公开(公告)号：US06756723B2

公开(公告)日：2004-06-29

申请号：US10034322

申请日：2002-01-03

申请人： Mamoru Fukushima ,  Yasuo Kobayashi ,  Soichiro Ogawa

发明人： Mamoru Fukushima ,  Yasuo Kobayashi ,  Soichiro Ogawa

IPC分类号： H01J6100

CPC分类号： H01J9/28 ,  H01J61/045 ,  H01J61/366 ,  H01J61/72

摘要： A fluorescent lamp having a stem provided with first and second lead wires for energization of an electrode and an electrically-insulating member provided therein with a first hole and a second hole larger in cross-sectional area than said second lead wire. The first and second lead wires are inserted in the first and second holes of the electrically-insulating member, respectively, and an outer diameter of a glass envelope of the fluorescent lamp is not smaller than 13 mm and not larger than 29 mm.

摘要翻译： 一种荧光灯，具有设置有用于激励电极的第一和第二引线以及设置在其中的电绝缘部件的杆，所述第一和第二引线具有比所述第二引线更大的横截面积的第一孔和第二孔。 第一和第二引线分别插入电绝缘构件的第一和第二孔中，荧光灯的玻璃外壳的外径不小于13mm且不大于29mm。

公开(公告)号：US4861282A

公开(公告)日：1989-08-29

申请号：US280901

申请日：1988-12-07

申请人： Yasuo Kobayashi ,  Masahiko Endo

发明人： Yasuo Kobayashi ,  Masahiko Endo

IPC分类号： H01R13/518 ,  H01R13/52 ,  H02G3/22

CPC分类号： H01R13/5213 ,  B60R16/0239 ,  H01R13/518 ,  Y10S439/942

摘要： A waterproof connecting structure for a connector in a hole of a panel is disclosed which comprises connector elements connected to electric cords, respectively, and fitted to each other in an opposed manner; a waterproof grommet provided near one of the connector elements; a connector holder which is secured in the hole in a watertight manner with a first seal on the peripheral portion of the holder and conjoined at one side of the holder to the other one of the connector elements and has an opening and grommet fitting portions at the other side of said holder; and a cover for closing the opening with a second seal in a watertight manner.

摘要翻译： 公开了一种用于面板孔中的连接器的防水连接结构，其包括分别连接到电线的连接器元件并以相对的方式彼此配合; 设置在靠近其中一个连接器元件的防水索环; 连接器保持器，其以水密方式固定在孔中，在保持器的周边部分上具有第一密封并且在保持器的一侧连接到另一个连接器元件，并且在该位置处具有开口和索环配合部分 所述支架的另一侧; 以及用于以水密方式用第二密封件封闭开口的盖。

公开(公告)号：US09177846B2

公开(公告)日：2015-11-03

申请号：US12526460

申请日：2008-02-04

申请人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

发明人： Kohei Kawamura ,  Yasuo Kobayashi ,  Toshihisa Nozawa ,  Kiyotaka Ishibashi

IPC分类号： H01L21/3065 ,  C23C16/513 ,  H01L21/683 ,  C23C16/458 ,  H01L21/687

CPC分类号： H01L21/68742 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735 ,  H01L21/6875

摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

摘要翻译： 提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。 保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

公开(公告)号：US20130130513A1

公开(公告)日：2013-05-23

申请号：US13811012

申请日：2011-07-20

申请人： Kotaro Miyatani ,  Takenao Nemoto ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Toshihisa Nozawa

发明人： Kotaro Miyatani ,  Takenao Nemoto ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Toshihisa Nozawa

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  C23C16/342 ,  C23C16/511 ,  H01L21/02112 ,  H01L21/76801

摘要： The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride.

