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    SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS
    3.
    发明申请
    SEMICONDUCTOR LASER APPARATUS AND OPTICAL APPARATUS 有权
    半导体激光装置和光学装置

    公开(公告)号：US20090252189A1

    公开(公告)日：2009-10-08

    申请号：US12486240

    申请日：2009-06-17

    申请人： Daijiro INOUE ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Daijiro INOUE ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01S3/00

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00014

    摘要： A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

    摘要翻译： 半导体激光装置包括发射蓝紫色激光束的第一半导体激光装置，发射红色激光束的第二半导体激光装置和导电封装体。 第一半导体激光器件具有p侧焊盘电极和n侧电极。 第一半导体激光器件的p侧焊盘电极和n侧电极与封装主体电隔离。 第一半导体激光器件的p侧焊盘电极与产生正电位的驱动电路连接，而其n侧电极与产生负电位的直流电源连接。

    Semiconductor laser apparatus and optical apparatus
    4.
    发明授权
    Semiconductor laser apparatus and optical apparatus 失效
    半导体激光装置及光学装置

    公开(公告)号：US07561610B2

    公开(公告)日：2009-07-14

    申请号：US11078626

    申请日：2005-03-14

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura

    IPC分类号： H01S3/00 ,  H01L31/12

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087 ,  H01L2924/00014

    摘要： A semiconductor laser apparatus comprises a first semiconductor laser device that emits a blue-violet laser beam, a second semiconductor laser device that emits a red laser beam, and a conductive package body. The first semiconductor laser device has a p-side pad electrode and an n-side electrode. The p-side pad electrode and n-side electrode of the first semiconductor laser device are electrically isolated from the package body. The p-side pad electrode of the first semiconductor laser device is connected with a drive circuit that generates a positive potential, while the n-side electrode thereof is connected with a dc power supply that generates a negative potential.

    摘要翻译： 半导体激光装置包括发射蓝紫色激光束的第一半导体激光装置，发射红色激光束的第二半导体激光装置和导电封装体。 第一半导体激光器件具有p侧焊盘电极和n侧电极。 第一半导体激光器件的p侧焊盘电极和n侧电极与封装主体电隔离。 第一半导体激光器件的p侧焊盘电极与产生正电位的驱动电路连接，而其n侧电极与产生负电位的直流电源连接。

    Semiconductor laser apparatus
    5.
    发明授权
    Semiconductor laser apparatus 失效
    半导体激光装置

    公开(公告)号：US07551659B2

    公开(公告)日：2009-06-23

    申请号：US11081726

    申请日：2005-03-17

    申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4043 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

    摘要： A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to amount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.

    摘要翻译： 红色半导体激光器件中的p型焊盘电极和第一端子通过导线连接。 红外半导体激光器件中的p型焊盘电极和第二端子通过导线连接。 蓝紫色半导体激光器件中的p电极和第三端子通过导线连接。 蓝紫色半导体激光器件中的n电极是导电量的。 红外半导体激光器件中的n电极和安装件通过导线连接，而红外半导体激光器件中的n电极和安装座通过导线连接。 安装座内有第四个终端。

    Semiconductor laser apparatus and method of manufacturing the same
    10.
    发明授权
    Semiconductor laser apparatus and method of manufacturing the same 失效
    半导体激光装置及其制造方法

    公开(公告)号：US07535945B2

    公开(公告)日：2009-05-19

    申请号：US11093024

    申请日：2005-03-30

    申请人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    发明人： Yasuyuki Bessho ,  Masayuki Hata ,  Daijiro Inoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/4025 ,  H01S5/4087

    摘要： Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

    摘要翻译： 第二和第三p侧焊盘电极形成在第一p侧焊盘电极两侧的蓝紫色半导体激光器件的绝缘膜上。 第二p侧焊盘电极和第三p侧焊盘电极彼此分开地形成。 焊接膜分别形成在第二和第三p侧焊盘电极的上表面上。 红色半导体激光器件的第四p侧焊盘电极被粘合到第二p侧焊盘电极上，其中夹有相应的焊料膜。 红外半导体激光器件的第五p侧焊盘电极被粘合到第三p侧焊盘电极上，其中夹有相应的焊料膜。 第二和第三p侧焊盘电极彼此分开地形成，使得第四和第五p侧焊盘电极彼此电隔离。