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公开(公告)号:US20250014595A1
公开(公告)日:2025-01-09
申请号:US18893605
申请日:2024-09-23
Applicant: Western Digital Technologies, Inc.
Inventor: Xiaoyong LIU , Zhanjie LI , Quang LE , Brian R. YORK , Cherngye HWANG , Kuok San HO , Hisashi TAKANO
Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
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42.
公开(公告)号:US20240428820A1
公开(公告)日:2024-12-26
申请号:US18367882
申请日:2023-09-13
Inventor: Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Hisashi TAKANO , Fan TUO , Hassan OSMAN , Nam Hai PHAM
IPC: G11B5/39
Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.
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公开(公告)号:US20240420732A1
公开(公告)日:2024-12-19
申请号:US18367877
申请日:2023-09-13
Inventor: Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Hisashi TAKANO , Fan TUO , Hassan OSMAN , Nam Hai PHAM
IPC: G11B5/31
Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.
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公开(公告)号:US20240005973A1
公开(公告)日:2024-01-04
申请号:US17854785
申请日:2022-06-30
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Susumu OKAMURA , Kuok San HO , Hisashi TAKANO , Randy G. SIMMONS
CPC classification number: G11C11/161 , H01L43/10 , G11B5/3906 , H01L43/08 , H01L43/04 , H01L43/06 , H01L27/222
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.
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公开(公告)号:US20230419990A1
公开(公告)日:2023-12-28
申请号:US18244555
申请日:2023-09-11
Applicant: Western Digital Technologies, Inc.
Inventor: Xiaoyong LIU , Zhanjie LI , Quang LE , Brian R. YORK , Cherngye HWANG , Kuok San HO , Hisashi TAKANO
CPC classification number: G11B5/3909 , G11B5/3967 , G11B5/3912 , G11B5/11 , G11B5/3932 , G11B2005/3996
Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
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46.
公开(公告)号:US20230186946A1
公开(公告)日:2023-06-15
申请号:US17552072
申请日:2021-12-15
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Xiaoyong LIU , Hongquan JIANG , Cherngye HWANG , Kuok San HO , Hisashi TAKANO
CPC classification number: G11B5/4893 , G11B5/00813
Abstract: The present disclosure is generally related to a tape drive including a tape head configured to read shingled data on a tape. The tape head comprises a first module head assembly aligned with a second module head assembly. Both the first and second module head assemblies comprises a plurality of data heads. Each data head comprises a write head, a first read head aligned with the write head, a second read head offset from the first read head in both a cross-track direction and a down-track direction, and a third read head offset from the first and/or second read heads in the cross-track and down-track directions. By utilizing three read heads within each data head, data can be read from a tape that has experienced tape dimensional stability, as at least one read head will be near a center of each data track of the tape.
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公开(公告)号:US20220013139A1
公开(公告)日:2022-01-13
申请号:US17029826
申请日:2020-09-23
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Xiaoyong LIU , Zhigang BAI , Zhanjie LI , Kuok San HO , Hisashi TAKANO
Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall layer, a first free layer, a gap layer, a second spin hall layer, a second free layer, and a second shield. The gap layer functions as an electrode and is disposed between the first spin hall layer and the second spin hall layer. Electrical lead connections are located about the first spin hall layer, the second spin hall layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).
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48.
公开(公告)号:US20210409601A1
公开(公告)日:2021-12-30
申请号:US16915730
申请日:2020-06-29
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Zhigang BAI , Xiaoyong LIU , Zhanjie LI , Kuok San HO , Rajeev NAGABHIRAVA
Abstract: Aspects of the present disclosure relate to optical devices and related methods that facilitate independent control of movement of lenses and image sensors in camera systems. In one example, an image sensor is movable independently of and relative to a lens, and the lens is movable independently of the image sensor. In one example, an optical device includes a lens, and an image sensor disposed below the lens. The image sensor is movable relative to the lens. The optical device includes a plurality of magnets disposed about the lens, a plurality of vertical coil structures coiled in one or more vertical planes, and one or more horizontal coil structures coiled in one or more horizontal planes. The plurality of vertical coil structures are configured to, when powered, move the image sensor relative to the lens. The one or more horizontal coil structures are configured to, when powered, move the lens.
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49.
公开(公告)号:US20210249038A1
公开(公告)日:2021-08-12
申请号:US17100199
申请日:2020-11-20
Inventor: Quang LE , Cherngye HWANG , Brian R. YORK , Thao A. NGUYEN , Zheng GAO , Kuok San HO , Pham Nam Hai
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
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公开(公告)号:US20200227075A1
公开(公告)日:2020-07-16
申请号:US16828901
申请日:2020-03-24
Applicant: Western Digital Technologies, Inc.
Inventor: Quang LE , Hongquan JIANG , Ning SHI , Alexander M. ZELTSER
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, a MAMR stack disposed between the trailing shield and the main pole, side shields surrounding at least a portion of the main pole, and a structure disposed between the side shields and the main pole at a media facing surface (MFS). The structure is fabricated from a material that is thermally conductive and electrically insulating/dissipative. The material has a thermal conductivity of at least 50 W/(m*K) and an electrical resistivity of at least 105 Ω*m. The structure helps dissipate joule heating generated from either the main pole or the MAMR stack into surrounding area without electrical shunting, leading to reduced heating or break-down induced failures.
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