公开(公告)号：US20100093187A1

公开(公告)日：2010-04-15

申请号：US12577455

申请日：2009-10-12

申请人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

发明人： Kwangduk Douglas Lee ,  Takashi Morii ,  Yoichi Suzuki ,  Sudha Rathi ,  Martin Jay Seamons ,  Deenesh Padhi ,  Bok Hoen Kim ,  Cynthia Pagdanganan

IPC分类号： H01L21/312

CPC分类号： H01L21/3146 ,  C23C16/26 ,  C23C16/45523 ,  C23C16/5096 ,  H01L21/3141

摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.

摘要翻译： 提供了在基板上沉积无定形碳层的方法和装置。 在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自 氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成 基底上的共形无定形碳层。

公开(公告)号：US07038823B2

公开(公告)日：2006-05-02

申请号：US11190921

申请日：2005-07-28

申请人： Yoshinori Morimoto ,  Tadashi Masuda ,  Tsuyoshi Tanabe ,  Kiyoshi Kondou ,  Kenichi Saito ,  Yoichi Suzuki

发明人： Yoshinori Morimoto ,  Tadashi Masuda ,  Tsuyoshi Tanabe ,  Kiyoshi Kondou ,  Kenichi Saito ,  Yoichi Suzuki

IPC分类号： G02B26/08

CPC分类号： G02B26/123 ,  G02B26/126

摘要： A first fθ lens is arranged to form an inclination angle α1 to a main scanning plane. A second fθ lens is arranged to form an inclination angle α2. In order to determine the inclination angles α1 and α2, curvature amounts of scanning lines generated on a scanned surface are measured when the fθ lenses are independently inclined one at a time at a minute angle. Change rates K1 and K2 are obtained from the measured curvature amounts and the minute angles. The inclination angles α1 and α2 are determined such that |K1α1+K2α2| is no more than a certain value.

摘要翻译： 第一透镜被布置成与主扫描平面形成倾斜角α1。 第二个透镜被配置成形成倾角α2。 为了确定倾斜角α1和α2，当最高透镜独立地以一个微小的角度一次倾斜时，测量在扫描表面上产生的扫描线的曲率量。 从测量的曲率量和微小角度获得变化率K 1和K 2。 确定倾角α1和α2，使得| K 1alpha1 + K 2alpha2 | 只不过是一定的价值。

公开(公告)号：US20060023056A1

公开(公告)日：2006-02-02

申请号：US11192180

申请日：2005-07-29

申请人： Yoichi Suzuki ,  Tadashi Masuda ,  Yoshinori Morimoto ,  Kenichi Saito

发明人： Yoichi Suzuki ,  Tadashi Masuda ,  Yoshinori Morimoto ,  Kenichi Saito

IPC分类号： B41J2/385

CPC分类号： G02B5/205 ,  B41J2/471 ,  G02B26/124

摘要： The optical scanning apparatus includes a light amount reducing filter such as a neutral density filter which has transmittance ηnd satisfying an expression ηnd=(W1/W0)/(ηAOM×ηref×ηtra) and a light amount reducing function using absorption or reflection and which is disposed between a laser light source and an AOM on an optical path of laser light beam. In the expression, W0 denotes the amount of light emitted from the laser light source, W1 denotes the amount of light required for recording on a recording medium, ηAOM denotes diffraction efficiency in the AOM, ηref denotes a sum of reflectances of reflective optical elements located between the laser light source and a surface to be scanned, of the recording medium, and ηtra denotes a sum of transmittances of transmissive optical elements located between the laser light source and the surface to be scanned, other than transmittance of the neutral density filter.

摘要翻译： 光学扫描装置包括一个光量减少滤光器，例如中性密度滤光片，其具有满足表达式η（N）的透光率η（＆lt; 1＆lt; 1＆lt; 使用吸光度的光量减少函数和/或/ 或反射，并且其设置在激光光束的光路上的激光源和AOM之间。 在表达式中，W 表示从激光源发射的光的量，W 1表示在记录介质上记录所需的光量，eta _{表示AOM中的衍射效率，η表示记录介质中位于激光光源和待扫描表面之间的反射光学元件的反射率之和，以及 eta 表示除了中性密度滤光器的透射率之外，位于激光光源和待扫描表面之间的透射光学元件的透射率之和。}

公开(公告)号：US20060017797A1

公开(公告)日：2006-01-26

申请号：US11167196

申请日：2005-06-28

申请人： Yoshinori Morimoto ,  Tsuyoshi Tanabe ,  Kenichi Saito ,  Yoichi Suzuki ,  Tadashi Masuda ,  Kiyoshi Kondou

发明人： Yoshinori Morimoto ,  Tsuyoshi Tanabe ,  Kenichi Saito ,  Yoichi Suzuki ,  Tadashi Masuda ,  Kiyoshi Kondou

IPC分类号： B41J2/435

CPC分类号： H04N1/4005 ,  H04N1/40056

摘要： A semiconductor laser driving circuit for driving a semiconductor laser as an exposure light source is used in an image recording apparatus for recording an image using a light beam from the laser. The light beam emitted from the laser is subjected to pulse modulation in correspondence with a command signal. The circuit includes an error amplifier for amplifying a difference between the command signal and a signal fed back from the laser to output an output signal, a diode and a resistor connected in series between an input terminal and an output terminal of the error amplifier and a driver for driving the laser based on the output signal.

