Method and apparatus for measuring electrical waveforms using atomic
force microscopy
    42.
    发明授权
    Method and apparatus for measuring electrical waveforms using atomic force microscopy 失效
    使用原子力显微镜测量电波形的方法和装置

    公开(公告)号:US5959458A

    公开(公告)日:1999-09-28

    申请号:US745885

    申请日:1996-11-08

    摘要: Sampling a waveform in an IC device to which a repeating test pattern is applied, includes the steps of: a) defining a portion of the test signal containing a feature of interest; b) applying a sampling signal to an AFM device adjacent a surface of the IC device at a predetermined point during the portion for a series of consecutive repetitions of the test signal pattern, the sampling signal having substantially shorter duration than the feature of interest; c) measuring deflection of a cantilever in the AFM device on application of the sampling signal; and d) determining the voltage at the predetermined point from the measured deflection of the cantilever. The steps can be applied at several points in the portion of interest and the measurements integrated and displayed.

    摘要翻译: 对应用了重复测试图案的IC设备中的波形采样包括以下步骤:a)定义包含感兴趣特征的测试信号的一部分; b)在所述测试信号模式的连续重复的部分期间,在预定点处将邻近IC设备的表面的AFM设备施加采样信号,所述采样信号的持续时间短于所关心的特征; c)在应用采样信号时测量AFM装置中的悬臂的偏转; 以及d)根据所测量的悬臂的偏转来确定预定点处的电压。 这些步骤可以在感兴趣部分的几个点应用,并且集成和显示测量结果。

    Ion-beam apparatus and method for analyzing and controlling integrated
circuits
    44.
    发明授权
    Ion-beam apparatus and method for analyzing and controlling integrated circuits 失效
    用于分析和控制集成电路的离子束装置和方法

    公开(公告)号:US5844416A

    公开(公告)日:1998-12-01

    申请号:US552184

    申请日:1995-11-02

    IPC分类号: G01R31/303 G01R31/302

    CPC分类号: G01R31/303

    摘要: An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

    摘要翻译: 一种用于分析和控制集成电路的离子束装置和方法。 离子束装置包括用于保持一个或多个集成电路(IC)的级; 用于产生聚焦离子束的源装置; 以及光束引导装置,用于引导聚焦离子束照射IC的预定部分足够的时间,以向IC的预定元件提供离子束产生的电输入信号。 该装置和方法具有对IC的故障分析和开发分析的应用,并且允许IC内的逻辑状态或器件参数的改变,控制或编程与IC的所施加的电刺激分开或组合以用于分析。 包括二次粒子检测器和电子泛水枪的本发明的优选实施例还允许通过二次离子或电子对IC进行成像,并允许至少部分去除或擦除离子束产生的电输入信号。

    Method and device of testing semiconductor integrated circuit chip
capable of preventing electron-hole pairs

    公开(公告)号:US5815002A

    公开(公告)日:1998-09-29

    申请号:US653834

    申请日:1996-05-28

    申请人: Kiyoshi Nikawa

    发明人: Kiyoshi Nikawa

    CPC分类号: G01R31/303

    摘要: A supersonic wave beam producing device projects a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a voltage is supplied to a semiconductor integrated circuit in the chip from a constant voltage source 1. A current detecting device 7 detects a change of a current in the circuit while the chip is supplied with the supersonic wave beam. In this event, the constant voltage source may be omitted. A supersonic wave beam producing device may project a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a current is supplied to a semiconductor integrated circuit. In this event, a voltage detecting device detects a change of a voltage between two ones of terminals of the circuit.

    Signal measuring apparatus and signal measuring method
    46.
    发明授权
    Signal measuring apparatus and signal measuring method 失效
    信号测量装置和信号测量方法

    公开(公告)号:US5550479A

    公开(公告)日:1996-08-27

    申请号:US498911

    申请日:1995-07-06

    CPC分类号: G01R31/303 Y10S977/85

    摘要: In a signal measuring apparatus a distance between a sample and a probe is adjusted, a voltage is applied through the sample and the probe and a signal is measured using a current flowing through the sample and the probe. That is, a current flowing through the sample and the probe is chopped by a laser beam at a prescribed frequency and is fetched into a sampling apparatus to generate a sample value of the current. The sample value is compared with a current setting value arbitrarily set in a comparator, and a reference voltage is generated according to a compared result in a control logic circuit and a D/A converter. The reference voltage is fed back to the sampling apparatus to converge the current flowing through the sample and the probe at the current setting value. Therefore, a signal of the sample is measured according to the reference voltage on condition that the current is converged at the current setting value.

