公开(公告)号：US07173846B2

公开(公告)日：2007-02-06

申请号：US10366499

申请日：2003-02-13

申请人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

发明人： Wen-Chin Lin ,  Denny D. Tang ,  Yu Der Chih

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A new magnetic RAM cell device is achieved. The device comprisese, first, a MTJ cell comprising a free layer and a pinned layer separated by a dielectric layer. A reading switch is coupled between the free layer and a reading line. A writing switch is coupled between a first end of the pinned layer and a first writing line. A second end of the pinned layer is coupled to a second writing line. Architectures using MRAM cells are disclosed.

摘要翻译： 实现了新的磁性RAM单元装置。 该装置首先包括由电介质层分离的自由层和钉扎层的MTJ电池。 读取开关耦合在自由层和读取线之间。 写入开关耦合在固定层的第一端和第一写入线之间。 固定层的第二端耦合到第二写入线。 公开了使用MRAM单元的架构。

公开(公告)号：US08828745B2

公开(公告)日：2014-09-09

申请号：US13176790

申请日：2011-07-06

申请人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

发明人： Wei-Che Tsao ,  Chia-Lin Hsu ,  Jen-Chieh Lin ,  Teng-Chun Tsai ,  Hsin-Kuo Hsu ,  Ya-Hsueh Hsieh ,  Ren-Peng Huang ,  Chih-Hsien Chen ,  Wen-Chin Lin ,  Yung-Lun Hsieh

IPC分类号： H01L21/66 ,  H01L21/306 ,  H01L21/304 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an opening penetrating through the ILD layer and further extending into the substrate is formed. After an insulator layer and a metal barrier layer are formed on the stack structure and the sidewalls of the opening, a top metal layer is then formed on the stack structure to fulfill the opening. A first planarization process stopping on the barrier layer is conducted to remove a portion of the top metal layer. A second planarization process stopping on the ILD layer is subsequently conducted to remove a portion of the metal barrier layer, a portion of the insulator layer and a portion of the top metal layer, wherein the second planarization process has a polishing endpoint determined by a light interferometry or a motor current.

摘要翻译： 一种制造TSV的方法，其中该方法包括以下几个步骤：提供具有基板和ILD层（层间电介质层）的堆叠结构，其中穿透ILD层并进一步延伸到基板中的开口是 形成。 在堆叠结构和开口的侧壁上形成绝缘体层和金属阻挡层之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在阻挡层上的第一平面化处理以去除顶部金属层的一部分。 随后进行停止在ILD层上的第二平坦化处理以去除金属阻挡层的一部分，绝缘体层的一部分和顶部金属层的一部分，其中第二平坦化工艺具有由光线确定的抛光终点 干涉测量或电机电流。

公开(公告)号：US20090140285A1

公开(公告)日：2009-06-04

申请号：US12202439

申请日：2008-09-02

申请人： Shun-Tian Lin ,  Wen-Hsiang Chien ,  Wen-Chin Lin ,  Jyun-Wei Huang ,  Sin-Sian Wu

发明人： Shun-Tian Lin ,  Wen-Hsiang Chien ,  Wen-Chin Lin ,  Jyun-Wei Huang ,  Sin-Sian Wu

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H05K3/32 ,  F21K9/233 ,  F21V7/22 ,  F21V29/505 ,  F21V29/745 ,  F21V29/767 ,  F21Y2115/10 ,  H01L33/642 ,  H01L2224/48091 ,  H01L2224/48247 ,  H05K3/4015 ,  H05K2201/10106 ,  H05K2201/10242 ,  H05K2201/10378 ,  H05K2201/10424 ,  H05K2201/10962 ,  H01L2924/00014

摘要： A light-emitting device of a light-emitting diode (LED) and a manufacture method thereof are provided. The light-emitting device includes a post-like metal material, a printed circuit board, conductors, insulators, light-emitting diodes, wires, and an encapsulating material. The light-emitting device has through holes, in which conductors are disposed and surrounded with the insulators. One end of each conductor is connected to the printed circuit board to form a composite structure heat-dissipation substrate. The light-emitting diodes are disposed on the post-like metal material, connected to the conductors via the wires, and encapsulated by the encapsulating material. Furthermore, the light-emitting diodes, the wires, and the encapsulating material can be combined into a light-emitting unit. Moreover, red, blue, and green light-emitting diodes can be combined and the color of output light thereof can be adjusted by controlling the input signal.