摘要翻译： 用于驱动作为曝光光源的半导体激光器的半导体激光器驱动电路用于使用来自激光器的光束来记录图像的图像记录装置。 从激光发射的光束对应于指令信号进行脉冲调制。 该电路包括误差放大器，用于放大指令信号和从激光器反馈的信号之间的差异，以输出串联在误差放大器的输入端和输出端之间的输出信号，二极管和电阻器，以及 基于输出信号驱动激光的驱动器。

公开(公告)号：US06855644B2

公开(公告)日：2005-02-15

申请号：US10004489

申请日：2001-10-23

申请人： Yoichi Suzuki ,  Tsutomu Shimayama

发明人： Yoichi Suzuki ,  Tsutomu Shimayama

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/31 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/02131 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629 ,  H01L21/76807

摘要： The present invention provides a deposition method and deposition apparatus capable of forming a fluorine-containing silicon inorganic insulating film of stable film properties and a method of manufacturing a semiconductor device. Deposition apparatus 10 comprises parallel plate type electrodes 16, 22 arranged within reaction chamber 12, gas supply sources 20, 32, 34 for feeding process gas containing SiH4, SiF4 and oxygen source substance into reaction chamber 12, valves 36, 38, 40, gas mixing chamber 28 and power source 44 that supplies RF power for generating the plasma of the process gas. In this deposition apparatus 10, power source 44 is capable of supplying RF power of at least 1000 Watts to parallel plate type electrodes 16, 22. In this apparatus 10, fluorine-containing silicon oxide film is deposited on wafer 14 by generating the plasma of process gas containing SiH4, SiF4 and N2O.

摘要翻译： 本发明提供能够形成稳定膜性能的含氟硅无机绝缘膜的沉积方法和沉积装置以及半导体装置的制造方法。 沉积装置10包括布置在反应室12内的平行板型电极16,22，用于将含有SiH 4，SiF 4和氧源物质的工艺气体进料到反应室12中的气体供给源20,32,34，阀36,38,40，气体 混合室28和提供RF功率以产生处理气体的等离子体的电源44。 在该沉积装置10中，电源44能够向平行板状电极16,22提供至少1000瓦的RF功率。在该装置10中，通过产生含氟氧化硅膜的等离子体 含有SiH4，SiF4和N2O的工艺气体。

公开(公告)号：US06346475B1

公开(公告)日：2002-02-12

申请号：US09689838

申请日：2000-10-13

申请人： Yoichi Suzuki ,  Naoki Oka

发明人： Yoichi Suzuki ,  Naoki Oka

IPC分类号： H01L214763

CPC分类号： H01L21/7682 ,  H01L21/31111

摘要： A silicon nitride film is formed on a substrate so as to cover semiconductor devices. After having formed more than one layer of conducting members and interlayer dielectric portion, such as silicon oxide interlayer films on the silicon nitride film, an opening is formed in said interlayer dielectric portion so as to reach the silicon nitride film. The substrate with thus defined opening is etched in an etching solution containing hydrogen fluoride acid therein to remove away the silicon oxide interlayer portion. As the silicon oxide interlayer portion is etched in the solution, this forms electrical interconnection that are not surrounded with any oxides. As the silicon nitride film works as an etching stopper layer in this etching above, the semiconductor devices are protected against the etching process.

摘要翻译： 在衬底上形成氮化硅膜以覆盖半导体器件。 在氮化硅膜上形成多层导电构件和层间电介质部分（例如氧化硅中间膜）之后，在所述层间电介质部分中形成开口以到达氮化硅膜。 具有如此限定的开口的衬底在其中含有氟化氢酸的蚀刻溶液中被蚀刻以除去氧化硅夹层部分。 由于在溶液中蚀刻氧化硅中间层部分，这形成未被任何氧化物包围的电互连。 由于氮化硅膜在上述蚀刻中用作蚀刻停止层，因此保护半导体器件免受蚀刻处理。

公开(公告)号：US06322510B1

公开(公告)日：2001-11-27

申请号：US09399276

申请日：1999-09-17

申请人： Hiroaki Kataoka ,  Yoichi Suzuki

发明人： Hiroaki Kataoka ,  Yoichi Suzuki

IPC分类号： A61B812

CPC分类号： G01S15/8981 ,  G01S7/5206

摘要： In order to capture an image representing pulsation strength in moving velocity of an echo source, a moving velocity V of the echo source is detected based on the Doppler shift in an ultrasonic echo, and a pulsation strength P in the moving velocity V is detected at a pulsation detecting means 132 by a calculation that employs a value Vn of the moving velocity V at a current time phase and a value Vo of the moving velocity V at a past time phase.