    摘要翻译: 在信号测量装置中,调整样品和探针之间的距离,通过样品和探针施加电压,并使用流过样品和探针的电流测量信号。 也就是说,流过样品和探针的电流以规定的频率被激光束切断,并被取入到采样装置中以产生电流的样本值。 将采样值与比较器中任意设定的当前设定值进行比较,并根据控制逻辑电路和D / A转换器中的比较结果生成参考电压。 将参考电压反馈到采样装置,使流过样品和探针的电流以当前设定值收敛。 因此,在电流以当前设定值收敛的条件下,根据参考电压来测量样品的信号。

    Method of probing a net of an IC at an optimal probe-point
    47.
    发明授权
    Method of probing a net of an IC at an optimal probe-point 失效
    在最佳探针点探测IC网络的方法

    公开(公告)号:US5530372A

    公开(公告)日:1996-06-25

    申请号:US228027

    申请日:1994-04-15

    摘要: Probe-point placement methods are described. A layout description, a netlist description and a cross-reference description of an IC are retrieved from storage. The data structures associate with each net name a list of polygons. Polygons of a selected net are broken into segments of a specified step size. Each segment is evaluated in accordance with a set of prober rules. Values produced by the prober rules are weighted and combined to obtain a prober score for each segment. The prober score indicates suitability of the corresponding net location for probing. If the best prober score indicates an optimal segment exists for probing, the coordinates of that segment are stored and used to direct a probe to the corresponding location of the IC. If the best prober score indicates no optimal segment exists for probing, each segment of the net is evaluated in accordance with a set of probe-point cutter rules. Values produced by the probe-point cutter rules are weighted and combined to obtain a cutter score for each segment. The cutter score indicates suitability of the corresponding net location for cutting a probe-point hole. A segment having the best cutter score is considered optimal for placing a probe point. The methods can be used, e.g., with electron-beam, focused-ion-beam and laser-beam systems, and with mechanical probe systems.

    摘要翻译: 描述探针点放置方法。 从存储器检索布局描述,网表描述和IC的交叉引用描述。 数据结构与每个网络名称相关联的多边形列表。 所选网络的多边形被分解成指定步长的段。 每个段都按照一组探测器规则进行评估。 由探测器规则产生的值被加权并组合以获得每个段的探测器得分。 探测器分数表示相应的净位置适用于探测。 如果最好的探针分数表示存在用于探测的最佳分段,则该段的坐标被存储并用于将探针引导到IC的对应位置。 如果最佳探测器分数表示探测不存在最佳分段,则根据一组探针切割器规则评估网络的每个分段。 由探针切割器规则产生的值被加权并组合以获得每个切片的切割分数。 切割分数表示用于切割探针孔的相应净位置的适用性。 具有最佳切割分数的片段被认为是放置探针点的最佳选择。 该方法可以用于例如电子束,聚焦离子束和激光束系统以及机械探针系统。

    Analysis of integrated circuit operability using a focused ion beam
    48.
    发明授权
    Analysis of integrated circuit operability using a focused ion beam 失效
    使用聚焦离子束分析集成电路的可操作性

    公开(公告)号:US5376883A

    公开(公告)日:1994-12-27

    申请号:US984921

    申请日:1992-12-04

    申请人: Takashi Kaito

    发明人: Takashi Kaito

    CPC分类号: G01R31/303

    摘要: A method and apparatus for analyzing the operability of a semiconductor integrated circuit without removing a passivation film formed on a surface of the circuit and also for analyzing causes of failure of such circuit. The integrated circuit wiring receives an AC test signal and a predetermined portion of the surface of the circuit is simultaneously scanned and irradiated with a focused ion beam while the portion is irradiated with an electron beam to neutralize charges produced by the ion beam irradiation. Then, secondary electrons which are released from the surface of the circuit as a result of the focused ion beam irradiation are detected, and the detected signals are matched with a scanning signal to display an image of the semiconductor integrated circuit.

    摘要翻译: 一种用于分析半导体集成电路的可操作性而不去除形成在电路表面上的钝化膜的方法和装置,并且还用于分析这种电路的故障原因。 集成电路布线接收AC测试信号,同时用聚焦离子束扫描和照射电路表面的预定部分,同时用电子束照射该部分以中和由离子束照射产生的电荷。 然后,检测作为聚焦离子束照射的结果从电路表面释放的二次电子,并且检测到的信号与扫描信号相匹配,以显示半导体集成电路的图像。

    Integrated circuit device, system and method

    公开(公告)号:US12124384B2

    公开(公告)日:2024-10-22

    申请号:US17817686

    申请日:2022-08-05

    申请人: Arm Limited

    摘要: An integrated circuit device including processing circuitry, communications circuitry configured to provide a communication link with a communication apparatus external to the integrated circuit device, and a memory accessible by the processing circuitry and by the communications circuitry, the memory comprising a memory region to which the processing circuitry has write access and to which the communications circuitry has read access, in which the processing circuitry is configured to write information to the memory region indicative of one or more use conditions of the integrated circuit device, and in which the communications circuitry is configured to access the memory region and to provide the information indicative of the one or more use conditions of the integrated circuit device via the communication link.