摘要翻译： 提供了一种发光二极管（LED）的发光装置及其制造方法。 发光装置包括柱状金属材料，印刷电路板，导体，绝缘体，发光二极管，导线和封装材料。 发光装置具有通孔，其中导体被布置并被绝缘体包围。 每个导体的一端连接到印刷电路板上以形成复合结构的散热基片。 发光二极管设置在柱状金属材料上，经由导线连接到导体，并由封装材料封装。 此外，发光二极管，导线和封装材料可以组合成发光单元。 此外，可以组合红色，蓝色和绿色发光二极管，并且可以通过控制输入信号来调节其输出光的颜色。

公开(公告)号：US07270702B1

公开(公告)日：2007-09-18

申请号：US11452909

申请日：2006-06-15

申请人： Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

发明人： Wen-Chin Lin ,  Tzu-Kwei Sun ,  Jen-Fang Lin

IPC分类号： C09D11/00 ,  C09B29/036 ,  C09B67/22

CPC分类号： C09D11/32 ,  C09B29/363

摘要： The present invention discloses a yellow dye compound having a structure of the following formula (I): wherein M is H, Li, NH4 or Na. The dye compound of the present invention is particularly applied to yellow dye compound for paper-printing ink jet ink and can be made into yellow ink jet ink with greenish yellow, wide color gamut, and excellent solubility.

摘要翻译： 本发明公开了具有下式（I）结构的黄色染料化合物：其中M为H，Li，NH 4或Na。 本发明的染料化合物特别适用于纸张喷墨油墨的黄色染料化合物，并且可以制成具有黄绿色，宽色域和优异溶解性的黄色喷墨油墨。

公开(公告)号：US20070162736A1

公开(公告)日：2007-07-12

申请号：US11462409

申请日：2006-08-04

申请人： Tung-Peng Wu ,  Wei-Te Hsu ,  Wen-Chin Lin

发明人： Tung-Peng Wu ,  Wei-Te Hsu ,  Wen-Chin Lin

IPC分类号： G06F15/177 ,  G06F9/00

CPC分类号： G06F9/4401

摘要： An electronic device with accelerated boot process and a method for the same are proposed. When the host of the electronic device is in the off mode or standby mode, users can input a normal boot signal or a fast boot signal to activate the host. The boot signal is encoded by an encoder for producing a corresponding code. The host determines whether the input signal is the normal boot signal or the fast boot signal according to the received code. If the received code is the normal boot signal, the host performs a normal boot process. If the received code is the fast boot signal, an instant launcher directly launches application programs specified in the fast boot signal and blocks the start of unnecessary application programs. The boot process of the electronic device can be effectively accelerated, and users can define several boot modes themselves to meet different requirements.

摘要翻译： 提出了一种具有加速启动过程的电子设备及其方法。 当电子设备的主机处于关闭模式或待机模式时，用户可以输入正常的引导信号或快速引导信号来激活主机。 引导信号由用于产生相应代码的编码器编码。 主机根据接收到的代码确定输入信号是正常引导信号还是快速启动信号。 如果接收到的代码是正常引导信号，则主机执行正常引导过程。 如果接收的代码是快速启动信号，即时启动器将直接启动在快速引导信号中指定的应用程序，并阻止不必要的应用程序的启动。 电子设备的启动过程可以有效加速，用户可以自己定义几种启动模式，以满足不同的需求。

公开(公告)号：US20070096230A1

公开(公告)日：2007-05-03

申请号：US11610760

申请日：2006-12-14

申请人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

发明人： Yuan-Hung Liu ,  Chih-Ta Wu ,  Lan-Lin Chao ,  Yeur-Luen Tu ,  Wen-Chin Lin ,  Chia-Shiung Tsai

