公开(公告)号：US20120119264A1

公开(公告)日：2012-05-17

申请号：US13319782

申请日：2010-05-11

Applicant: Yvon Cazaux ,  Benoít Giffard

Inventor： Yvon Cazaux ,  Benoít Giffard

IPC: H01L31/112

CPC classification number: H01L27/14818 ,  H01L27/14609 ,  H01L27/14843

Abstract: A basic device for an image sensor includes a photodiode consisting of a doped area having a first type of conductivity and formed at the surface of a semiconductor substrate having a second type of conductivity, adapted to be biased at a first reference voltage, wherein the photodiode is combined with a device for the transfer, multiplication and insulation of charges, the photodiode being a fully depleted one and including, at the surface of the doped area having a first type of conductivity, a strongly doped region having the second type of conductivity and adapted to be biased at a second reference voltage.

Abstract translation: 用于图像传感器的基本装置包括光电二极管，该光电二极管由具有第一类型导电性的掺杂区域形成，并形成在具有第二类型导电性的半导体衬底的表面上，该半导体衬底适于以第一参考电压偏置，其中光电二极管 与用于电荷的传输，乘法和绝缘的器件组合，所述光电二极管是完全耗尽的器件，并且在具有第一类型导电性的掺杂区域的表面处包括具有第二类型导电性的强掺杂区域，以及 适于被偏置在第二参考电压。

公开(公告)号：US20120112247A1

公开(公告)日：2012-05-10

申请号：US13319895

申请日：2010-05-11

Applicant: Yvon Cazaux ,  Benoît Giffard

Inventor： Yvon Cazaux ,  Benoît Giffard

IPC: H01L27/148

CPC classification number: H01L27/1485 ,  H01L27/14609 ,  H01L27/1464

Abstract: A basic device for an image sensor includes a photogeneration and charge-collecting region formed at the surface of a semiconductor substrate having a first type of conductivity, adapted to be biased at a reference voltage, the photogeneration region being associated with a device for the transfer, multiplication, and insulation of charges. The photogeneration region has an insulated gate mounted thereon, which is adapted to be alternately biased at a first voltage and at a second voltage, the insulated gate being made of a low-absorption material.

Abstract translation: 用于图像传感器的基本装置包括形成在具有第一类型导电性的半导体衬底的表面上的光生电荷和电荷收集区域，其适于偏置在参考电压，光生区域与用于转移的装置相关联 ，乘法和电荷绝缘。 光电产生区域具有安装在其上的绝缘栅极，其适于在第一电压和第二电压处交替地偏置，绝缘栅极由低吸收材料制成。

公开(公告)号：US08153947B2

公开(公告)日：2012-04-10

申请号：US12350677

申请日：2009-01-08

Applicant: Frédéric Barbier ,  Yvon Cazaux

Inventor： Frédéric Barbier ,  Yvon Cazaux

IPC: H01L27/00

CPC classification number: H04N5/3559 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/361 ,  H04N5/37452

Abstract: An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.

Abstract translation: 由像素阵列形成的图像传感器，每个像素包括耦合在第一参考电压和第一开关之间的光电二极管，所述第一开关可操作以将光电二极管连接到第一节点; 电容器，被布置成存储由所述光电二极管累积的电荷，所述电容器耦合在第二参考电压和第二节点之间; 耦合在所述第一和第二节点之间的第二开关，所述第二开关可操作以将所述电容器连接到所述第一节点; 并读取电路，用于读取第二节点处的电压。

公开(公告)号：US20100102206A1

公开(公告)日：2010-04-29

申请号：US12606139

申请日：2009-10-26

Applicant: Yvon Cazaux ,  Jérôme Vaillant

Inventor： Yvon Cazaux ,  Jérôme Vaillant

IPC: H01L31/101 ,  H01L27/146

CPC classification number: H01L27/14647 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14652

Abstract: A near infrared/color photodetector made in a monolithic form in a lightly-doped substrate of a first conductivity type covering a holder and comprising a face on the side opposed to the holder. The photodetector includes at least first and second photodiodes for the storage of electric charges photogenerated in the substrate, the second photodiode being adjacent to said face; and a first region extending at least between the second photodiode and the holder, preventing the passage of said charges between a first substrate portion being located between said region and the holder and a second substrate portion extending between said face and the first region, the first photodiode being adapted to store at least charges photogenerated in the first substrate portion and the second photodiode being adapted to store charges photogenerated in the second substrate portion.