摘要翻译： 为了捕获表示回波源的移动速度的脉动强度的图像，基于超声波回波中的多普勒频移检测回波源的移动速度V，并且检测移动速度V中的脉动强度P 通过采用当前时间相位下的移动速度V的值Vn和过去时间相位下的移动速度V的值Vo的计算的脉动检测装置132。

公开(公告)号：US6037638A

公开(公告)日：2000-03-14

申请号：US34316

申请日：1998-03-04

申请人： Mitsuhiro Abe ,  Yoichi Suzuki ,  Makoto Segawa

发明人： Mitsuhiro Abe ,  Yoichi Suzuki ,  Makoto Segawa

IPC分类号： H01L21/8244 ,  H01L27/11 ,  H01L29/76

CPC分类号： H01L27/11 ,  H01L27/1104 ,  H01L27/1112 ,  Y10S257/903 ,  Y10S257/904

摘要： The gates 31, 32, 33 and 34 of a pair of driver transistors Q1, Q2 and a pair of address-selecting transistors Q3, Q4 are arranged so as to be perpendicular to bit lines BL, /BL. The drain regions of the driver transistors Q1, Q2 forming a flip-flop are arranged point-symmetrically around an element isolating region. The source regions of the driver transistors Q1, Q2 are arranged point-symmetrically. Similarly, the address-selecting transistors Q3, Q4 are arranged point-symmetrically. An upper wiring layer connected to two gates of the transistors are arranged so as to be perpendicular to the bit lines BL, /BL. Two Vss lines are formed in the same layer as that for the bit lines BL, /BL and arranged on both sides of the bit lines BL, /BL in parallel thereto. The Vss lines are connected to the source regions of the driver transistors. With this construction, the bi-stability of a memory cell used for a semiconductor memory device, such as a SRAM, is improved, so that the low-voltage operation and the hold characteristic are improved and software errors are removed. In addition, the aspect ratio of the cell is changed from the aspect ratio of a conventional, longitudinally extending cell to the aspect ratio of a laterally extending cell, so that the lengths of the bit lines are decreased to achieve a high speed operation.

摘要翻译： 一对驱动晶体管Q1，Q2和一对地址选择晶体管Q3，Q4的栅极31,32,33和34被布置成垂直于位线BL / BL。 形成触发器的驱动晶体管Q1，Q2的漏极区域围绕元件隔离区域对称布置。 驱动晶体管Q1，Q2的源极区域对称布置。 类似地，地址选择晶体管Q3，Q4被点对称地排列。 连接到晶体管的两个栅极的上部布线层被布置成垂直于位线BL / BL。 两条Vss线形成在与位线BL，/ BL相同的层中，并且平行布置在位线BL，/ BL两侧。 Vss线连接到驱动晶体管的源极区域。 利用这种结构，用于诸如SRAM的半导体存储器件的存储单元的双稳态性得到改善，从而提高了低电压操作和保持特性，并且消除了软件错误。 此外，单元的纵横比从常规的纵向延伸单元的纵横比变化到横向延伸单元的纵横比，从而减小位线的长度以实现高速操作。

公开(公告)号：US5707944A

公开(公告)日：1998-01-13

申请号：US544206

申请日：1995-10-17

申请人： Atsushi Yokouchi ,  Hideki Koizumi ,  Kenichi Iso ,  Michiharu Naka ,  Toshiaki Endo ,  Yoichi Suzuki

发明人： Atsushi Yokouchi ,  Hideki Koizumi ,  Kenichi Iso ,  Michiharu Naka ,  Toshiaki Endo ,  Yoichi Suzuki