摘要翻译： 用于通过等离子体CVD法形成半导体器件的层间绝缘层的层间绝缘层形成方法包括：将衬底运送到减压处理容器中; 向与衬底隔开的第一空间供应等离子体产生气体; 激发第一空间中的等离子体产生气体; 以及将包含至少包含氢基团或烃基的硼化合物的原料气体供给到所述第一空间和所述基板之间的第二空间。 此外，半导体器件通过具有包括硼，碳和氮的非晶结构的层间绝缘层在多层中互连，其中在层间绝缘层中，烃基或烷基氨基混合在非晶结构中，包括 六方氮化硼和立方氮化硼。

公开(公告)号：US08398813B2

公开(公告)日：2013-03-19

申请号：US11980613

申请日：2007-10-31

申请人： Yasuo Kobayashi ,  Masao Yoshioka

发明人： Yasuo Kobayashi ,  Masao Yoshioka

IPC分类号： C23F1/00

CPC分类号： H01L21/02052 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/67115

摘要： The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28. Additionally, the apparatus includes a low-temperature processing chamber 207 allowing NF3 gas to react with the native oxide film at a low temperature and a heating chamber 209 for heating the product film, independently.

摘要翻译： 本发明提供了一种处理装置和处理方法，它们都可以进行低温处理，以使活性气体物质与待处理物体上的氧化膜反应以形成产物膜和加热过程 将物体加热到预定温度，以连续蒸发产物膜。 该处理装置12设置有能够进入物体W和透明窗28之间的间隙并且也从间隙排出的遮蔽板103。 在屏蔽板103闭合以截断来自透明窗28的照射热的条件下，通过使NF 3气体的活性气体种类与在低温条件下的物体上的自然氧化膜反应形成产物膜 。 之后，在闭合屏蔽板103时，通过从加热灯36照射的热量通过透明窗28向产品膜施加热而去除自然氧化膜。另外，该装置包括一个允许NF 3气体的低温处理室207 在低温下与天然氧化膜反应，并且加热室209独立地加热产物膜。

公开(公告)号：US08349370B2

公开(公告)日：2013-01-08

申请号：US12663598

申请日：2008-06-06

申请人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

发明人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

IPC分类号： A61K36/00 ,  A61K36/87

CPC分类号： A61K36/22 ,  A23K20/158

摘要： The present invention provides a bloat controlling agent for a ruminant, comprising cashew nut shell liquid.

摘要翻译： 本发明提供了一种用于反刍动物的膨胀控制剂，其包含腰果壳液体。

公开(公告)号：US20110318919A1

公开(公告)日：2011-12-29

申请号：US13138242

申请日：2010-01-22

申请人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

发明人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

IPC分类号： H01L21/768 ,  H01L21/263

CPC分类号： H01L21/32051 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/2855 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76864

摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。 绝缘层包括碳氟化合物（CFx）膜。 在退火步骤之后通过高温溅射工艺形成阻挡层。

公开(公告)号：US07803705B2

公开(公告)日：2010-09-28

申请号：US10585994

申请日：2005-01-13

申请人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

发明人： Yasuo Kobayashi ,  Kenichi Nishizawa ,  Takatoshi Kameshima ,  Takaaki Matsuoka

IPC分类号： H01L21/4763 ,  H01L21/31

CPC分类号： H01L21/76835 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3143 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76832

摘要： A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.

摘要翻译： 由CF制成的电介质膜（91）沉积在基板上。 在电介质膜（91）上形成包含SiCN膜（93）的保护层。 作为由SiCO制成的硬掩模的膜（94）通过含有活性物质的硅，碳和氧的等离子体沉积在保护层上。 当形成保护层时，通过含有活性物质的硅和碳的等离子体在电介质膜（91）上沉积SiC膜（92），然后将SiCN膜（93）沉积在SiC膜（92）上， 通过含有硅，碳和氮的活性物质的等离子体。

公开(公告)号：US20100183755A1

公开(公告)日：2010-07-22

申请号：US12663598

申请日：2008-06-06

申请人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

发明人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

IPC分类号： A61K36/185

CPC分类号： A61K36/22 ,  A23K20/158

摘要： The present invention provides a bloat controlling agent for a ruminant, comprising cashew nut shell liquid.

摘要翻译： 本发明提供了一种用于反刍动物的膨胀控制剂，其包含腰果壳液体。

公开(公告)号：US07704893B2

公开(公告)日：2010-04-27

申请号：US10568461

申请日：2004-08-12

申请人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

发明人： Yasuo Kobayashi ,  Kohei Kawamura ,  Tadahiro Ohmi ,  Akinobu Teramoto ,  Tatsuya Sugimoto ,  Toshiro Yamada ,  Kimiaki Tanaka

IPC分类号： H01L21/31

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/3146

摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

摘要翻译： 本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。 本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。