High efficient phosphor-converted light emitting diode
    42.
    发明授权
    High efficient phosphor-converted light emitting diode 有权
    高效磷光转换发光二极管

    公开(公告)号:US07943948B2

    公开(公告)日:2011-05-17

    申请号:US12764436

    申请日:2010-04-21

    IPC分类号: H01L33/00 H01L21/00

    CPC分类号: H01L33/44 H01L33/50

    摘要: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

    摘要翻译: 公开了一种发光器件及其制造方法。 发光器件包括衬底,半导体发光结构,滤光层和荧光转换层。 该方法包括在衬底上形成半导体发光结构,在半导体发光结构上形成滤光层,并在滤光层上形成荧光转换层。

    Semiconductor light-emitting device and method
    43.
    发明授权
    Semiconductor light-emitting device and method 有权
    半导体发光器件及方法

    公开(公告)号:US07906792B2

    公开(公告)日:2011-03-15

    申请号:US12216848

    申请日:2008-07-11

    IPC分类号: H01L33/00

    摘要: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

    摘要翻译: 本发明公开了一种包括半导体发光元件,第一附着层和波长转换结构的半导体发光器件。 从半导体发光元件发射的初级光进入波长转换结构以产生其波长与初级光的波长不同的转换光。 此外,本发明还提供了其形成方法。

    WAVELENGTH CONVERTING SYSTEM
    44.
    发明申请
    WAVELENGTH CONVERTING SYSTEM 有权
    波长转换系统

    公开(公告)号:US20110050126A1

    公开(公告)日:2011-03-03

    申请号:US12941697

    申请日:2010-11-08

    IPC分类号: H05B37/02 F21V9/16

    摘要: An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.

    摘要翻译: 本发明的实施例公开了一种波长转换系统。 波长转换系统包括:具有第一区域和第二区域的波长转换器; 第一光源,设置在所述第一区域下方,并且在所述第一区域上方引导可见的第一混合光; 第二光源,设置在所述第二区域下方,并且在所述第二区域上方引导可见的第二混合光; 以及支撑第一光源和第二光源的载体。 第一光源和第二光源具有1nm〜20nm的主波长差,第一混合光和第二混合光的色温差小于100K。

    OPTOELECTRONIC DEVICE
    45.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号:US20100314657A1

    公开(公告)日:2010-12-16

    申请号:US12813621

    申请日:2010-06-11

    IPC分类号: H01L33/42

    摘要: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.

    摘要翻译: 光电子器件包括半导体叠层层; 位于半导体堆叠层上的第一透明导电氧化物(以下简称为“TCO”)层,其中第一TCO层具有至少一个开口; 以及覆盖所述第一TCO层的第二TCO层,其中所述第二TCO层填充到所述第一TCO层的开口中并与所述半导体堆叠层接触,并且所述第一TCO层和所述第二TCO层中的一个形成欧姆接触 与半导体堆叠层。

    Wavelength converting system
    46.
    发明授权
    Wavelength converting system 有权
    波长转换系统

    公开(公告)号:US07850321B2

    公开(公告)日:2010-12-14

    申请号:US12219084

    申请日:2008-07-16

    IPC分类号: F21V9/16

    摘要: An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength.

    摘要翻译: 本发明的实施例公开了一种波长转换系统,其能够响应于具有第一波长的第一电磁辐射发射具有第二波长的第二电磁辐射,其中第一电磁辐射的能级高于第二电磁辐射的能级 在第一波长和第二波长之间呈正相关。

    Light-emitting device
    48.
    发明申请
    Light-emitting device 有权
    发光装置

    公开(公告)号:US20080308818A1

    公开(公告)日:2008-12-18

    申请号:US11808963

    申请日:2007-06-14

    IPC分类号: H01L33/00

    摘要: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.

    摘要翻译: 发光装置包括发射初级光的LED芯片和沉积在LED芯片上用于吸收初级光以激发二次光的荧光体,其中初级光的波长短于430nm,LED芯片为 由电流密度大于200mA / cm2驱动。 波长转换发光装置具有高的光效率和稳定的色温,其中LED芯片由通过片上荧光体制造的晶片切割。

    High efficient phosphor-converted light emitting diode
    50.
    发明申请
    High efficient phosphor-converted light emitting diode 有权
    高效磷光转换发光二极管

    公开(公告)号:US20080006815A1

    公开(公告)日:2008-01-10

    申请号:US11822181

    申请日:2007-07-03

    IPC分类号: H01L29/06

    CPC分类号: H01L33/44 H01L33/50

    摘要: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

    摘要翻译: 公开了一种发光器件及其制造方法。 发光器件包括衬底,半导体发光结构,滤光层和荧光转换层。 该方法包括在衬底上形成半导体发光结构,在半导体发光结构上形成滤光层,并在滤光层上形成荧光转换层。