IPC分类号： C10M169/02 ,  C10N20/02 ,  C10N40/02 ,  C10N50/10 ,  F16C33/66 ,  C10M115/08

CPC分类号： F16C33/6633 ,  C10M169/02 ,  C10M2203/10 ,  C10M2203/1006 ,  C10M2203/102 ,  C10M2203/1025 ,  C10M2203/1045 ,  C10M2203/1065 ,  C10M2203/1085 ,  C10M2205/00 ,  C10M2205/003 ,  C10M2205/02 ,  C10M2207/04 ,  C10M2207/0406 ,  C10M2207/2805 ,  C10M2207/281 ,  C10M2207/282 ,  C10M2207/2825 ,  C10M2207/283 ,  C10M2207/2835 ,  C10M2207/284 ,  C10M2207/285 ,  C10M2207/2855 ,  C10M2207/286 ,  C10M2207/34 ,  C10M2207/345 ,  C10M2215/006 ,  C10M2215/026 ,  C10M2215/0813 ,  C10M2215/1013 ,  C10M2215/102 ,  C10M2215/1026 ,  C10M2215/121 ,  C10M2215/2206 ,  C10M2215/2275

摘要： A grease composition comprising a base oil containing not less than 10% by weight of an ester oil based on the total base oil and having a kinematic viscosity of 50 to 200 mm.sup.2 /sec at 40.degree. C. and 15 to 35% by weight, based on the total grease composition, of a diurea compound represented by formula (I): ##STR1## wherein R.sub.2 represents an aromatic hydrocarbon group having 6 to 15 carbon atoms; and R.sub.1 and R.sub.3, which may be the same or different, each represent an aromatic hydrocarbon group having 6 to 12 carbon atoms or an aliphatic hydrocarbon group having 8 to 20 carbon atoms, the proportion of the aromatic hydrocarbon groups in the total of R.sub.1 and R.sub.3 being 50 to 100 mol %. When applied to outer race rotating bearings, the grease composition is excellent in flaking resistance, leak resistance, and low noise properties and prevents premature seizing under high temperature and high speed conditions.

摘要翻译： 一种润滑脂组合物，其包含基于总基础油含有不少于10重量％的酯油的基础油，并且在40℃下具有50至200mm 2 /秒的运动粘度和15至35重量％ （I）表示的二脲化合物：（I）其中R2表示碳原子数为6〜15的芳香族烃基， 和可以相同或不同的R 1和R 3各自表示具有6至12个碳原子的芳族烃基或具有8至20个碳原子的脂族烃基，芳族烃基在R 1和R 2的总数中的比例 R3为50〜100摩尔％。 当应用于外圈旋转轴承时，润滑脂组合物具有优异的耐剥落性，耐漏出性和低噪音性能，并防止在高温和高速条件下过早的卡死。

公开(公告)号：US5684484A

公开(公告)日：1997-11-04

申请号：US549861

申请日：1995-10-16

申请人： Yoichi Suzuki

发明人： Yoichi Suzuki

IPC分类号： A61B8/00 ,  G01S7/52 ,  H04J11/00

CPC分类号： G01S7/52028 ,  G01S7/52025

摘要： Phase-matched summation of multiple channels is made possible without the need of sampling clocks of multiple phases. The restriction on the reference wave frequency is alleviated even for a constant sampling rate. It comprises a probe 2 which receives a ultrasonic echo signal and delivers analog reception signals from its multiple channels, A/D converters 31-3x, delay circuits 41-4x of multiple channels which delay digital data for prescribed delay times, digital orthogonal detection circuits 61-6x which implement the digital orthogonal detection for the delayed digital data and extracts channel common-phase components and channel orthogonal components, a summing circuit 7I which sums the common-phase components of all channels to obtain a composite common-phase component I, and a summing circuit 7Q which sums the orthogonal components of all channels to obtain a composite orthogonal component Q. Digital delay is conducted while data is still at a high frequency and digital orthogonal detection is conducted afterward, and therefore sampling clocks of multiple phases are not needed and control is simplified. Orthogonal detection signals are obtained by the interpolation calculation, and therefore the restriction on the allowable reference wave frequency is alleviated even for a constant sampling rate.

摘要翻译： PCT No.PCT / JP95 / 00914 Sec。 371 1995年10月16日第 102（e）日期1995年10月16日PCT提交1995年5月11日PCT公布。 公开号WO95 / 31135 日期1995年11月23日可以实现多通道的相位匹配求和，而不需要多相采样时钟。 即使对于恒定的采样率，也可以减轻对参考波频率的限制。 它包括一个接收超声波回波信号并从其多个通道传送模拟接收信号的探头2，A / D转换器31-3x，多个通道延迟数字数据延迟规定延迟时间的延迟电路41-4x，数字正交检测电路 61-6x实现延迟数字数据的数字正交检测，并提取信道共相分量和信道正交分量;求和电路7I，其将所有通道的共相分量相加以获得复合公共相分量I， 以及求和电路7Q，其对所有通道的正交分量进行求和以获得复合正交分量Q.数据仍然在高频下进行数字延迟，并且之后进行数字正交检测，因此多相采样时钟不是 需要和控制简化。 通过内插计算获得正交检测信号，因此即使对于恒定的采样率，也可以减轻对允许参考波频率的限制。