IPC分类号： H01L43/00 ,  H01L29/82

CPC分类号： H01L43/12 ,  H01L27/228

摘要： An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

摘要翻译： 改进的磁阻存储器件具有减小的磁存储元件与用于写入磁存储器元件的导电存储器线之间的距离。 通过根据包括在磁阻存储元件上形成掩模并在掩模层上形成绝缘层，然后使用平坦化处理去除绝缘层的部分的方法，通过形成改进的磁阻存储器件来简化缩短的距离。 然后可以在掩模层中形成导电通孔，例如使用镶嵌工艺。 然后可以在掩模层和导电通孔上形成导电存储器线。

公开(公告)号：US07203129B2

公开(公告)日：2007-04-10

申请号：US10780171

申请日：2004-02-16

申请人： Wen-Chin Lin ,  Danny D. Tang ,  Li-Shyue Lai

发明人： Wen-Chin Lin ,  Danny D. Tang ,  Li-Shyue Lai

IPC分类号： G11C8/00

CPC分类号： G11C11/16 ,  G11C2213/72 ,  G11C2213/74

摘要： In one example, an MRAM memory array includes a plurality of word lines, a plurality of bit lines crossing the word lines, and a plurality of first and second diodes, and magnetic tunnel junction memories. Each first diode includes a cathode, and an anode coupled to each bit line. Each second diode includes an anode, and a cathode coupled to each word line. The magnetic tunnel junction memories include a pinned layer, a free layer, and a non-magnetic layer. The non-magnetic layer is located between the pinned layer and the free layer. Each diode is positioned at crossing points of the bit lines and the word lines and connected between the first diode at the corresponding crossing bit line and the second diode at the corresponding crossing word line.

摘要翻译： 在一个示例中，MRAM存储器阵列包括多个字线，与字线交叉的多个位线，以及多个第一和第二二极管以及磁性隧道结存储器。 每个第一二极管包括阴极和耦合到每个位线的阳极。 每个第二二极管包括阳极和耦合到每个字线的阴极。 磁性隧道结存储器包括钉扎层，自由层和非磁性层。 非磁性层位于被钉扎层和自由层之间。 每个二极管位于位线和字线的交叉点处，并连接在相应交叉位线处的第一二极管和相应交叉字线处的第二二极管之间。

公开(公告)号：US5920667A

公开(公告)日：1999-07-06

申请号：US909759

申请日：1997-08-12

申请人： Kuo-Tung Tiao ,  Yen-Zen Lee ,  Wen-Chin Lin ,  Victor Hwang ,  Yeh Jin Ching

发明人： Kuo-Tung Tiao ,  Yen-Zen Lee ,  Wen-Chin Lin ,  Victor Hwang ,  Yeh Jin Ching

IPC分类号： G02B6/32 ,  G02B6/35 ,  G02B6/38

CPC分类号： G02B6/3504 ,  G02B6/32 ,  G02B6/3558

摘要： A switch device with a spiral mechanism for optical fiber is disclosed for improved reliablility. It includes: (a) a plurality of non-rotatable optical fibers, each having first end and second ends, the first end of each the non-rotatable optical fiber being provided with a parallel convergent lens, the second end of each the non-rotatable optical fiber being provided with a connector to connect an interface for receiving an optical signal; the plurality of the non-rotatable optical fibers being fixed on a circular fixture; (b) a rotatable optical fiber having first and second ends, wherein the first end of the rotatable optical fiber passes through a fixture hole, and connected with connector for receiving a optical signal, while the second end of the rotatable optical fiber being fixed to a motor; and (c) a spiral pipe made of a rigid material being sleeved on a portion of the rotatable optical fiber between the first and second ends The second end of the rotatable optical fiber is arranged such that it can be connected to the first end of one of the non-rotatable optical fibers without contact to form into a coupling channel within an angular scope of 360 degrees.

