawa

IPC分类号： C30B15/14 ,  C30B15/10

CPC分类号： C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： The present invention is a single-crystal manufacturing method based on the Czochralski method, comprising at least the steps of: producing a melt by heating and melting a crystalline raw material in a crucible with a heater; maturing the melt by keeping the melt at a high temperature; growing a single crystal after dipping a seed crystal into the matured melt, wherein the heater and the crucible are relatively moved up and down in the step of maturing. As a result, there is provided a single-crystal manufacturing method that enables the generation of dislocation to be effectively suppressed and a high quality single crystal to be manufactured at good yield, particularly in case of bulling the single crystal having a large diameter, in manufacture of the single crystal.

摘要翻译： 本发明是一种基于切克劳斯基法的单晶制造方法，其至少包括以下步骤：通过加热熔融坩埚中的结晶原料来制造熔体; 通过将熔体保持在高温下使熔体成熟; 在将晶种浸入成熟熔体中之后生长单晶，其中加热器和坩埚在成熟步骤中相对上下移动。 结果，提供了一种单晶制造方法，其能够有效地抑制位错的产生和以高产率制造高品质单晶，特别是在具有大直径的单晶的情况下， 制造单晶。

公开(公告)号：US06841450B2

公开(公告)日：2005-01-11

申请号：US10130431

申请日：2001-09-18

申请人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Makoto Iida

发明人： Norihiro Kobayashi ,  Masaro Tamatsuka ,  Takatoshi Nagoya ,  Wei Feig Qu ,  Makoto Iida

IPC分类号： B60R1/06 ,  B01J35/02 ,  B60J1/00 ,  C03C17/34 ,  C09K3/18 ,  H01L21/304 ,  H01L21/324 ,  H01L21/336

CPC分类号： H01L21/324

摘要： The present invention provides an annealed wafer manufacturing method using a heat treatment method causing no change in resistivity of a wafer surface even when a silicon wafer having boron deposited on a surface thereof from an environment is subjected to heat treatment in an insert gas atmosphere and enabling the heat treatment in an ordinary diffusion furnace not requiring a sealed structure for increasing airtightness nor any specific facility such as explosion-proof facility. The present invention also provides an annealed wafer in which a boron concentration in the vicinity of a surface thereof is constant and crystal defects are annihilated. In the annealed wafer manufacturing method, a silicon wafer having a natural oxide film formed on a surface thereof with boron deposited thereon from an environment is subjected to heat treatment in an atmosphere containing hydrogen gas to remove the deposited boron before the natural oxide film is removed, and then is subjected to heat treatment in an inert gas atmosphere.

摘要翻译： 本发明提供一种退火晶片的制造方法，其使用不会改变晶片表面的电阻率的热处理方法，即使当在其表面上沉积硼的硅晶片在嵌入气体气氛中进行热处理时， 在不需要用于增加气密性的密封结构的普通扩散炉中的热处理以及防爆设施等具体设施。 本发明还提供一种其表面附近的硼浓度恒定并且结晶缺陷被消除的退火晶片。 在退火的晶片制造方法中，将具有在其表面上形成有自然氧化物膜的硅晶片从环境沉积在其上的硅晶片在包含氢气的气氛中进行热处理，以在去除天然氧化物膜之前去除沉积的硼 然后在惰性气体气氛中进行热处理。

公开(公告)号：US06599360B2

公开(公告)日：2003-07-29

申请号：US09936920

申请日：2001-09-20

申请人： Makoto Iida ,  Masanori Kimura

发明人： Makoto Iida ,  Masanori Kimura

IPC分类号： C30B1502

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  G01N2033/0095 ,  H01L21/3225

摘要： According to the present invention, there are provided a silicon wafer, wherein an epi-layer is not formed on a surface, and number of LSTDs having a size of 50 nm or more existing in a surface layer portion is 0.24 number/cm2 or less; a method for determining production conditions of a silicon single crystal, which comprises pulling nitrogen-doped silicon single crystals by the CZ method while varying V/G and/or PT, producing silicon wafers from the silicon single crystals, subjecting the silicon wafers to a heat treatment, determining acceptability of the wafers based on a predetermined characteristic value, obtaining correlation between the acceptability and V/G and PT, and determining production conditions based on the correlation; and a method for producing a silicon wafer comprising pulling a silicon single crystal so that V/G and PT should be lower than V/G and shorter than PT that are uniquely defined by predetermined nitrogen concentration and oxygen concentration in the silicon single crystal, conditions of heat treatment to which the silicon wafer is subjected, and grown-in defect density of the silicon wafer. According to the present invention, a nitrogen-doped annealed wafer showing a low defect density even under severe examination conditions and little fluctuation thereof depending on the production condition is produced.

