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77 条记录 (耗时 0.026 秒)

    Nitride semiconductor substrate and semiconductor element built thereon
    41.
    发明授权
    Nitride semiconductor substrate and semiconductor element built thereon 有权
    氮化物半导体衬底和其上形成的半导体元件

    公开(公告)号：US07518154B2

    公开(公告)日：2009-04-14

    申请号：US10988889

    申请日：2004-11-15

    申请人： Koji Otsuka ,  Masataka Yanagihara ,  Nobuo Kaneko

    发明人： Koji Otsuka ,  Masataka Yanagihara ,  Nobuo Kaneko

    IPC分类号： H01L29/207

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/812

    摘要： A substrate system of the kind having a buffer region interposed between a silicon substrate proper and a nitride semiconductor region in order to make up for a difference in linear expansion coefficient therebetween. Electrodes are formed on the nitride semiconductor layer or layers in order to provide HEMTs or MESFETs. The buffer region is a lamination of a multiplicity of buffer layers each comprising a first, a second, and a third buffer sublayer of nitride semiconductors, in that order from the silicon substrate proper toward the nitride semiconductor region. The three sublayers of each buffer layer contain aluminum in varying proportions including zero. The aluminum proportion of the third buffer sublayer is either zero or intermediate that of the first buffer sublayer and that of the second. The low aluminum proportion of the third buffer sublayer serves to prevent two-dimensional electron gas from generating in the buffer region and hence to make this region sufficiently high in resistance to inhibit current leakage from the HEMTs or MESFETs.

    摘要翻译： 这种衬底系统具有介于硅衬底本体和氮化物半导体区域之间的缓冲区域，以补偿它们之间的线膨胀系数差。 为了提供HEMT或MESFET，在氮化物半导体层上形成电极。 缓冲区域是从硅衬底本身朝向氮化物半导体区域的顺序，分别包括氮化物半导体的第一，第二和第三缓冲子层的多个缓冲层的叠层。 每个缓冲层的三个子层含有不同比例的铝，包括零。 第三缓冲器子层的铝比例为零或与第一缓冲子层的第二缓冲层的铝比例为中等。 第三缓冲层的低铝比例用于防止在缓冲区域中产生二维电子气，从而使该区域具有足够高的电阻，以防止来自HEMT或MESFET的电流泄漏。

    Light-emitting semiconductor device
    42.
    发明授权
    Light-emitting semiconductor device 失效
    发光半导体器件

    公开(公告)号：US07456435B2

    公开(公告)日：2008-11-25

    申请号：US10994922

    申请日：2004-11-22

    申请人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

    发明人： Hidekazu Aoyagi ,  Koji Otsuka ,  Masahiro Sato

    IPC分类号： H01L27/15

    CPC分类号： H01L33/14 ,  H01L33/007 ,  H01L33/04

    摘要： A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.

    摘要翻译： 具有硅衬底的发光二极管，其上依次形成缓冲层，p型氮化物半导体层，有源层，n型氮化物半导体层和电流扩散层。 电流扩展层是交替需要次数布置的第一和第二子层的叠层。 由不同的化合物半导体组成，电流扩展层的交替子层产生用于提供二维气体效应的异质结。 电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低，使得电流有利地扩散在其中以提高发光效率。 金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。

    Semiconductor device
    43.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20070051938A1

    公开(公告)日：2007-03-08

    申请号：US10573458

    申请日：2005-08-25

    申请人： Koji Otsuka ,  Shinichi Iwakami

    发明人： Koji Otsuka ,  Shinichi Iwakami

    IPC分类号： H01L31/00

    CPC分类号： H01L29/872

    摘要： A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.

    摘要翻译： 在作为半导体层和半导体层之间的异质界面的界面附近产生二维载体。 两个凹部形成为从主面向界面延伸。 在凹部的底表面和侧面上形成由金属制成并与半导体层形成肖特基结的电极。 在凹部的底表面和侧表面上形成由金属制成并与半导体层具有低电阻接触并且与其低电阻接触的电极。 结果，提供了半导体器件，其中电极和半导体层之间的接触电阻降低，并且提高了高频特性。

    Noise-cancelling headphone
    45.
    发明授权
    Noise-cancelling headphone 有权

    公开(公告)号：US10204615B2

    公开(公告)日：2019-02-12

    申请号：US15808059

    申请日：2017-11-09

    申请人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

    发明人： Koji Otsuka ,  Yumi Shimazaki ,  Kozo Ando

    IPC分类号： G10K11/175 ,  G10K11/16 ,  G10K11/178 ,  H04R1/10 ,  H04R1/08

    摘要： A noise-cancelling headphone is provided that avoids an influence of the wind and prevents degradation in the sound quality of the reproduced sound output from a driver unit. The noise-cancelling headphone includes an ear piece including a housing unit having an interior and an exterior, a driver unit attached to the housing unit, and a microphone collecting external sounds at the exterior of the housing unit. The housing unit includes an accommodating portion accommodating the microphone and a sound collecting hole establishing the communication between the accommodating portion and the exterior of the housing unit. The accommodating portion is disposed in an upper portion of the housing unit of the noise-cancelling headphone when worn by the user. The sound collecting hole is open toward the upper side of the housing unit of the noise-cancelling headphone when worn by the user.

