摘要:
A method and an apparatus for probing signals from an integrated circuit through the back side of an integrated circuit die. In one embodiment, a passive diffusion is disposed in a semiconductor substrate of a flip-chip mounted integrated circuit die. The passive diffusion is coupled to a signal line through a contact. The signal line carries the integrated circuit signal of interest. In one embodiment, the disclosed passive diffusion is oversized to reduce attenuation of a signal acquired from the passive diffusion. In addition, the disclosed passive diffusion is laterally spaced from nearby diffusions in the semiconductor substrate of the integrated circuit to enable exposure of the passive diffusion with a reduced risk of damaging nearby structures in the integrated circuit die, such as for example other diffusions, during the exposing process. Moreover, the disclosed passive diffusion is laterally spaced from nearby diffusions to reduce crosstalk interference from the nearby diffusions.
摘要:
Sampling a waveform in an IC device to which a repeating test pattern is applied, includes the steps of: a) defining a portion of the test signal containing a feature of interest; b) applying a sampling signal to an AFM device adjacent a surface of the IC device at a predetermined point during the portion for a series of consecutive repetitions of the test signal pattern, the sampling signal having substantially shorter duration than the feature of interest; c) measuring deflection of a cantilever in the AFM device on application of the sampling signal; and d) determining the voltage at the predetermined point from the measured deflection of the cantilever. The steps can be applied at several points in the portion of interest and the measurements integrated and displayed.
摘要:
An integrated circuit includes a sensor which is arranged in the vicinity of a conductor in the circuit and is capable of measuring variations of the current through the conductor. This sensor, for example constructed as a coil, is capable of determining whether a connection which includes the conductor is in order. It can thus be tested notably whether the possibly multiple supply connection of the integrated circuit is appropriately connected to an external connection terminal.
摘要:
An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.
摘要:
A supersonic wave beam producing device projects a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a voltage is supplied to a semiconductor integrated circuit in the chip from a constant voltage source 1. A current detecting device 7 detects a change of a current in the circuit while the chip is supplied with the supersonic wave beam. In this event, the constant voltage source may be omitted. A supersonic wave beam producing device may project a supersonic wave beam 5 on a semiconductor integrated circuit chip 2 while a current is supplied to a semiconductor integrated circuit. In this event, a voltage detecting device detects a change of a voltage between two ones of terminals of the circuit.
摘要:
In a signal measuring apparatus a distance between a sample and a probe is adjusted, a voltage is applied through the sample and the probe and a signal is measured using a current flowing through the sample and the probe. That is, a current flowing through the sample and the probe is chopped by a laser beam at a prescribed frequency and is fetched into a sampling apparatus to generate a sample value of the current. The sample value is compared with a current setting value arbitrarily set in a comparator, and a reference voltage is generated according to a compared result in a control logic circuit and a D/A converter. The reference voltage is fed back to the sampling apparatus to converge the current flowing through the sample and the probe at the current setting value. Therefore, a signal of the sample is measured according to the reference voltage on condition that the current is converged at the current setting value.
摘要:
Probe-point placement methods are described. A layout description, a netlist description and a cross-reference description of an IC are retrieved from storage. The data structures associate with each net name a list of polygons. Polygons of a selected net are broken into segments of a specified step size. Each segment is evaluated in accordance with a set of prober rules. Values produced by the prober rules are weighted and combined to obtain a prober score for each segment. The prober score indicates suitability of the corresponding net location for probing. If the best prober score indicates an optimal segment exists for probing, the coordinates of that segment are stored and used to direct a probe to the corresponding location of the IC. If the best prober score indicates no optimal segment exists for probing, each segment of the net is evaluated in accordance with a set of probe-point cutter rules. Values produced by the probe-point cutter rules are weighted and combined to obtain a cutter score for each segment. The cutter score indicates suitability of the corresponding net location for cutting a probe-point hole. A segment having the best cutter score is considered optimal for placing a probe point. The methods can be used, e.g., with electron-beam, focused-ion-beam and laser-beam systems, and with mechanical probe systems.
摘要:
A method and apparatus for analyzing the operability of a semiconductor integrated circuit without removing a passivation film formed on a surface of the circuit and also for analyzing causes of failure of such circuit. The integrated circuit wiring receives an AC test signal and a predetermined portion of the surface of the circuit is simultaneously scanned and irradiated with a focused ion beam while the portion is irradiated with an electron beam to neutralize charges produced by the ion beam irradiation. Then, secondary electrons which are released from the surface of the circuit as a result of the focused ion beam irradiation are detected, and the detected signals are matched with a scanning signal to display an image of the semiconductor integrated circuit.
摘要:
An integrated circuit device including processing circuitry, communications circuitry configured to provide a communication link with a communication apparatus external to the integrated circuit device, and a memory accessible by the processing circuitry and by the communications circuitry, the memory comprising a memory region to which the processing circuitry has write access and to which the communications circuitry has read access, in which the processing circuitry is configured to write information to the memory region indicative of one or more use conditions of the integrated circuit device, and in which the communications circuitry is configured to access the memory region and to provide the information indicative of the one or more use conditions of the integrated circuit device via the communication link.
摘要:
Devices for testing a DUT having a circuit coupled to an antenna are disclose. The device can include a DUT location for receiving a DUT, and an adapter or probe is used to wirelessly “over-the-air” (OTA) electronically test a DUT with an embedded antenna or antenna array with the measurement probe 140 located in close proximity to the DUT. The probe can be located very close to the DUT (e.g., in the near-field region). Although the probe is located in close proximity to the DUT antenna or antenna array elements it does not significantly disturb or interfere with probe during testing.