摘要翻译： 根据本发明，提供了一种硅晶片，其中在表面上不形成外延层，存在于表层部分中的具有50nm以上的尺寸的LSTD的数量为0.24个/ cm 2以下 ; 一种用于测定硅单晶的生产条件的方法，其包括在改变V / G和/或PT的同时通过CZ方法拉氮掺杂的硅单晶，从硅单晶产生硅晶片，将硅晶片 热处理，基于预定特征值确定晶片的可接受性，获得可接受性与V / G和PT之间的相关性，并且基于相关性确定生产条件; 以及用于制造硅晶片的方法，其包括拉制单晶硅，使得V / G和PT应低于由单晶中的预定氮浓度和氧浓度唯一限定的V / G并且短于PT，条件 硅晶片经受的热处理和硅晶片的成长缺陷密度。 根据本发明，即使在严格的检查条件下，即使在生产条件下也产生不大的波动的氮掺杂退火晶片。

公开(公告)号：US06544332B1

公开(公告)日：2003-04-08

申请号：US09830386

申请日：2001-04-26

申请人： Makoto Iida ,  Masanori Kimura ,  Hiroshi Takeno ,  Yoshinori Hayamizu

发明人： Makoto Iida ,  Masanori Kimura ,  Hiroshi Takeno ,  Yoshinori Hayamizu

IPC分类号： C30B1504

CPC分类号： C30B15/206 ,  C30B29/06

摘要： A method for producing a silicon single crystal in accordance with CZ method, characterized in that before producing the crystal having a predetermined kind and concentration of impurity, another silicon single crystal having the same kind and concentration of impurity as the crystal to be produced is grown to thereby determine an agglomeration temperature zone of grown-in defects thereof, and then based on the temperature, growth condition of the crystal to be produced or temperature distribution within a furnace of a pulling apparatus is set such that a cooling rate of the crystal for passing through the agglomeration temperature zone is a desired rate to thereby produce the silicon single crystal. A silicon single crystal produced in accordance with the above method, characterized in that a density of LSTD before subjecting to heat treatment is 500 number/cm2 or more and the average defect size is 70 nm or less. The present invention provides by CZ method a silicon single crystal and a silicon wafer wherein the dispersion in size and density of grown-in defects is suppressed effectively and the quality is stabilized regardless of the variety of crystals, and a producing method therefor.

摘要翻译： 根据CZ方法制造单晶硅的方法，其特征在于，在制造具有预定种类和浓度的杂质的晶体之前，生长具有与待生产的晶体相同种类和杂质浓度的另一硅单晶 从而确定其生长缺陷的附聚温度区，然后基于温度，将要生产的晶体的生长条件或拉制装置的炉内的温度分布设定为使得用于 通过附聚温度区域是所需的速率，从而产生硅单晶。 根据上述方法制备的硅单晶，其特征在于，在热处理之前的LSTD的密度为500个数/ cm 2以上，平均缺陷尺寸为70nm以下。 本发明通过CZ法提供了硅单晶和硅晶片，其中无论晶体的种类如何，有效地抑制了生长缺陷的尺寸和密度的分散，并且质量稳定，并且其制造方法。

公开(公告)号：US06364947B1

公开(公告)日：2002-04-02

申请号：US09661985

申请日：2000-09-14

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka ,  Hideki Yamanaka

IPC分类号： C30B1500

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  C30B15/22 ,  Y10S117/917 ,  Y10T117/1024 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1088

摘要： In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface ±5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference &Dgr;G (=Ge−Gc) is not greater than 5° C./cm, where Ge is a temperature gradient (° C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (° C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420° C. and 1350° C. or between a melting point of silicon and 1400° C. in the vicinity of the solid-liquid interface of the crystal. The method maintains high productivity and enables a silicon single crystal and silicon wafers to be manufactured such that a defect density is very low over the entire crystal cross section, and the oxygen concentration distribution over the surface of each silicon wafer is improved.