    Air supply tube, air supply device, and image forming apparatus
    47.
    发明授权
    Air supply tube, air supply device, and image forming apparatus 有权
    供气管，供气装置和成像装置

    公开(公告)号：US08759766B2

    公开(公告)日：2014-06-24

    申请号：US13440538

    申请日：2012-04-05

    申请人： Yasunori Momomura ,  Kazuki Inami ,  Yuki Nagamori ,  Koji Otsuka ,  Masafumi Kudo

    发明人： Yasunori Momomura ,  Kazuki Inami ,  Yuki Nagamori ,  Koji Otsuka ,  Masafumi Kudo

    IPC分类号： H01T19/00

    CPC分类号： G03G15/0291 ,  G03G21/206

    摘要： Provided is an air supply tube including an inlet port that takes in air, an outlet port that is arranged opposite a portion of an elongated target structure in a longitudinal direction, to which air taken in from the inlet port is to be supplied, and has an elongated opening shape, a channel portion in which a channel space for allowing air to flow between the inlet port and the outlet port is formed, and plural suppressing portions that suppress the flow of air, wherein the plural suppressing portions include at least a most downstream suppressing portion, a first upstream suppressing portion that is provided in a part initially located on the upstream side in the air flow direction, and a gap regulating portion that forms an extended gap at the same interval.

    摘要翻译： 提供一种空气供给管，其具有吸入空气的入口端口，与长度方向的细长目标结构​​体的一部分相对配置的出口，从入口端口吸入的空气被供给到该空气供给管， 细长的开口形状，形成有用于允许空气在入口和出口之间流动的通道空间的通道部分，以及抑制空气流动的多个抑制部分，其中多个抑制部分至少包括最多 下游抑制部分，设置在最初位于空气流动方向上游侧的部分中的第一上游抑制部分和以相同间隔形成延伸间隙的间隙限制部分。

    Charging device, image forming apparatus, and potential control plate
    48.
    发明授权
    Charging device, image forming apparatus, and potential control plate 有权
    充电装置，成像装置和电位控制板

    公开(公告)号：US08750761B2

    公开(公告)日：2014-06-10

    申请号：US13238628

    申请日：2011-09-21

    申请人： Yuki Nagamori ,  Koji Otsuka ,  Kuniaki Tanaka ,  Arichika Tanaka

    发明人： Yuki Nagamori ,  Koji Otsuka ,  Kuniaki Tanaka ,  Arichika Tanaka

    IPC分类号： G03G15/02

    CPC分类号： G03G15/0291 ,  G03G2215/027

    摘要： A charging device includes a discharge electrode that extends along an axial direction of a member to be charged; and a potential control plate disposed between the member to be charged and the discharge electrode and curved along a peripheral surface of the member to be charged. The potential control plate includes three or more structural lines that are arranged in a circumferential direction of the member to be charged and that linearly extend along the axial direction, and connecting portions arranged in the axial direction, each connecting portion connecting two or more of the three or more structural lines to each other, the two or more structural lines being next to each other in the circumferential direction. The structural lines connected by one of the connecting portions and those connected by another one of the connecting portions are at least partly different from each other.

    摘要翻译： 充电装置包括：沿着待充电部件的轴向延伸的放电电极; 以及电位控制板，设置在待充电部件与放电电极之间，并沿着被充电部件的周面弯曲。 电位控制板包括沿着轴向方向直线延伸的沿轴向方向配置的三条以上的结构线，以及沿轴向配置的连接部，将连接两个以上的连接部 三个以上的结构线彼此相邻，两个或更多个结构线在圆周方向上彼此相邻。 由一个连接部分连接的结构线和由另一个连接部分连接的结构线至少部分地彼此不同。

    Bag with pouring spout
    49.
    发明授权
    Bag with pouring spout 失效
    袋倾吐吐出

    公开(公告)号：US08002468B2

    公开(公告)日：2011-08-23

    申请号：US11995158

    申请日：2006-05-15

    申请人： Koji Otsuka ,  Wakako Yoshimura ,  Yasunori Honzawa

    发明人： Koji Otsuka ,  Wakako Yoshimura ,  Yasunori Honzawa

    IPC分类号： B65D30/16 ,  B65D30/08

    CPC分类号： B65D75/5866 ,  B65D75/5822 ,  Y10S383/906

    摘要： There is provided a bag with a pouring spout that can surely improve opening properties and shape retention of a spout port part without the need to render the spout port part bulky, can prevent clogging of the spout port part caused by flexing of the spout port part, and can reliably and easily spout the contents of the bag. The bag with a pouring spout comprises a narrow-width spout port part provided at one end of a laminated film bag, characterized in that in the region of the spout port part, a tape shaped sheet material, which has been cut into a desired length, is applied to the inner surface of at least one of the laminated films provided on both respective sides of the bag.

    摘要翻译： 提供了一种具有倾倒口的袋子，其可以确保地改善喷嘴端口部件的开口性能和形状保持性，而不需要使出口部分膨胀，从而可以防止由于出口部分的弯曲而引起的喷口端口部分的堵塞 ，并能够可靠且容易地喷出袋的内容物。 具有倾倒口的袋包括设置在层压膜袋的一端的窄宽度喷口部，其特征在于，在所述喷口部分的区域中，已经切割成所需长度的带状片材 被施加到设置在袋的两侧的层压膜中的至少一个的内表面。