Abstract:
The present invention provides a bandgap reference circuit. The bandgap reference circuit includes a first bipolar junction transistor, a first resistor, for generating a proportional to absolute temperature current, a second resistor, for generating a complementary to absolute temperature current, a first operational amplifier, coupled with the first bipolar junction transistor and the first resistor, a second operational amplifier, coupled with the first bipolar junction transistor and the second resistor, and a zero temperature correlated current generator, for summing the proportional to absolute temperature current and the complementary to absolute temperature current, to generate a zero temperature correlated current.
Abstract:
An apparatus and method for a voltage reference circuit and oscillator which operates for a low voltage power supply. The voltage reference circuit is used in an “always on” mode of operation, and have low power usage. The operational range is 1.1V to 3.6 V, and must allow for sub-bandgap voltage conditions as well as voltage tolerant for higher voltages. The circuit minimizes the number of current branches by avoiding complexity of operational amplifiers and comparator networks. The circuit avoids stacking of more than 2 devices to allow for low voltage operation. The voltage reference circuit between a power supply node and a ground node and configured for generating a reference voltage comprises of a current mirror function providing matching and sourcing network branches, a voltage generator network sourced from a current mirror providing a base-emitter voltage, a current drive function network electrically sourced from a current mirror function, and an output network function sourced from a current mirror providing a voltage reference output voltage. An oscillator circuit between a power supply node and a ground node and configured for generating an oscillating signal comprises of a current mirror function providing matching and sourcing network branches, a current drive function network electrically sourced from said current mirror function, an output network function sourced from said current mirror providing a capacitors, current sources, a capacitor providing charge storage, and output network function, and, a feedback loop network providing reset function.
Abstract:
A voltage reference circuit implemented in GaAs to provide an output voltage component proportional to absolute temperature is described herein. The various embodiments of the voltage reference circuit described here can be used to provide precision voltage to bias a RF device. The voltage reference circuit can be provided on the same die as the RF device. The various embodiments described herein can be implemented in a GaAs material system.
Abstract:
A reference voltage generator that does not require a start-up circuit or a feedback loop generates a proportional-to-absolute-temperature (PTAT) output voltage based on two complementary-to-absolute-temperature (CTAT) currents. The reference voltage generator provides a reference voltage that is a sum of the PTAT output voltage and a CTAT voltage.
Abstract:
The invention relates to an electronic device with a bandgap reference generator including a first path with series connection of a first bipolar transistor, a first resistor and a second resistor, and a second path with series connection of a second bipolar transistor and a third resistor. The first and second paths are supplied current via a common node through a fourth resistor controlled by an amplifier sensing voltage drops within the first and second paths. A curvature compensation stage compensates for a variation of base emitter voltage of the bipolar transistors by drawing a compensation current from the common resistor node.
Abstract:
A reference voltage generator includes a mirroring circuit generating a first sub-voltage and a second sub-voltage that are constant, a first voltage generator including a first switch generating a first voltage based on the first sub-voltage, and a second voltage generator including a second switch generating a second voltage that is lower than the first voltage based on the second sub-voltage, wherein the second switch has a threshold voltage that is lower than the first switch to keep a voltage difference between the first voltage and the second voltage as a first reference voltage.
Abstract:
A semiconductor device with improved temperature detection accuracy includes a coefficient calculation circuitry which calculates a plurality of N-th order coefficients, where N is an integer equal to or greater than one, of a correction function as an N-th order approximation of a characteristic function which relates temperature data measured by the temperature sensor and the actual temperature. The coefficient calculation circuitry uses N+1 pieces of the temperature data including a theoretical value at absolute zero in the characteristic function and N measured values of the temperature data measured by the temperature sensor unit at N points of temperature. A corrected temperatures are output using the correction function with the calculated coefficients and measured temperature values.
Abstract:
A bandgap reference circuit is provided and which includes an operating voltage, a current mirror, a first p-channel metal-oxide semiconductor (PMOS) transistor and an amplifier. The current mirror is coupled to the operating voltage. The first PMOS transistor is coupled to the operating voltage and the current mirror. The amplifier is coupled to the current mirror and the first PMOS transistor. When the bandgap reference circuit is activated, the operating voltage starts to supply voltage such that the first PMOS transistor is turned on first. When the operating voltage is higher than a preset voltage level, the first PMOS transistor is turned off, in order to complete an start-up process.
Abstract:
A voltage reference source (10) comprises a source block (21), a first resistor (16) having a first terminal coupled to a first terminal (22) of the source block (21), a reference output (15) for providing a reference voltage (S6), and a first and a second mirror transistor (11, 12) forming a first current mirror (13). The first mirror transistor (11) couples a second terminal (23) of the source block (21) to a supply voltage terminal (14) and the second mirror transistor (12) couples the reference output (15) to the supply voltage terminal (14). A series connection (17) of a second resistor (18) and a diode (19) is arranged between the reference output (15) and the first terminal of the first resistor (16). A mirror current (S3) flows through the second mirror transistor (12) and the series connection (17) to the first terminal of the first resistor (16).
Abstract:
A reference voltage generator is provided. In an example, the reference voltage generator includes a temperature-dependent device, a processing module configured to process a digital representations of first and second voltages derived from the temperature-dependent device and a reference voltage to determine a value, and a digital to analog converter (DAC) configured to generate a reference voltage based on the value. The first voltage is proportional to absolute temperature (PTAT) and the second voltage is complementary to absolute temperature (CTAT) and the reference voltage is substantially independent of absolute temperature in an operating temperature range of the reference voltage generator.