摘要翻译： 在使用Czochralski法制造硅单晶的方法中，在硅单晶的生长期间，进行拉伸，使得晶体内的固体 - 液体界面（不包括外围5mm宽度部分）存在于 固液界面平均垂直位置范围±5 mm。 还公开了根据Czochralski方法制造硅单晶的方法，其中在硅单晶生长期间，控制炉温，使得温度梯度差DELTAG（= Ge-Gc）不大 其中Ge是晶体周边部分的温度梯度（℃/ cm），Gc是晶体中心部分的温度梯度（℃/ cm）， 在晶体的固 - 液界面附近，在1420℃和1350℃之间的晶体下降温度区域中，或在硅熔点和1400℃之间。 该方法保持高生产率，并且能够制造硅单晶和硅晶片，使得在整个晶体截面上的缺陷密度非常低，并且提高了每个硅晶片的表面上的氧浓度分布。

公开(公告)号：US06261361B1

公开(公告)日：2001-07-17

申请号：US09577252

申请日：2000-05-19

申请人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Masaro Tamatsuka ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B1504

CPC分类号： C30B29/06 ,  C30B15/203 ,  Y10S117/917

摘要： There is disclosed a method for producing a silicon single crystal wafer wherein a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm2/° C.·min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient(° C./mm) along the pulling direction within a temperature range of the melting point of silicon to 1400° C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.

摘要翻译： 公开了一种用于制造硅单晶晶片的方法，其中在缺陷分布图中，根据CZ方法在N区域中掺杂氮，生长硅单晶，其示出了水平轴表示的缺陷分布 距离晶体中心的径向距离D（mm）和纵轴表示F / G（mm2 /℃·min）的值，其中F是单晶的拉伸速率（mm / min），以及 G是在硅的熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（℃/ mm）。可以提供一种制造硅单晶晶片的方法，该硅单晶晶片由 通过CZ法在可以容易地在大范围，高收率，高生产率下容易地控制的条件下，通过CZ法在晶体的整个表面中不存在富V区和富I区的N区。

公开(公告)号：US06191675B1

公开(公告)日：2001-02-20

申请号：US09294323

申请日：1999-04-20

申请人： Ryoichi Sudo ,  Tetsuo Tajima ,  Kazutoshi Kobayashi ,  Makoto Iida

发明人： Ryoichi Sudo ,  Tetsuo Tajima ,  Kazutoshi Kobayashi ,  Makoto Iida

IPC分类号： H01F2702

CPC分类号： H01F27/327 ,  H01F38/12

摘要： A small-sized heat resisting high voltage transformer and an ignition transformer using the high voltage transformer are provided and utilize both a heat resistant casting resin and a bobbin, which contain an inorganic filler. The high voltage transformer is capable of producing an output voltage of 10-35 kV and comprises a primary coil, a secondary coil, and a magnetic core, wherein a casting resin is injected into the coil part and subsequently cured. The casting resin and bobbin material used for making the coils have heat distortion temperature of at least 130° C., and contain an inorganic filler. The surface of the bobbin may be pretreated. Thereby, adhesion between a bobbin and a casting resin is enhanced to ensure operating properly under the sever heat cycle condition and provide a small-sized heat resistant high voltage transformer.

摘要翻译： 提供一种小型耐热高压变压器和使用高压变压器的点火变压器，并使用含有无机填料的耐热铸造树脂和绕线管。 高压变压器能够产生10-35kV的输出电压并且包括初级线圈，次级线圈和磁芯，其中铸造树脂被注入到线圈部分中并随后固化。 用于制造线圈的铸塑树脂和筒管材料具有至少130℃的热变形温度，并且含有无机填料。 线轴的表面可以进行预处理。 由此，能够提高筒管与铸塑树脂之间的粘合性，以确保在切断的热循环状态下正常工作，并提供小型耐热高压变压器。

公开(公告)号：US6156427A

公开(公告)日：2000-12-05

申请号：US769348

申请日：1991-10-02

申请人： Masao Gotoh ,  Makoto Iida ,  Kenichi Waragai ,  Meiichi Ohta ,  Susumu Iwai

发明人： Masao Gotoh ,  Makoto Iida ,  Kenichi Waragai ,  Meiichi Ohta ,  Susumu Iwai

IPC分类号： B29B9/14 ,  H01B1/22 ,  B32B1/04 ,  H01B1/06

CPC分类号： H01B1/22 ,  B29B9/14 ,  Y10T428/2938 ,  Y10T428/2956 ,  Y10T428/2973 ,  Y10T428/2998

摘要： An electromagnetic wave interference shield structure molded from an electroconductive resin composition for molding, which comprises columnar pellets of a specific length, made of a bundle of iron-based metal fibers as an essential component and at least one bundle of at least another kind of electroconductive fibers of different material in a different diameter than that of the iron-based metal fibers as independent electroconductive fiber-cores, coated with a thermoplastic resin having a specific range of heat distortion temperature continuously in the longitudinal direction has a stable and distinguished shield effect for a prolonged time.