摘要翻译： 公开了一种具有用于光纤的螺旋机构的开关装置，用于改善可靠性。 它包括：（a）多个不可旋转的光纤，每个具有第一端和第二端，每个不可旋转的光纤的第一端设置有平行会聚透镜，每个非可旋转光纤的第二端， 可旋转光纤设置有连接器以连接用于接收光信号的接口; 多个不可旋转的光纤被固定在圆形夹具上; （b）具有第一端和第二端的可旋转光纤，其中可旋转光纤的第一端通过固定孔，并与用于接收光信号的连接器连接，而可旋转光纤的第二端被固定到 电机 和（c）由刚性材料制成的螺旋管，套在第一和第二端之间的可旋转光纤的一部分上。可旋转光纤的第二端被布置成使得其可连接到第一端的第一端 的不可旋转的光纤，而不会在360度的角度范围内形成耦合通道。

公开(公告)号：US20120142190A1

公开(公告)日：2012-06-07

申请号：US12962055

申请日：2010-12-07

申请人： Wei-Che TSAO ,  Wen-Chin Lin

发明人： Wei-Che TSAO ,  Wen-Chin Lin

IPC分类号： H01L21/306

CPC分类号： H01L21/76898 ,  H01L21/7684

摘要： A method for manufacturing TSVs comprises following steps: A stack structure having a substrate, an ILD layer and a dielectric stop layer is provided, in which an opening penetrating through the ILD layer and the dialectic stop layer and further extending into the substrate is formed. After an insulator layer and a metal barrier are formed on the stack structure, a top metal layer is formed on the stack structure to fulfill the opening. A first planarization process stopping on the metal barrier is conducted, wherein the first planarization process has a polishing rate for removing the metal barrier less than that for removing the top metal layer. A second planarization process stopping on the dielectric stop layer is conducted, wherein the second planarization process has a polishing rate for removing the insulator layer greater than that for removing the dielectric stop layer. The dielectric stop layer is than removed.

摘要翻译： 制造TSV的方法包括以下步骤：提供具有基板，ILD层和电介质停止层的堆叠结构，其中形成穿透ILD层和辩证阻止层并进一步延伸到基板中的开口。 在堆叠结构上形成绝缘体层和金属屏障之后，在堆叠结构上形成顶部金属层以实现开口。 进行停止在金属屏障上的第一平面化处理，其中第一平面化工艺具有除去金属屏障的抛光速率小于除去顶部金属层的抛光速率。 进行停止在电介质停止层上的第二平坦化工艺，其中第二平坦化工艺具有用于除去绝缘体层的抛光速率大于去除电介质停止层的抛光速率。 电介质停止层除去。

公开(公告)号：US20120048296A1

公开(公告)日：2012-03-01

申请号：US12868726

申请日：2010-08-26

申请人： Wen-Chin Lin ,  Kai-Chun Yang ,  Jen-Chieh Lin ,  Jeng-Yu Fang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Wei-Che Tsao

发明人： Wen-Chin Lin ,  Kai-Chun Yang ,  Jen-Chieh Lin ,  Jeng-Yu Fang ,  Chia-Lin Hsu ,  Teng-Chun Tsai ,  Wei-Che Tsao

IPC分类号： B08B7/00 ,  B08B3/00

CPC分类号： C11D11/0047 ,  C11D11/0064 ,  H01L21/02074

摘要： A cleaning method for a wafer is provided. First, a first cleaning process is performed wherein the first cleaning process includes providing a cleaning solution having a first concentration. Next, a second cleaning process is performed, wherein the second cleaning process includes providing the cleaning solution having a second concentration. The second concentration is substantially greater than the first concentration. Next, a post-cleaning process is performed to provide dilute water.

摘要翻译： 提供了一种用于晶片的清洁方法。 首先，进行第一清洗处理，其中第一清洗过程包括提供具有第一浓度的清洗溶液。 接下来，执行第二清洁处理，其中第二清洁处理包括提供具有第二浓度的清洁溶液。 第二浓度显着大于第一浓度。 接下来，进行后清洗处理以提供稀释水。