公开(公告)号：US06890779B2

公开(公告)日：2005-05-10

申请号：US10936499

申请日：2004-09-09

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/285 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/343 ,  H01L21/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US20050029539A1

公开(公告)日：2005-02-10

申请号：US10936499

申请日：2004-09-09

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L21/285 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/343

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US06791120B2

公开(公告)日：2004-09-14

申请号：US10394260

申请日：2003-03-24

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L2924

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US07629623B2

公开(公告)日：2009-12-08

申请号：US12139807

申请日：2008-06-16

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L27/15 ,  H01L29/40

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US20080179601A1

公开(公告)日：2008-07-31

申请号：US11928077

申请日：2007-10-30

申请人： Tadao TODA ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao TODA ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

摘要翻译： 提供一种制造能够降低氮化物类半导体衬底等的氮面与电极之间的接触电阻的氮化物系半导体器件的方法。 这种制造氮化物基半导体器件的方法包括以下步骤：蚀刻由具有纤锌矿结构的n型氮化物基半导体层或氮化物基半导体衬底构成的第一半导体层的背面，然后形成n 在第一半导体层的蚀刻后表面上的电极。

公开(公告)号：US20080069162A1

公开(公告)日：2008-03-20

申请号：US11927905

申请日：2007-10-30

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura

IPC分类号： H01S5/323

CPC分类号： H01S5/32341 ,  B82Y20/00 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04

摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

公开(公告)号：US20060011946A1

公开(公告)日：2006-01-19

申请号：US10506100

申请日：2003-02-28

申请人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

发明人： Tadao Toda ,  Tsutomu Yamaguchi ,  Masayuki Hata ,  Yasuhiko Nomura ,  Masayuki Shouno ,  Yuuji Hishida ,  Keiichi Yodoshi ,  Daijiro Inoue ,  Takashi Kano ,  Nobuhiko Hayashi

IPC分类号： H01L27/10

CPC分类号： H01S5/32341 ,  H01S5/22 ,  H01S5/2219

摘要： A nitride semiconductor laser element capable of controlling the lateral confinement of light with a good reproducibility, the nitride semiconductor element comprising an n-type cladding layer (3), an MQW light emitting layer (4) formed on the cladding layer (3), a p-type cladding layer (5) and a p-type contact layer (6) formed on the light emitting layer (4), and an ion implantation light absorbing layer (7) formed, by introducing carbon, in regions other than a current passing region (8) in the cladding layer (5) and the contact layer (6).

摘要翻译： 一种氮化物半导体激光元件，其能够以良好的再现性控制光的横向限制，所述氮化物半导体元件包括n型包覆层（3），形成在所述包层（3）上的MQW发光层（4） 形成在发光层（4）上的p型覆盖层（5）和p型接触层（6），以及通过引入碳而形成的离子注入光吸收层（7） 包覆层（5）和接触层（6）中的电流通过区域（8）。

公开(公告)号：US08275013B2

公开(公告)日：2012-09-25

申请号：US12137214

申请日：2008-06-11

申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Hiroki Ohbo

发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Hiroki Ohbo

IPC分类号： H01S5/00

CPC分类号： H01S5/4043 ,  H01L2224/32145 ,  H01S5/0202 ,  H01S5/0216 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/4087

摘要： A semiconductor laser device includes a first semiconductor laser element formed on a surface of a first conductive type substrate, obtained by stacking a first conductive type first semiconductor layer, a first active layer and a second conductive type second semiconductor layer successively from the first conductive type substrate and a second semiconductor laser element obtained by successively stacking a first conductive type third semiconductor layer, a second active layer and a second conductive type fourth semiconductor layer, wherein the third semiconductor layer is electrically connected to the first semiconductor layer by bonding a side of the third semiconductor layer to the surface of the first conductive type substrate through a fusible layer.

摘要翻译： 半导体激光器件包括：第一半导体激光器元件，其形成在第一导电型基板的表面上，所述第一半导体激光元件通过从第一导电类型连续地层叠第一导电类型的第一半导体层，第一有源层和第二导电类型的第二半导体层而获得; 基板和通过连续堆叠第一导电类型的第三半导体层，第二有源层和第二导电型第四半导体层而获得的第二半导体激光元件，其中第三半导体层通过将第 第三半导体层通过可熔层提供到第一导电类型基板的表面。

公开(公告)号：US08017957B2

公开(公告)日：2011-09-13

申请号：US12685580

申请日：2010-01-11

申请人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

发明人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

IPC分类号： H01L29/201

CPC分类号： G11B7/1275 ,  B82Y20/00 ,  G11B2007/0006 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06226 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/3436 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2301/173 ,  H01L2924/00014

摘要： A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

摘要翻译： 通过多个熔融层将辅助基板，蓝紫色半导体激光器件，绝缘层和红色半导体激光器件依次层叠在支撑构件上。 绝缘层堆叠在蓝紫色半导体激光器件的n侧焊盘电极上，并且在绝缘层上形成导电层。 红色半导体激光器件通过熔融层堆叠在导电层上。 导电层与红色半导体激光器件的p侧焊盘电极电连接。 蓝紫色半导体激光器件的n侧焊盘电极和红色半导体激光器件的n侧焊盘电极彼此电连接。

公开(公告)号：US07655953B2

公开(公告)日：2010-02-02

申请号：US11215129

申请日：2005-08-31

申请人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

发明人： Daijiro Inoue ,  Masayuki Hata ,  Yasuyuki Bessho

IPC分类号： H01L29/201

CPC分类号： G11B7/1275 ,  B82Y20/00 ,  G11B2007/0006 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06226 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2222 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/3436 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2301/173 ,  H01L2924/00014

摘要： A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.

摘要翻译： 通过多个熔融层将辅助基板，蓝紫色半导体激光器件，绝缘层和红色半导体激光器件按顺序堆叠在支撑构件上。 绝缘层堆叠在蓝紫色半导体激光器件的n侧焊盘电极上，并且在绝缘层上形成导电层。 红色半导体激光器件通过熔融层堆叠在导电层上。 导电层与红色半导体激光器件的p侧焊盘电极电连接。 蓝紫色半导体激光器件的n侧焊盘电极和红色半导体激光器件的n侧焊盘电极彼此电连接。