摘要翻译： 由用于成型的导电树脂组合物模制的电磁波干扰屏蔽结构，其包括由一束铁基金属纤维作为主要成分制成的特定长度的柱状颗粒和至少一种至少另一种导电 与作为独立的导电纤维芯的铁基金属纤维的直径不同的不同材料的纤维在长度方向上连续地涂覆有热变形温度特定范围的热塑性树脂具有稳定和显着的屏蔽效果 长时间

公开(公告)号：US6120749A

公开(公告)日：2000-09-19

申请号：US101941

申请日：1998-07-17

申请人： Kiyotaka Takano ,  Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi

发明人： Kiyotaka Takano ,  Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Hirotoshi Yamagishi

IPC分类号： C30B15/22 ,  C30B15/00 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  C31B33/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10S257/913

摘要： A silicon single-crystal wafer having a diameter of 6 inches or larger and improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof is provided to thereby heighten the yield of device chips produced per wafer. This wafer has no crystal defects with regard to the dielectric breakdown strength of oxide film in its peripheral region which extends from the circumference and accounts for up to 50% of the total area, in particular which extends from the circumference to a circle 30 mm apart from the circumference. A process for producing a silicon single crystal for easily producing, by the Czochralski method, a silicon single-crystal wafer improved in the dielectric breakdown strength of oxide film especially in a peripheral part thereof without considerably lowering the production efficiency is provided. In this process, the silicon single crystal which is being grown by the Czochralski method is pulled at a rate which is 80 to 60% of the critical pull rate inherent in the pulling apparatus.

摘要翻译： PCT No.PCT / JP97 / 00090 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年1月17日PCT PCT。 WO97 / 26393 PCT出版物 日期1997年7月24日提供直径为6英寸或更大并且提高了氧化膜的绝缘击穿强度的硅单晶晶片，特别是其周边部分，从而提高了每片晶片产生的器件芯片的产量。 该晶片在其周边区域中的氧化膜的介电击穿强度方面没有晶体缺陷，其从圆周延伸并占总面积的50％，特别是从圆周延伸到相隔30mm的圆 从圆周。 提供了一种用于通过切克劳斯斯克方法生产硅单晶的方法，其提供了特别在其周边部分提高氧化膜的介电击穿强度的硅单晶晶片，而不会显着降低生产效率。 在这个过程中，以切克劳斯基法生长的硅单晶以牵引装置固有的临界拉伸速率的80％至60％的速率被拉伸。

公开(公告)号：US6066306A

公开(公告)日：2000-05-23

申请号：US188490

申请日：1998-11-09

申请人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

发明人： Makoto Iida ,  Eiichi Iino ,  Masanori Kimura ,  Shozo Muraoka

IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/02 ,  H01L21/208 ,  C01B33/26

CPC分类号： C30B29/06 ,  C30B15/203 ,  C30B15/206

摘要： In a method for producing a silicon single crystal wafer, a silicon single crystal is grown in accordance with the Czochralski method such that the F/G value becomes 0.112-0.142 mm.sup.2 /.degree.C.multidot.min at the center of the crystal, where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient (.degree.C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400.degree. C. Additionally, the single crystal is pulled such that the interstitial oxygen concentration becomes less than 24 ppma , or the time required to pass through a temperature zone of 1050-850.degree. C. within the crystal is controlled to become 140 minutes or less. The method allows production of silicon single crystal wafers in which neither FPDs nor L/D defects exist on the wafer surface, which therefore has an extremely low defect density, and whose entire surface is usable.

摘要翻译： 在制造硅单晶晶片的方法中，根据Czochralski法生长硅单晶，使得F / G值在晶体中心处为0.112-0.142mm 2 /℃×Min，其中F为拉 速率（mm / min），G是在硅熔点至1400℃的温度范围内沿拉伸方向的平均晶体内温度梯度（℃/ mm）。另外，单 拉伸晶体使得间隙氧浓度变得小于24ppma，或者通过晶体内的1050-850℃的温度区域所需的时间被控制为140分钟以下。 该方法允许生产其中晶片表面上不存在FPD和L / D缺陷的硅单晶晶片，因此具有极低的缺陷密度，并且其整个表面可用。