Abstract translation: 一种在第一导电类型的轻掺杂衬底中以整体形式制成的近红外/彩色光电探测器，其覆盖保持器并且包括在与保持器相对的一侧上的面。 光电检测器至少包括用于存储在基板中产生的电荷的第一和第二光电二极管，第二光电二极管与所述面相邻; 以及至少在所述第二光电二极管和所述保持器之间延伸的第一区域，防止所述电荷在位于所述区域和所述保持器之间的第一衬底部分之间通过，以及在所述面和所述第一区域之间延伸的第二衬底部分， 光电二极管适于至少存储在第一衬底部分中产生的电荷，第二光电二极管适于存储在第二衬底部分中产生的电荷。

公开(公告)号：US5777672A

公开(公告)日：1998-07-07

申请号：US744197

申请日：1994-04-19

Applicant: Yvon Cazaux ,  Louis Brissot ,  Bruno Gili

Inventor： Yvon Cazaux ,  Louis Brissot ,  Bruno Gili

IPC: H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/372 ,  H04N5/335

CPC classification number: H04N3/1575 ,  H01L27/14831

Abstract: In a CCD type photosensitive device, the charges produced in two consecutive columns of pixels are transferred into different reading registers: the charges from the first column are loaded into the first register and the charges from the second column travel through the first register to be loaded into the second register. The two reading registers are controlled by independent potentials during the step for the loading of these registers. The device makes it possible to increase the efficiency of the transfer between the two reading registers, especially when the registers are of the type working in a two-phase mode.

Abstract translation: 在CCD型感光装置中，在两个连续的像素列中产生的电荷被转移到不同的读取寄存器中：来自第一列的电荷被加载到第一寄存器中，并且来自第二列的电荷通过第一寄存器运行以被加载 进入第二个登记册。 在加载这些寄存器的步骤期间，两个读取寄存器由独立电位控制。 该器件可以提高两个读取寄存器之间的传输效率，特别是当寄存器类型工作在两相模式时。

公开(公告)号：US5481301A

公开(公告)日：1996-01-02

申请号：US71926

申请日：1993-06-04

Applicant: Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

Inventor： Yvon Cazaux ,  Jean-Louis Coutures ,  Pierre Dautriche ,  Gilles Boucharlat

IPC: H01L27/148 ,  H04N5/335 ,  H04N5/372 ,  H04N5/376 ,  H04N5/378

CPC classification number: H04N5/335 ,  H01L27/14831 ,  H04N3/1525

Abstract: A method of detecting electromagnetic radiation imparted onto a matrix of photosensitive photomos networks in which pixels of each photomos network are simultaneously exposed to electromagnetic radiation source for a predetermined period of time. Thereafter, transfer signals are applied to each photomos pixel and accumulated charges corresponding to the strength of the radiation imparted onto the pixels are transferred in a columnwise fashion to the end of each column of the photomos networks. The charges are summed at the end of the columns and placed in a reading register. The charges in the reading register of each photomos network are summed and a signal is output corresponding to the strength of the electromagnetic radiation imparted onto the photomos network.

Abstract translation: 检测施加到光敏光网络的矩阵上的电磁辐射的方法，其中每个光网络的像素同时暴露于电磁辐射源一段预定时间段。 此后，传送信号被施加到每个光像像素，并且与施加到像素上的辐射的强度对应的累积电荷以列方式传送到光电网络的每列的末端。 这些费用在列的末尾相加并放置在读取寄存器中。 将每个光网络的读取寄存器中的电荷相加，并且相应于施加到光电网络上的电磁辐射的强度输出信号。

公开(公告)号：US5114237A

公开(公告)日：1992-05-19

申请号：US602671

申请日：1990-10-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H04N5/372

CPC classification number: H04N5/37206 ,  H04N3/1525

Abstract: A photosensitive sensor including multilinear arrays of n lines of cells which operate by charge integration and time delay by successive observations of the same image line by the n lines in the array, and by accumulation of the corresponding n observations in the cells of the sensor.To avoid the risk of saturation inherent in the fact that the electrical charges resulting from n observations accumulate in the same cell, the number of lines between which the charge integration and delays are preformed is programmed to be between 1 and n. This programming is performed as a function of the average illumination of the image analysed. To do so, the electrodes (ES1, ES2) of certain lines of cells are used, and potentials are applied to them; either the normal charge transfer potentials or a blocking potential which isolates the lines beyond this blocking electrode from a reading stage (RL, CL).

