Abstract:
A first doped region (20) is grown on a semiconductor substrate (1) as a superlattice region having alternate layers (21, 22) of a first and second semiconductor material followed by a waveguide region (30) having at least a superlattice region with alternate layers (31, 32) of the first and second semiconductor materials. A second doped region (40) is then grown as a superlattice including alternate layers (41, 42) of the first and second semiconductor materials on the waveguide region (30). The first and second doped regions (20 and 40) are grown so that the layers (21, 22, 41, 42) of the first and second semiconductor materials are sufficiently thin and are sufficiently highly doped as to become disordered during growth so that the first and second doped regions (20 and 40) are formed by an alloy of the first and second semiconductor materials having a lower refractive index and larger bandgap than the waveguide superlattice region (30). The device may be a semiconductor laser and the waveguide region (30) may be formed as two superlattice regions (30a, 30b) separated by an active region (50) of the laser.
Abstract:
Thin-film transformer, for example suitable for use in a thin-film magnetic head, comprising a magnetic yoke composed of two magnetically permeable thin layers 3 and 5 and a primary turn constituted by an electrically conducting thin layer 13 and a secondary turn constituted by an electrically conducting thin layer 15. A thin layer 21 of a superconducting material is provided between the layer 3 and the said turns, or the turns are closely fitted together and made of a superconducting material themselves.
Abstract:
An integrated semiconductor active isolator circuit which includes a negative feedback amplifier having an active semiconductor amplifier element. The control terminal of the semiconductor amplifying element defines the output of the isolator circuit and a principal conduction electrode of the semiconductor amplifying element defines an input of the isolator circuit.
Abstract:
An integrated circuit having logic circuits and a logic output buffer, which circuit includes the following sub-circuits: a memory circuit and a logic output circuit, in which no tri-state occurs at the output during a sequence of data signals at the input, wherein the drive of the circuit by means of control signals is not critical over time because the first data signal from the sequence switches off the tri-state mode, the tri-state mode again being introduced if a control signal is furnished, and in the absence of this control signal, the last data signal is retained.
Abstract:
A d.c. blocking amplifier circuit which has a fast start-up time and can be d.c. coupled to other similar circuits or cascaded with differential amplifiers comprising first and second differential amplifiers (40,42 and 44,46) and first and second balanced input lines (52,56), the first input line (52) being connected to the first differential amplifier which in operation amplifies an a.c. signal applied by way of the first input line (52), and the second input line (56) being connected to the second differential amplifier (44,46) which in operation amplifies an a.c. signal applied by way of the second input line (56). Outputs of the first and second differential amplifiers (40,42 and 44,46) are combined to produce an amplified signal which is independent of the d.c. conditions on each of the first and second balanced signal input lines. The circuit is suitable for use in digital paging receivers which operate a battery economizing regime.
Abstract:
In an image intensifier tube comprising a photosensitive layer an insulating wall portion is coated with a layer of chromium oxide which is deposited in the form of a chromium nitrate layer which is subsequently baked at a temperature of approximately 525.degree. C. A thin, suitably adhesive, uniform and transparent coating layer having a comparatively high resistance value is thus achieved.
Abstract:
A tubular connector body (10) has one end (11) for receiving an optical fibre cable (1) having a plastics outer sleeve (3) protecting an optical fibre (2) and carries at the other end (12) connection means (20) for coupling to another similar connection body. A ferrule (30) is mounted within the other end (12) of the connector body (10) to support an exposed end portion (2a) of the optical fibre (2) within an irradiation settable adhesive material (40) injected into the ferrule (30). A deformable gripping member (50) is inserted into the one end (11) of the connector body (10) to grip an end portion (3a) of the plastics outer sleeve (3) of the cable upon deformation of the gripping member (50) by application of a force to the one end (11) of the tubular connector body (10).
Abstract:
The invention relates to a method of manufacturing an optical line, in which at least one LWG (4, 11, 15, 19) extends in an envelope (3, 9, 13, 18) with excess length and is fixed with respect to the envelope by positioning elements (7, 8, 12, 20). The adjustment of an exactly defined excess length of one or several LWGs is made possible without the use of expensive manufacturing devices in that the positioning elements (7, 8, 12, 20) are provided on the LWGs (4, 11, 15, 19) prior to or during the insertion in the envelope (3, 9, 13, 18) and that the LWGs are pulled in by unreeling forces acting on the envelope (3, 9, 13, 18).
Abstract:
A method of recognizing a pattern in a field having a multi-valent amplitude, and a device for performing the method, uses association with a reference mask which is composed of logic high units and logic low units. The reference mask is sub-divided into two sub-masks, units having the same logic value belonging to the same sub-mask. The first and the second sub-mask contain relevant logic high units and logic low units, respectively. After the positioning of the sub-masks in the field, a relatively lowest and a relatively highest value of the amplitude are determined within the window of the first and the second sub-mask, respectively. When the difference formed by the relatively lowest value minus the relatively highest value is not negative, the desired pattern can in principle be recognized in the field. The device for performing the method includes at least one rank-value filter for determining the relatively highest value and the relatively lowest value. There is also determined the sign of the difference between the relatively lowest value and the relatively highest value.
Abstract:
A phase-locked loop includes an oscillator controlled by means of a switching network and a microprocessor which generates, in response to the output of a phase detector, two groups of output signals. A first group (Q1 . . . QN) is for adjusting the frequency of the oscillator in steps by selectively switching in frequency determining elements, and a second group (P1 . . . PM) for feeding a pulse duration modulator. The pulse duration modulator produces a control signal for a frequency determining minimum element of the switching network. The control signal has a duty cycle indicative of the frequency determination contribution by the minimum element.