Abstract translation: 一种光敏传感器，其包括通过电荷积分和时间延迟操作的n行单元的多线阵列，通过阵列中的n行连续观察相同的图像线，以及通过在传感器的单元中积累相应的n个观察值。 为了避免由n次观测产生的电荷累积在同一个单元中的事实固有的饱和风险，将电荷积分和延迟之间的线数量编程为1和n之间。 根据所分析的图像的平均照度来执行该编程。 为此，使用某些细胞系的电极（ES1，ES2），并向它们施加电位; 正常的电荷转移电位或阻断电位将隔离电极与读取级（RL，CL）隔离。

公开(公告)号：US4862274A

公开(公告)日：1989-08-29

申请号：US197997

申请日：1988-05-24

Applicant: Yvon Cazaux

Inventor： Yvon Cazaux

IPC: H01L27/148 ,  H04N3/15 ,  H04N5/335

CPC classification number: H04N3/1568 ,  H01L27/14887

Abstract: In a photosensor with a frame transfer structure, each pixel constituting the matrix of photosensitive points is provided with a pulse-controlled MOS transistor. At the end of the frame transfer the TMOS is controlled through the electrodes, V.sub.DA and V.sub.GA, to eliminate residual charges which are present in the photosensitive zone and which are due to the transfer of empty stages corresponding to the dark zones of the image in the stages under the illuminated zones.

Abstract translation: 在具有帧传送结构的光传感器中，构成感光点矩阵的每个像素都设置有脉冲控制的MOS晶体管。 在帧传送结束时，TMOS通过电极VDA和VGA进行控制，以消除光敏区域中存在的残留电荷，这是由于与图像中的暗区相对应的空位的传送 照明区下的阶段。

公开(公告)号：US4819067A

公开(公告)日：1989-04-04

申请号：US48476

申请日：1987-05-06

Applicant: Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

Inventor： Jean L. Berger ,  Louis Brissot ,  Yvon Cazaux

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  H01L29/78

CPC classification number: H04N3/1568 ,  H01L27/14643 ,  H04N3/1525 ,  H04N3/1575

Abstract: An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.

Abstract translation: 改进的线转印感光装置，特别是以双驱动电荷操作的装置在至少一个半导体衬底上包括由M个N光敏点组成的光敏区域。 不同线路的感光点通过导电柱并联连接到线路存储器，该线路存储器至少将集成在感光区域的任何一行上的信号电荷的传输执行到由电荷耦合 移位寄存器的音量传输类型。 线存储器形成在具有相对于衬底的相反类型的杂质注入的半导体衬底区域上，以便产生体积电荷转移。 形成行存储器的区域的掺杂浓度低于或等于形成移位寄存器的区域的掺杂浓度。

公开(公告)号：US4645938A

公开(公告)日：1987-02-24

申请号：US562443

申请日：1983-12-16

Applicant: Louis Brissot ,  Jean-Luc Berger ,  Yvon Cazaux

Inventor： Louis Brissot ,  Jean-Luc Berger ,  Yvon Cazaux

IPC: H01L27/146 ,  H04N5/335 ,  H04N5/355 ,  H04N5/359 ,  H04N3/14

CPC classification number: H04N5/335 ,  H04N5/3559 ,  H04N5/3591

Abstract: The storage capacity of the photosensitive points is increased during the time interval starting after the evacuation of the parasitic charges from the conductive columns to the memory and finishing by the transfer of signal charges from a row of the columns to the memory. Thus, even the overilluminated photosensitive points do not overflow onto the columns.

Abstract translation: 在将寄生电荷从导电柱排出到存储器之后的时间间隔期间，通过从一列列到存储器传送信号电荷来完成光敏点的存储容量。 因此，即使过亮的感光点也不会溢出到色谱柱上。